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| 型号： | IDT7164S35YG |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 2/10页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 64KBIT 35NS 28SOJ |
| 产品变化通告： | Product Discontinuation 29/Apr/2010 |
| 标准包装： | 27 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM - 异步 |
| 存储容量： | 64K (8K x 8) |
| 速度： | 35ns |
| 接口： | 并联 |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 28-BSOJ |
| 供应商设备封装： | 28-SOJ |
| 包装： | 管件 |
| 其它名称： | 7164S35YG |
IDT7164S/L
CMOS Static RAM 64K (8K x 8-Bit)
Pin Configurations
Military, Commercial, and Industrial Temperature Ranges
Absolute Maximum Ratings (1)
Symbol
Rating
Com'l.
Mil.
Unit
V TERM
NC
A 12
A 7
1
2
3
28
27
26
V CC
WE
CS 2
(2)
Terminal Voltage
with Respect
to GND
-0.5 to +7.0
-0.5 to +7.0
V
A 6
A 5
A 4
A 3
A 2
4
5
6
7
8
D28-1
D28-3
P28-2
SO28-5
25
24
23
22
21
A 8
A 9
A 11
OE
A 10
T A
T BIAS
Operating
Temperature
Temperature
Under Bias
0 to +70
-55 to +125
-55 to +125
-65 to +135
o
o
C
C
C
A 1
A 0
I/O 0
I/O 1
I/O 2
GND
9
10
11
12
13
14
20
19
18
17
16
15
CS 1
I/O 7
I/O 6
I/O 5
I/O 4
I/O 3
T STG
P T
I OUT
NOTES:
Storage Temperature
Power Dissipation
DC Output Current
-55 to +125
1.0
50
-65 to +150
1.0
50
o
W
mA
2967 tbl 02
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
DIP/SOJ
Top View
Pin Descriptions
2967 drw 02a
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
2. V TERM must not exceed V CC + 0.5V.
Truth Table (1,2,3)
Name
A 0 - A 12
I/O 0 - I/O 7
CS 1
CS 2
WE
OE
GND
Description
Address
Data Input/Output
Chip Select
Chip Select
Write Enable
Output Enable
Ground
WE
X
X
X
X
H
H
L
CS 1
H
X
V HC
X
L
L
L
CS 2
X
L
V HC or
V LC
V LC
H
H
H
OE
X
X
X
X
H
L
X
I/O
High-Z
High-Z
High-Z
High-Z
High-Z
DATA OUT
DATA IN
Function
Deselected - Standby (I SB )
Deselected - Standby (I SB )
Deselected - Standby (I SB1 )
Deselected - Standby (I SB1 )
Output Disabled
Read Data
Write Data
V CC
Power
2967 tbl 01
NOTES:
1. CS 2 will power-down CS 1 , but CS 1 will not power-down CS 2 .
2967 tbl 03
2. H = V IH , L = V IL , X = don't care.
3. V LC = 0.2V, V HC = V CC - 0.2V
V IH Input HIGH Voltage 2.2 V CC + 0.5
V IL Input LOW Voltage -0.5 (1) 0.8
Military -55 C to +125 C 0V 5V ± 10%
Industrial -40 C to +85 C 0V 5V ± 10%
Recommended DC Operating
Conditions
Symbol Parameter Min. Typ. Max.
V CC Supply Voltage 4.5 5.0 5.5
GND Ground 0 0 0
____
____
NOTE:
1. V IL (min.) = –1.5V for pulse width less than 10ns, once per cycle.
Unit
V
V
V
V
2967 tbl 05
2
Recommended Operating
Temperature and Supply Voltage
Grade Temperature GND Vcc
O O
O O
Commercial 0 O C to +70 O C 0V 5V ± 10%
2967 tbl 04
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| IDT7164S35YG8 | 功能描述:IC SRAM 64KBIT 35NS 28SOJ RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 产品变化通告:Product Discontinuation 26/Apr/2010 标准包装:136 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步，DDR II 存储容量:18M（1M x 18） 速度:200MHz 接口:并联 电源电压:1.7 V ~ 1.9 V 工作温度:0°C ~ 70°C 封装/外壳:165-TBGA 供应商设备封装:165-CABGA（13x15） 包装:托盘 其它名称:71P71804S200BQ |
| IDT7164S35YGI | 功能描述:IC SRAM 64KBIT 35NS 28SOJ RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 产品变化通告:Product Discontinuation 26/Apr/2010 标准包装:136 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步，DDR II 存储容量:18M（1M x 18） 速度:200MHz 接口:并联 电源电压:1.7 V ~ 1.9 V 工作温度:0°C ~ 70°C 封装/外壳:165-TBGA 供应商设备封装:165-CABGA（13x15） 包装:托盘 其它名称:71P71804S200BQ |
| IDT7164S35YGI8 | 功能描述:IC SRAM 64KBIT 35NS 28SOJ RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 产品变化通告:Product Discontinuation 26/Apr/2010 标准包装:136 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步，DDR II 存储容量:18M（1M x 18） 速度:200MHz 接口:并联 电源电压:1.7 V ~ 1.9 V 工作温度:0°C ~ 70°C 封装/外壳:165-TBGA 供应商设备封装:165-CABGA（13x15） 包装:托盘 其它名称:71P71804S200BQ |
| IDT7164S45DB | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 64KBIT 45NS 28CDIP |
| IDT7164S45TDB | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 64KBIT 45NS 28CDIP |
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