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参数资料
| 型号： | IDT71T75802S200BGG8 |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 10/23页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 18MBIT 200MHZ 119BGA |
| 标准包装： | 1,000 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM - 同步 ZBT |
| 存储容量： | 18M（1M x 18） |
| 速度： | 200MHz |
| 接口： | 并联 |
| 电源电压： | 2.375 V ~ 2.625 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 119-BGA |
| 供应商设备封装： | 119-PBGA（14x22） |
| 包装： | 带卷 (TR) |
| 其它名称： | 71T75802S200BGG8 |
IDT71T75602, IDT71T75802, 512K x 36, 1M x 18, 2.5V Synchronous ZBT? SRAMs with
2.5V I/O, Burst Counter, and Pipelined Outputs Commercial and Industrial Temperature Ranges
Burst Read Operation (1)
Cycle
n
n+1
n+2
n+3
n+4
n+5
n+6
n+7
n+8
Address
A 0
X
X
X
X
A 1
X
X
A 2
R/ W
H
X
X
X
X
H
X
X
H
ADV/ LD
L
H
H
H
H
L
H
H
L
CE (2)
L
X
X
X
X
L
X
X
L
CEN
L
L
L
L
L
L
L
L
L
BW x
X
X
X
X
X
X
X
X
X
OE
X
X
L
L
L
L
L
L
L
I/O
X
X
Q 0
Q 0+1
Q 0+2
Q 0+3
Q 0
Q 1
Q 1+1
Comments
Address and Control meet setup
Clock Setup Valid, Advance Counter
Address A 0 Read Out, Inc. Count
Address A 0+1 Read Out, Inc. Count
Address A 0+2 Read Out, Inc. Count
Address A 0+3 Read Out, Load A 1
Address A 0 Read Out, Inc. Count
Address A 1 Read Out, Inc. Count
Address A 1+1 Read Out, Load A 2
NOTES:
1. H = High; L = Low; X = Don’t Care; Z = High Impedance.
2. CE = L is defined as CE 1 = L, CE 2 = L and CE 2 = H. CE = H is defined as CE 1 = H, CE 2 = H or CE 2 = L.
Write Operation (1)
5313 tbl 14
Cycle
n
n+1
n+2
Address
A 0
X
X
R/ W
L
X
X
ADV/ LD
L
X
X
CE (2)
L
X
X
CEN
L
L
L
BW x
L
X
X
OE
X
X
X
I/O
X
X
D 0
Comments
Address and Control meet setup
Clock Setup Valid
Write to Address A 0
NOTES:
1. H = High; L = Low; X = Don’t Care; Z = High Impedance.
2. CE = L is defined as CE 1 = L, CE 2 = L and CE 2 = H. CE = H is defined as CE 1 = H, CE 2 = H or CE 2 = L.
Burst Write Operation (1)
5313 tbl 15
Cycle
n
n+1
n+2
n+3
n+4
n+5
n+6
n+7
n+8
Address
A 0
X
X
X
X
A 1
X
X
A 2
R/ W
L
X
X
X
X
L
X
X
L
ADV/ LD
L
H
H
H
H
L
H
H
L
CE (2)
L
X
X
X
X
L
X
X
L
CEN
L
L
L
L
L
L
L
L
L
BW x
L
L
L
L
L
L
L
L
L
OE
X
X
X
X
X
X
X
X
X
I/O
X
X
D 0
D 0+1
D 0+2
D 0+3
D 0
D 1
D 1+1
Comments
Address and Control meet setup
Clock Setup Valid, Inc. Count
Address A 0 Write, Inc. Count
Address A 0+1 Write, Inc. Count
Address A 0+2 Write, Inc. Count
Address A 0+3 Write, Load A 1
Address A 0 Write, Inc. Count
Address A 1 Write, Inc. Count
Address A 1+1 Write, Load A 2
NOTES:
1. H = High; L = Low; X = Don’t Care; ? = Don’t Know; Z = High Impedance.
2. CE = L is defined as CE 1 = L, CE 2 = L and CE 2 = H. CE = H is defined as CE 1 = H, CE 2 = H or CE 2 = L.
10
6.42
5313 tbl 16
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IDT71T75802S200BGGI | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 18MBIT 200MHZ 119BGA |
| IDT71T75802S200BGGI8 | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 18MBIT 200MHZ 119BGA |
| IDT71T75802S200BGI | 功能描述:IC SRAM 18MBIT 200MHZ 119BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口，同步 存储容量:1.125M（32K x 36） 速度:5ns 接口:并联 电源电压:3.15 V ~ 3.45 V 工作温度:-40°C ~ 85°C 封装/外壳:256-LBGA 供应商设备封装:256-CABGA（17x17） 包装:带卷 (TR) 其它名称:70V3579S5BCI8 |
| IDT71T75802S200BGI8 | 功能描述:IC SRAM 18MBIT 200MHZ 119BGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:45 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 双端口，异步 存储容量:128K（8K x 16） 速度:15ns 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:0°C ~ 70°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP（14x14） 包装:托盘 其它名称:70V25S15PF |
| IDT71T75802S200PF | 功能描述:IC SRAM 18MBIT 200MHZ 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 产品变化通告:Product Discontinuation 05/Nov/2008 标准包装:84 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 ZBT 存储容量:4.5M（128K x 36） 速度:75ns 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:-40°C ~ 85°C 封装/外壳:119-BGA 供应商设备封装:119-PBGA（14x22） 包装:托盘 其它名称:71V3557SA75BGI |
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