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参数资料
| 型号： | IDT7143LA45PF |
| 厂商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分类： | DRAM |
| 英文描述： | HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS |
| 中文描述： | 2K X 16 DUAL-PORT SRAM, 45 ns, PQFP100 |
| 封装： | TQFP-100 |
| 文件页数： | 14/16页 |
| 文件大小： | 140K |
| 代理商： | IDT7143LA45PF |
6.42
IDT7133SA/LA, IDT7143SA/LA
High-Speed 2K x 16 Dual-Port RAM Military, Industrial and Commercial Temperature Ranges
The IDT7133/43 provides two ports with separate control, address
and I/O pins that permt independent access for reads or writes to any
location in memory. The IDT7133/43 has an automatic power down
feature controlled by
CE
. The
CE
controls on-chip power down circuitry
that permts the respective port to go into a standby mode when not
selected (
CE
HIGH). When a port is enabled, access to the entire
memory array is permtted. Non-contention READ/WRITE conditions
are illustrated in Truth Table 1.
29
Busy Logic provides a hardware indication that both ports of the
RAMhave accessed the same location at the same time. It also allows
one of the two accesses to proceed and signals the other side that the
RAMis
“
busy
”
. The
BUSY
pin can then be used to stall the access until
the operation on the other side is completed. If a write operation has
been attempted fromthe side that receives a
BUSY
indication, the
write signal is gated internally to prevent the write fromproceeding.
The use of
BUSY
logic is not required or desirable for all applica-
tions. In some cases it may be useful to logically OR the
BUSY
outputs
together and use any
BUSY
indication as an interrupt source to flag the
event of an illegal or illogical operation. If the write inhibit function of
BUSY logic is not desirable, the
BUSY
logic can be disabled by using
the IDT7143 (SLAVE). In the IDT7143, the
BUSY
pin operates solely
as a write inhibit input pin. Normal operation can be programmed by
tying the
BUSY
pins HIGH. If desired, unintended write operations can
be prevented to a port by tying the
BUSY
pin for that port LOW. The
BUSY
outputs on the IDT 7133 RAMare open drain and require pull-
up resistors.
8-* 0*29
/=15%2
When expanding an IDT7133/43 RAMarray in width while using
BUSY
logic, one master part is used to decide which side of the RAM
array will receive a
BUSY
indication, and to output that indication. Any
number of slaves to be addressed in the same address range as the
master, use the
BUSY
signal as a write inhibit signal. Thus on the
IDT7133 RAMthe
BUSY
pin is an output and on the IDT7143 RAM the
BUSY
pin is an input (see Figure 3).
Expanding the data bus width to 32 bits or more in a Dual-Port RAM
systemimplies that several chips will be active at the same time. If each
chip includes a hardware arbitrator, and the addresses for each chip
arrive at the same time, it is possible that one will activate its
BUSY
L
while another activates its
BUSY
R
signal. Both sides are now
BUSY
and the CPUs will await indefinitely for their port to become free.
To avoid the
“
Busy Lock-Out
”
problem IDT has developed a
MASTER/SLAVE approach where only one hardware arbitrator, in the
MASTER, is used. The SLAVE has
BUSY
inputs which allow an
interface to the MASTER with no external components and with a
speed advantage over other systems.
When expanding Dual-Port RAMs in width, the writing of the SLAVE
RAMs must be delayed until after the
BUSY
input has settled.
Otherwise, the SLAVE chip may begin a write cycle during a contention
situation. Conversely, the write pulse must extend a hold time past
BUSY
to ensure that a write cycle takes place after the contention is
resolved. This timng is inherent in all Dual-Port memory systems where
more than one chip is active at the same time.
The write pulse to the SLAVE should be delayed by the maximum
arbitration time of the MASTER. If, then, a contention occurs, the write
to the SLAVE will be inhibited due to
BUSY
fromthe MASTER.
Figure 4
.
Busy and chip enable routing for both width and depth expansion
with the IDT7133 (MASTER) and the IDT7143 (SLAVE).
V
CC
R/
W
BUSY
R/
W
BUSY
IDT7133
MASTER
V
CC
R/
W
BUSY
R/
W
BUSY
R/
W
BUSY
R/
W
BUSY
LEFT
RIGHT
2746drw 15
IDT7143
SLAVE
270
270
相关PDF资料 |
PDF描述 |
|---|---|
| IDT7133SA45PFB | HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS |
| IDT7143SA45PFB | HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS |
| IDT7133LA45PFB | HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS |
| IDT7143LA45PFB | HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS |
| IDT7133LA45PFI | HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IDT7143LA55G | 功能描述:IC SRAM 32KBIT 55NS 68PGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:3,000 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:8K (1K x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:带卷 (TR) |
| IDT7143LA55GB | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 32KBIT 55NS 68PGA |
| IDT7143LA55J | 功能描述:IC SRAM 32KBIT 55NS 68PLCC RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:72 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 存储容量:9M（256K x 36） 速度:75ns 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:-40°C ~ 85°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP（14x14） 包装:托盘 其它名称:71V67703S75PFGI |
| IDT7143LA55J8 | 功能描述:IC SRAM 32KBIT 55NS 68PLCC RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:72 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 存储容量:9M（256K x 36） 速度:75ns 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:-40°C ~ 85°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP（14x14） 包装:托盘 其它名称:71V67703S75PFGI |
| IDT7143LA55PF | 功能描述:IC SRAM 32KBIT 55NS 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:72 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 存储容量:9M（256K x 36） 速度:75ns 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:-40°C ~ 85°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP（14x14） 包装:托盘 其它名称:71V67703S75PFGI |
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