- 您现在的位置：买卖IC网 > PDF目录4137 > IDT7140SA35JI8 (IDT, Integrated Device Technology Inc)IC SRAM 8KBIT 35NS 52PLCC PDF资料下载
参数资料
| 型号： | IDT7140SA35JI8 |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 2/21页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 8KBIT 35NS 52PLCC |
| 标准包装： | 400 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM - 双端口，异步 |
| 存储容量： | 8K (1K x 8) |
| 速度： | 35ns |
| 接口： | 并联 |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 52-LCC（J 形引线） |
| 供应商设备封装： | 52-PLCC（19x19） |
| 包装： | 带卷 (TR) |
| 其它名称： | 7140SA35JI8 |
IDT7130SA/LA and IDT7140SA/LA
High-Speed 1K x 8 Dual-Port Static SRAM
Description
The IDT7130/IDT7140 are high-speed 1K x 8 Dual-Port Static
RAMs. The IDT7130 is designed to be used as a stand-alone 8-bit
Dual-Port RAM or as a "MASTER" Dual-Port RAM together with the
IDT7140 "SLAVE" Dual-Port in 16-bit-or-more word width systems.
Using the IDT MASTER/SLAVE Dual-Port RAM approach in 16-or-
more-bit memory system applications results in full-speed, error-
free operation without the need for additional discrete logic.
Both devices provide two independent ports with separate con-
trol, address, and I/O pins that permit independent asynchronous
access for reads or writes to any location in memory. An automatic
power down feature, controlled by CE , permits the on chip circuitry
Pin Configurations (1,2,3)
01/08/02
INDEX
Military, Industrial and Commercial Temperature Ranges
of each port to enter a very low standby power mode.
Fabricated using CMOS high-performance technology, these de-
vices typically operate on only 550mW of power. Low-power (LA)
versions offer battery backup data retention capability, with each Dual-
Port typically consuming 200μW from a 2V battery.
The IDT7130/IDT7140 devices are packaged in 48-pin sidebraze
or plastic DIPs, LCCs, flatpacks, 52-pin PLCC, and 64-pin TQFP
and STQFP. Military grade products are manufactured in compli-
ance with the latest revision of MIL-PRF-38535 QML, making it
ideally suited to military temperature applications demanding the
highest level of performance and reliability.
A 1L
7
6 5 4
3 2
1
48 47 46 45 44 43
42
A 0R
A 2L
A 3L
8
9
41
40
A 1R
A 2R
A 4L
A 5L
A 6L
A 7L
A 8L
10
11
12
13
14
IDT7130/40L48 or F
L48-1 (4)
&
F48-1 (4)
48-Pin LCC/ Flatpack
Top View (5)
39
38
37
36
35
A 3R
A 4R
A 5R
A 6R
A 7R
A 9L
I/O 0L
I/O 1L
I/O 2L
15
16
17
18
19 20 21
34
33
32
31
22 23 24 25 26 27 28 29 30
A 8R
A 9R
I/O 7R
I/O 6R
2689 drw 03
,
NOTES:
1. All V CC pins must be connected to power supply.
2. All GND pins must be connected to ground supply.
3. L48-1 package body is approximately .57 in x .57 in x .68 in.
F48-1 package body is approximately .75 in x .75 in x .11 in.
4. This package code is used to reference the package diagram.
5. This text does not indicate orientation of the actual part-marking.
2
相关PDF资料 |
PDF描述 |
|---|---|
| IDT7140LA35J8 | IC SRAM 8KBIT 35NS 52PLCC |
| AMM36DRMN | CONN EDGECARD 72POS .156 WW |
| AMM36DRMH | CONN EDGECARD 72POS .156 WW |
| IDT7130LA35J8 | IC SRAM 8KBIT 35NS 52PLCC |
| AMM44DSXI | CONN EDGECARD 88POS DIP .156 SLD |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IDT7140SA35L48B | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 8KBIT 35NS 48LCC |
| IDT7140SA35P | 功能描述:IC SRAM 8KBIT 35NS 48DIP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:2,000 系列:MoBL® 格式 - 存储器:RAM 存储器类型:SRAM - 异步 存储容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并联 电源电压:2.2 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-VFBGA 供应商设备封装:48-VFBGA（6x8） 包装:带卷 (TR) |
| IDT7140SA35PF | 功能描述:IC SRAM 8KBIT 35NS 64TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:2,000 系列:MoBL® 格式 - 存储器:RAM 存储器类型:SRAM - 异步 存储容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并联 电源电压:2.2 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-VFBGA 供应商设备封装:48-VFBGA（6x8） 包装:带卷 (TR) |
| IDT7140SA35PF8 | 功能描述:IC SRAM 8KBIT 35NS 64TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:2,000 系列:MoBL® 格式 - 存储器:RAM 存储器类型:SRAM - 异步 存储容量:16M（2M x 8，1M x 16） 速度:45ns 接口:并联 电源电压:2.2 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-VFBGA 供应商设备封装:48-VFBGA（6x8） 包装:带卷 (TR) |
| IDT7140SA45P | 制造商:Integrated Device Technology Inc 功能描述:1K X 8 MULTI-PORT SRAM, 45 ns, PDIP48 |
发布紧急采购，3分钟左右您将得到回复。