参数资料
型号: IDT71T75602S200PFGI8
厂商: IDT, Integrated Device Technology Inc
文件页数: 12/23页
文件大小: 0K
描述: IC SRAM 18MBIT 200MHZ 100TQFP
产品变化通告: Product Discontinuation 31/Jan/2010
标准包装: 1,000
格式 - 存储器: RAM
存储器类型: SRAM - 同步 ZBT
存储容量: 18M(512K x 36)
速度: 200MHz
接口: 并联
电源电压: 2.375 V ~ 2.625 V
工作温度: -40°C ~ 85°C
封装/外壳: 100-LQFP
供应商设备封装: 100-TQFP(14x14)
包装: 带卷 (TR)
其它名称: 71T75602S200PFGI8
IDT71T75602, IDT71T75802, 512K x 36, 1M x 18, 2.5V Synchronous ZBT? SRAMs with
2.5V I/O, Burst Counter, and Pipelined Outputs Commercial and Industrial Temperature Ranges
Read Operation with Chip Enable Used (1)
Cycle
n
n+1
n+2
n+3
n+4
n+5
n+6
n+7
n+8
n+9
Address
X
X
A 0
X
A 1
X
X
A 2
X
X
R/ W
X
X
H
X
H
X
X
H
X
X
ADV/ LD
L
L
L
L
L
L
L
L
L
L
CE (2)
H
H
L
H
L
H
H
L
H
H
CEN
L
L
L
L
L
L
L
L
L
L
BW x
X
X
X
X
X
X
X
X
X
X
OE
X
X
X
X
L
X
L
X
X
L
I/O (3)
?
?
Z
Z
Q 0
Z
Q 1
Z
Z
Q 2
Comments
Deselected.
Deselected.
Address and Control meet setup.
Deselected or STOP.
Address A 0 Read out. Load A 1 .
Deselected or STOP.
Address A 1 Read out. Deselected.
Address and control meet setup.
Deselected or STOP.
Address A 2 Read out. Deselected.
NOTES:
1. H = High; L = Low; X = Don’t Care; ? = Don’t Know; Z = High Impedance.
2. CE = L is defined as CE 1 = L, CE 2 = L and CE 2 = H. CE = H is defined as CE 1 = H, CE 2 = H or CE 2 = L.
3. Device Outputs are ensured to be in High-Z after the first rising edge of clock upon power-up.
Write Operation with Chip Enable Used (1)
5313 tbl 19
Cycle
n
n+1
n+2
n+3
n+4
n+5
n+6
n+7
n+8
n+9
Address
X
X
A 0
X
A 1
X
X
A 2
X
X
R/ W
X
X
L
X
L
X
X
L
X
X
ADV /LD
L
L
L
L
L
L
L
L
L
L
CE (2)
H
H
L
H
L
H
H
L
H
H
CEN
L
L
L
L
L
L
L
L
L
L
BW x
X
X
L
X
L
X
X
L
X
X
OE
X
X
X
X
X
X
X
X
X
X
I/O
?
?
Z
Z
D 0
Z
D 1
Z
Z
D 2
Comments
Deselected.
Deselected.
Address and Control meet setup.
Deselected or STOP.
Address D 0 Write in. Load A 1 .
Deselected or STOP.
Address D 1 Write in. Deselected.
Address and control meet setup.
Deselected or STOP.
Address D 2 Write in. Deselected.
NOTES:
1. H = High; L = Low; X = Don’t Care; ? = Don’t Know; Z = High Impedance.
2. CE = L is defined as CE 1 = L, CE 2 = L and CE 2 = H. CE = H is defined as CE 1 = H, CE 2 = H or CE 2 = L.
12
6.42
5313 tbl 20
相关PDF资料
PDF描述
VI-J5D-CX-F1 CONVERTER MOD DC/DC 85V 75W
GCC12DRTS CONN EDGECARD 24POS DIP .100 SLD
PSC12R-090-R-C2 ADAPTER WALL R-SERIES 10W 9V
MW170KB2403B01 PWR SPLY EXT MED 15.1W 24V @.63A
IDT71T75602S200PFGI IC SRAM 18MBIT 200MHZ 100TQFP
相关代理商/技术参数
参数描述
IDT71T75602S200PFI 功能描述:IC SRAM 18MBIT 200MHZ 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 产品变化通告:Product Discontinuation 05/Nov/2008 标准包装:84 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 ZBT 存储容量:4.5M(128K x 36) 速度:75ns 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:-40°C ~ 85°C 封装/外壳:119-BGA 供应商设备封装:119-PBGA(14x22) 包装:托盘 其它名称:71V3557SA75BGI
IDT71T75602S200PFI8 功能描述:IC SRAM 18MBIT 200MHZ 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 产品变化通告:Product Discontinuation 05/Nov/2008 标准包装:84 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 ZBT 存储容量:4.5M(128K x 36) 速度:75ns 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:-40°C ~ 85°C 封装/外壳:119-BGA 供应商设备封装:119-PBGA(14x22) 包装:托盘 其它名称:71V3557SA75BGI
IDT71T75702S75BG 功能描述:IC SRAM 18MBIT 75NS 119BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 产品变化通告:Product Discontinuation 05/Nov/2008 标准包装:84 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 ZBT 存储容量:4.5M(128K x 36) 速度:75ns 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:-40°C ~ 85°C 封装/外壳:119-BGA 供应商设备封装:119-PBGA(14x22) 包装:托盘 其它名称:71V3557SA75BGI
IDT71T75702S75BG8 功能描述:IC SRAM 18MBIT 75NS 119BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 产品变化通告:Product Discontinuation 05/Nov/2008 标准包装:84 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 ZBT 存储容量:4.5M(128K x 36) 速度:75ns 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:-40°C ~ 85°C 封装/外壳:119-BGA 供应商设备封装:119-PBGA(14x22) 包装:托盘 其它名称:71V3557SA75BGI
IDT71T75702S75BGI 功能描述:IC SRAM 18MBIT 75NS 119BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 产品变化通告:Product Discontinuation 05/Nov/2008 标准包装:84 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 ZBT 存储容量:4.5M(128K x 36) 速度:75ns 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:-40°C ~ 85°C 封装/外壳:119-BGA 供应商设备封装:119-PBGA(14x22) 包装:托盘 其它名称:71V3557SA75BGI