参数资料
型号: IDT71T75602S200BGI
厂商: IDT, Integrated Device Technology Inc
文件页数: 23/23页
文件大小: 0K
描述: IC SRAM 18MBIT 200MHZ 119BGA
产品变化通告: Product Discontinuation 31/Jan/2010
标准包装: 84
格式 - 存储器: RAM
存储器类型: SRAM - 同步 ZBT
存储容量: 18M(512K x 36)
速度: 200MHz
接口: 并联
电源电压: 2.375 V ~ 2.625 V
工作温度: -40°C ~ 85°C
封装/外壳: 119-BGA
供应商设备封装: 119-PBGA(14x22)
包装: 托盘
其它名称: 71T75602S200BGI
IDT71T75602, IDT71T75802, 512K x 36, 1M x 18, 2.5V Synchronous ZBT? SRAMs with
2.5V I/O, Burst Counter, and Pipelined Outputs Commercial and Industrial Temperature Ranges
Datasheet Document History
Rev
Date
Pages
Description
0
1
2
3
4
5
6
7
8
9
10
04/20/00
05/25/00
08/23/01
10/16/01
10/29/01
12/21/01
06/07/02
11/19/02
05/23/03
04/01/04
10/01/08
04/04/12
Created New Datasheet
Pg.1,14,15,25 Added 166MHz speed grade offering
Pg. 1,2,14 Corrected error in ZZ Sleep Mode
Pg. 23 AddBQ165 Package Diagram Outline
Pg. 24 Corrected 119BGA Package Diagram Outline.
Pg. 25 Corrected topmark on ordering information
Pg. 1,2,24 Removed reference of BQ165 Package
Pg. 7 Removed page of the 165 BGA pin configuration
Pg. 23 Removed page of the 165 BGA package diagram outline
Pg. 6 Corrected 3.3V to 2.5V in Note 2
Pg. 13 Improved DC Electrical characteristics-parameters improved: Icc, ISB2, ISB3, IZZ.
Pg. 4-6 Added clarification to JTAG pins, allow for NC. Added 36M address pin locations.
Pg. 14 Revised 166MHz t CDC (min), t CLZ (min) and t CHZ (min) to 1.0ns
Pg. 1-3,6,13,20,21 Added complete JTAG functionality.
Pg. 2,13 Added notes for ZZ pin internal pulldown and ZZ leakage current.
Pg. 13,14,24 Added 200MHz and 225MHz to DC and AC Electrical Characteristics. Updated supply current for
Idd, ISB1, ISB3 and Izz.
Pg.1-24 Changed datasheet from Advanced Information to final release.
Pg.13 Updated DC Electrical characteristics temperature and voltage range table.
Pg.4,5,13,14,24 Added I-temp to the datasheet.
Pg.5 Updated 165 BGA Capacitance table.
Pg. 1 Updated logo with new design.
Pg. 4,5 Clarified ambient and case operating temperatures.
Pg. 6 Updated pin I/O number order for the 119 BGA.
Pg. 23 Updated 119BGA Package Diagram Drawing.
Pg. 1,13,14,24 Deleted 225MHz part, added 200MHz Industrial grade and added green packages. Updated the
ordering information by removing the “IDT” notation.
Pg. 2,22 Updated text on Page 2 last paragraph. Added Note to ordering information and updated to include
tube or tray and tape & reel.
.
CORPORATE HEADQUARTERS
6024 Silver Creek Valley Rd
San Jose, CA 95138
for SALES:
800-345-7015 or 408-284-8200
fax: 408-284-2775
www.idt.com
for Tech Support:
sramhelp@idt.com
800-345-7015 or
408/284-4555
The IDT logo is a registered trademark of Integrated Device Technology, Inc. All brands or products are the trademarks or registered trademarks of their respective owners.
ZBT ? and Zero Bus Turnaround are trademarks of Integrated Device Technology, Inc. and the architecture is supported by Micron Technology and Motorola Inc.
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IDT71T75602S200PF8 功能描述:IC SRAM 18MBIT 200MHZ 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 产品变化通告:Product Discontinuation 05/Nov/2008 标准包装:84 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 ZBT 存储容量:4.5M(128K x 36) 速度:75ns 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:-40°C ~ 85°C 封装/外壳:119-BGA 供应商设备封装:119-PBGA(14x22) 包装:托盘 其它名称:71V3557SA75BGI
IDT71T75602S200PFG 功能描述:IC SRAM 18MBIT 200MHZ 100TQFP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 产品变化通告:Product Discontinuation 05/Nov/2008 标准包装:84 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 ZBT 存储容量:4.5M(128K x 36) 速度:75ns 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:-40°C ~ 85°C 封装/外壳:119-BGA 供应商设备封装:119-PBGA(14x22) 包装:托盘 其它名称:71V3557SA75BGI
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