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参数资料
| 型号： | IDT7143SA35FI |
| 厂商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分类： | DRAM |
| 英文描述： | HIGH-SPEED 2K x 16 CMOS DUAL-PORT STATIC RAMS |
| 中文描述： | 2K X 16 DUAL-PORT SRAM, 35 ns, CQFP68 |
| 封装： | FP-68 |
| 文件页数： | 4/16页 |
| 文件大小： | 140K |
| 代理商： | IDT7143SA35FI |
6.42
IDT7133SA/LA, IDT7143SA/LA
High-Speed 2K x 16 Dual-Port RAM Military, Industrial and Commercial Temperature Ranges
$
%
&'()&#*+!
,--.
-
Symbol
/0.
$-123
!
%4/0,
!
*.5*.
$-123,
*3
&(#367!
NOTE:
1.
At Vcc < 2.0V, input leakages are undefined.
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUMRATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in
the operational sections of this specification is not implied. Exposure to absolute
maximumrating conditions for extended periods may affect reliability.
2. V
TERM
must not exceed Vcc + 10% for more than 25% of the cycle time or 10ns
maximum and is limted to < 20mA for the period of V
TERM
> Vcc + 10%.
NOTES:
1. This parameter is determned by device characterization but is not production
tested.
2. 3dV references the interpolated capacitance when the input and output switch from
0V to 3V or from3V to 0V.
NOTES:
1. This is the parameter T
A
. This is the "instant on" case temperature.
NOTES:
1.
2.
V
IL
(mn.) = -1.5V for pulse width less than 10ns.
V
TERM
must not exceed Vcc + 10%.
Symbol
Rating
Commercial
& Industrial
Mlitary
Unit
V
TERM
(2)
Termnal Voltage
wth Respect
to GND
-0.5 to +7.0
-0.5 to +7.0
V
T
BIAS
Temperature
Under Bias
-55 to +125
-65 to +135
o
C
T
STG
Storage
Temperature
-65 to +150
-65 to +150
o
C
P
T
(3)
Power
Dissipation
2.0
2.0
W
I
OUT
DC Output
Current
50
50
mA
2746 tbl 02
Grade
Ambient
Temperature
GND
Vcc
Mlitary
-55
O
C to +125
O
C
0V
5.0V
+
10%
Commercial
0
O
C to +70
O
C
0V
5.0V
+
10%
Industrial
-40
O
C to +85
O
C
0V
5.0V
+
10%
2746 tbl 04
Symbol
Parameter
(1)
Conditions
(2)
Max.
Unit
C
IN
Input Capacitance
V
IN
= 3dV
11
pF
C
OUT
Output Capacitance
V
OUT
= 3dV
11
pF
2746 tb 03
Parameter
Mn.
Typ.
Max.
Unit
V
CC
Supply Voltage
4.5
5.0
5.5
V
GND
Ground
0
0
0
V
V
IH
Input High Voltage
2.2
____
6.0
(2)
V
V
IL
Input LowVoltage
-0.5
(1)
____
0.8
V
2746 tbl 05
Symbol
Parameter
Test Conditions
7133SA
7143SA
7133LA
7143LA
Unit
Mn.
Max.
Mn.
Max.
|
LI
|
Input Leakage Current
(1)
V
CC
= 5.5V, V
IN
= 0V to V
CC
___
10
___
5
μA
|
LO
|
Output Leakage Current
CE
= V
IH
, V
OUT
= 0V to V
CC
___
10
___
5
μA
V
OL
Output LowVoltage (I/O
0
-I/O
15
)
I
OL
= 4mA
___
0.4
___
0.4
V
V
OL
Open Drain Output Low Voltage
(
BUSY
)
I
OL
= 16mA
___
0.5
___
0.5
V
V
OH
Output High Voltage
I
OH
= -4mA
2.4
___
2.4
___
V
2746 tbl 06
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| IDT7143SA35GB | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 32KBIT 35NS 68PGA |
| IDT7143SA35J | 功能描述:IC SRAM 32KBIT 35NS 68PLCC RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:72 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 存储容量:9M（256K x 36） 速度:75ns 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:-40°C ~ 85°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP（14x14） 包装:托盘 其它名称:71V67703S75PFGI |
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| IDT7143SA35PF | 功能描述:IC SRAM 32KBIT 35NS 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:72 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 存储容量:9M（256K x 36） 速度:75ns 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:-40°C ~ 85°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP（14x14） 包装:托盘 其它名称:71V67703S75PFGI |
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