参数资料
型号: IDT71V30S55TF
厂商: IDT, Integrated Device Technology Inc
文件页数: 10/14页
文件大小: 0K
描述: IC SRAM 8KBIT 55NS 64TQFP
标准包装: 40
格式 - 存储器: RAM
存储器类型: SRAM - 双端口,异步
存储容量: 8K (1K x 8)
速度: 55ns
接口: 并联
电源电压: 3 V ~ 3.6 V
工作温度: 0°C ~ 70°C
封装/外壳: 64-LQFP
供应商设备封装: 64-TQFP(10x10)
包装: 托盘
其它名称: 71V30S55TF
IDT71V30S/L
High-Speed 1K x 8 Dual-Port Static RAM with Interrupts
Timing Waveform of Write with BUSY (3)
t WP
R/ W 'A'
t WB
BUSY 'B'
Industrial and Commercial Temperature Ranges
t WH
(1)
NOTES:
1. t WH must be met for BUSY .
R/ W 'B'
(2)
3741 drw 11
,
2. BUSY is asserted on port 'B' blocking R/ W 'B' , until BUSY 'B' goes HIGH.
3. All timing is the same for the left and right ports. Port 'A' may be either the left or right port. Port "B" is opposite from port "A".
Timing Waveform of BUSY Arbitration Controlled by CE Timing (1)
ADDR
'A' AND 'B'
CE 'B'
CE 'A'
t APS (2)
t BAC
ADDRESSES MATCH
t BDC
BUSY 'A'
3741 drw 12
NOTES:
1. All timing is the same for left and right ports. Port “A” may be either left or right port. Port “B” is the opposite from port “A”.
2. If t APS is not satisified, the BUSY will be asserted on one side or the other, but there is no guarantee on which side BUSY will be asserted.
Timing Waveform of BUSY Arbitration Controlled Address Match Timing (1)
t RC
OR t WC
ADDR 'A'
ADDR 'B'
t APS
(2)
ADDRESSES MATCH
t BAA
ADDRESSES DO NOT MATCH
t BDA
BUSY 'B'
3741 drw 13
NOTES:
1. All timing is the same for left and right ports. Port “A” may be either left or right port. Port “B” is the opposite from port “A”.
2. If t APS is not satisified, the BUSY will be asserted on one side or the other, but there is no guarantee on which side BUSY will be asserted.
10
6.42
相关PDF资料
PDF描述
IDT7130LA25TFI8 IC SRAM 8KBIT 25NS 64STQFP
IDT7130LA55TF IC SRAM 8KBIT 55NS 64STQFP
1734592-9 CONN FPC 9POS .5MM RT ANG SMD
XC2V8000-4FFG1152I IC FPGA VIRTEX-II 8M 1152-FBGA
3-84534-0 CONN FFC 30POS 1.25MM VERT T/H
相关代理商/技术参数
参数描述
IDT71V30S55TF8 功能描述:IC SRAM 8KBIT 55NS 64TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:2,000 系列:MoBL® 格式 - 存储器:RAM 存储器类型:SRAM - 异步 存储容量:16M(2M x 8,1M x 16) 速度:45ns 接口:并联 电源电压:2.2 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-VFBGA 供应商设备封装:48-VFBGA(6x8) 包装:带卷 (TR)
IDT71V30S55TFG 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 8KBIT 55NS 64TQFP
IDT71V30S55TFG8 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 8KBIT 55NS 64TQFP
IDT71V321L25J 功能描述:IC SRAM 16KBIT 25NS 52PLCC RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:72 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 存储容量:9M(256K x 36) 速度:75ns 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:-40°C ~ 85°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP(14x14) 包装:托盘 其它名称:71V67703S75PFGI
IDT71V321L25J8 功能描述:IC SRAM 16KBIT 25NS 52PLCC RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:72 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 存储容量:9M(256K x 36) 速度:75ns 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:-40°C ~ 85°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP(14x14) 包装:托盘 其它名称:71V67703S75PFGI