参数资料
型号: IDT71V016SA12BFG
厂商: IDT, Integrated Device Technology Inc
文件页数: 3/9页
文件大小: 0K
描述: IC SRAM 1MBIT 12NS 48FBGA
标准包装: 476
格式 - 存储器: RAM
存储器类型: SRAM - 异步
存储容量: 1M (64K x 16)
速度: 12ns
接口: 并联
电源电压: 3 V ~ 3.6 V
工作温度: 0°C ~ 70°C
封装/外壳: 48-LFBGA
供应商设备封装: 48-CABGA(7x7)
包装: 托盘
其它名称: 71V016SA12BFG
IDT71V016SA, 3.3V CMOS Static RAM
1 Meg (64K x 16-Bit)
Commercial and Industrial Temperature Ranges
Absolute Maximum Ratings (1)
Symbol Rating Value
Unit
Recommended Operating
Temperature and Supply Voltage
V DD
V IN , V OUT
Supply Voltage Relative to V SS
Terminal Voltage Relative to V SS
–0.5 to +4.6
–0.5 to V DD +0.5
V
V
Grade
Commercial
Temperature
0°C to +70°C
V SS
0V
V DD
See Below
T BIAS
T STG
Temperature Under Bias
Storage Temperature
–55 to +125
–55 to +125
o
o
C
C
Industrial
-40°C to +85°C
0V
See Below
3834 tbl 04
P T
I OUT
NOTE:
Power Dissipation
DC Output Current
1.25
50
W
mA
3834 tbl 03
Recommended DC Operating
Conditions
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation
Symbol
Parameter
Min.
Typ.
Max.
Unit
of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
V DD
V DD
(1)
(2)
Supply Voltage
Supply Voltage
3.15
3.0
3.3
3.3
3.6
3.6
V
V
Capacitance
(T A = +25°C, f = 1.0MHz, SOJ package)
Vss
V IH
Ground
Input High Voltage
0
2.0
0
____
0
V DD +0.3 (3)
V
V
Symbol
Parameter (1)
Conditions
Max.
Unit
V IL
Input Low Voltage
–0.3 (4)
____
0.8
V
C IN
C I/O
Input Capacitance
I/O Capacitance
V IN = 3dV
V OUT = 3dV
6
7
pF
pF
NOTES:
1. For 71V016SA10 only.
2. For all speed grades except 71V016SA10.
3834 tbl 05
NOTE:
3834 tbl 06
1. This parameter is guaranteed by device characterization, but not production tested.
3. V IH (max.) = V DD +2V for pulse width less than 5ns, once per cycle.
4. V IL (min.) = –2V for pulse width less than 5ns, once per cycle.
DC Electrical Characteristics
(V DD = Min. to Max., Commercial and Industrial Temperature Ranges)
IDT71V016SA
Symbol
|I LI |
|I LO |
V OL
V OH
Parameter
Input Leakage Current
Output Leakage Current
Output Low Voltage
Output High Voltage
Test Condition
V DD = Max., V IN = V SS to V DD
V DD = Max., CS = V IH , V OUT = V SS to V DD
I OL = 8mA, V DD = Min.
I OH = –4mA, V DD = Min.
Min.
___
___
___
2.4
Max.
5
5
0.4
___
Unit
μA
μA
V
V
3834 tbl 07
DC Electrical Characteristics (1,2)
(V DD = Min. to Max., V LC = 0.2V, V HC = V DD – 0.2V)
71V016SA10
71V016SA12
71V016SA15
71V016SA20
Symbol
Parameter
Com'l
Ind'l
Com'l
Ind'l
Com'l
Ind'l
Com'l
Ind'l
Unit
Typ.
I CC
I SB
I SB1
Dynamic Operating Current
CS ≤ V LC , Outputs Open, V DD = Max., f = f MAX (3)
Dynamic Standby Power Supply Current
CS ≥ V HC , Outputs Open, V DD = Max., f = f MAX (3)
Full Standby Power Supply Current (static)
CS ≥ V HC , Outputs Open, V DD = Max., f = 0 (3)
Max.
(4)
160
65
45
10
170
--
50
10
150
60
40
10
160
--
45
10
130
55
35
10
130
--
35
10
120
50
30
10
120
--
30
10
mA
mA
mA
NOTES:
1. All values are maximum guaranteed values.
2. All inputs switch between 0.2V (Low) and V DD – 0.2V (High).
3. f MAX = 1/t RC (all address inputs are cycling at f MAX ); f = 0 means no address input lines are changing .
4. Typical values are based on characterization data for H step only measured at 3.3V, 25°C and with equal read and write cycles.
3
3834 tbl 08
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