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参数资料
| 型号： | IDT71V016SA10BF8 |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 1MBIT 10NS 48FBGA |
| 标准包装： | 2,000 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM - 异步 |
| 存储容量： | 1M (64K x 16) |
| 速度： | 10ns |
| 接口： | 并联 |
| 电源电压： | 3.15 V ~ 3.6 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 48-LFBGA |
| 供应商设备封装： | 48-CABGA（7x7） |
| 包装： | 带卷 (TR) |
| 其它名称： | 71V016SA10BF8 |
3.3V CMOS Static RAM
1 Meg (64K x 16-Bit)
IDT71V016SA
64K x 16 advanced high-speed CMOS Static RAM
Features
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Description
The IDT71V016 is a 1,048,576-bit high-speed Static RAM organized
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Equal access and cycle times
— Commercial: 10/12/15/20ns
— Industrial: 10/12/15/20ns
One Chip Select plus one Output Enable pin
Bidirectional data inputs and outputs directly
LVTTL-compatible
Low power consumption via chip deselect
Upper and Lower Byte Enable Pins
Single 3.3V power supply
Available in 44-pin Plastic SOJ, 44-pin TSOP, and
48-Ball Plastic FBGA packages
as 64K x 16. It is fabricated using high-perfomance, high-reliability CMOS
technology. This state-of-the-art technology, combined with innovative
circuit design techniques, provides a cost-effective solution for high-speed
memory needs.
The IDT71V016 has an output enable pin which operates as fast as
5ns, with address access times as fast as 10ns. All bidirectional inputs and
outputs of the IDT71V016 are LVTTL compatible and operation is from a
single 3.3V supply. Fully static asynchronous circuitry is used, requiring
no clocks or refresh for operation.
The IDT71V016 is packaged in a JEDEC standard 44-pin Plastic SOJ,
a 44-pin TSOP Type II, and a 48-ball plastic 7 x 7 mm FBGA.
Functional Block Diagram
OE
Output
Enable
Buffer
A 0 – A 15
Address
Buffers
Row / Column
Decoders
I/O 15
CS
Chip
Enable
8
High
Byte
I/O
8
Buffer
Buffer
I/O 8
64K x 16
Memory
16
Sense
Amps
and
WE
Write
Enable
Buffer
Array
Write
Drivers
8
Low
Byte
8
I/O 7
I/O
Buffer
I/O 0
BHE
Byte
Enable
Buffers
BLE
3834 drw 01
1
AUGUST 2013
? 2013
Integrated Device Technology, Inc. All rights reserved. Product specifications subject to change without notice.
DSC-3834/13
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IDT71V016SA10BFG | 功能描述:IC SRAM 1MBIT 10NS 48FBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:72 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 存储容量:4.5M（256K x 18） 速度:133MHz 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:0°C ~ 70°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP（14x20） 包装:托盘 |
| IDT71V016SA10BFG8 | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 1MBIT 10NS 48CABGA |
| IDT71V016SA10BFGI | 功能描述:IC SRAM 1MBIT 10NS 48FBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:72 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 存储容量:4.5M（256K x 18） 速度:133MHz 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:0°C ~ 70°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP（14x20） 包装:托盘 |
| IDT71V016SA10BFGI8 | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 1MBIT 10NS 48CABGA |
| IDT71V016SA10PH | 功能描述:IC SRAM 1MBIT 10NS 44TSOP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 产品变化通告:Product Discontinuation 05/Nov/2008 标准包装:84 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 ZBT 存储容量:4.5M（128K x 36） 速度:75ns 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:-40°C ~ 85°C 封装/外壳:119-BGA 供应商设备封装:119-PBGA（14x22） 包装:托盘 其它名称:71V3557SA75BGI |
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