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参数资料
| 型号： | IDT71V016SA10BF |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 7/9页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 1MBIT 10NS 48FBGA |
| 标准包装： | 476 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM - 异步 |
| 存储容量： | 1M (64K x 16) |
| 速度： | 10ns |
| 接口： | 并联 |
| 电源电压： | 3.15 V ~ 3.6 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 48-LFBGA |
| 供应商设备封装： | 48-CABGA（7x7） |
| 包装： | 托盘 |
| 其它名称： | 71V016SA10BF |
IDT71V016SA, 3.3V CMOS Static RAM
1 Meg (64K x 16-Bit)
Commercial and Industrial Temperature Ranges
Timing Waveform of Write Cycle No. 2 ( CS Controlled Timing) (1,4)
t WC
ADDRESS
t AW
CS
BHE , BLE
WE
DATA OUT
t AS
t BW
t WP
t CW (2)
t WR
t DW
t DH
DATA IN
DATA IN VALID
3834 drw 09
Timing Waveform of Write Cycle No. 3 ( BHE , BLE Controlled Timing) (1,4)
t WC
ADDRESS
t AW
CS
BHE, BLE
t AS
t CW
(2)
t BW
WE
DATA OUT
t WP
t DW
t WR
t DH
DATA IN
DATA IN VALID
3834 drw 10
NOTES:
1. A write occurs during the overlap of a LOW CS , LOW BHE or BLE , and a LOW WE .
2. OE is continuously HIGH. If during a WE controlled write cycle OE is LOW, t WP must be greater than or equal to t WHZ + t DW to allow the I/O drivers to turn off and data to be placed
on the bus for the required t DW . If OE is HIGH during a WE controlled write cycle, this requirement does not apply and the minimum write pulse is as short as the specified t WP .
3. During this period, I/O pins are in the output state, and input signals must not be applied.
4. If the CS LOW or BHE and BLE LOW transition occurs simultaneously with or after the WE LOW transition, the outputs remain in a high-impedance state.
5. Transition is measured ±200mV from steady state.
7
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| IDT71V016SA10BF8 | 功能描述:IC SRAM 1MBIT 10NS 48FBGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:72 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 存储容量:4.5M（256K x 18） 速度:133MHz 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:0°C ~ 70°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP（14x20） 包装:托盘 |
| IDT71V016SA10BFG | 功能描述:IC SRAM 1MBIT 10NS 48FBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:72 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 存储容量:4.5M（256K x 18） 速度:133MHz 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:0°C ~ 70°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP（14x20） 包装:托盘 |
| IDT71V016SA10BFG8 | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 1MBIT 10NS 48CABGA |
| IDT71V016SA10BFGI | 功能描述:IC SRAM 1MBIT 10NS 48FBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:72 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 存储容量:4.5M（256K x 18） 速度:133MHz 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:0°C ~ 70°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP（14x20） 包装:托盘 |
| IDT71V016SA10BFGI8 | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 1MBIT 10NS 48CABGA |
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