参数资料
型号: IDT71V321L35J
厂商: IDT, Integrated Device Technology Inc
文件页数: 3/15页
文件大小: 0K
描述: IC SRAM 16KBIT 35NS 52PLCC
标准包装: 24
格式 - 存储器: RAM
存储器类型: SRAM - 双端口,异步
存储容量: 16K (2K x 8)
速度: 35ns
接口: 并联
电源电压: 3 V ~ 3.6 V
工作温度: 0°C ~ 70°C
封装/外壳: 52-LCC(J 形引线)
供应商设备封装: 52-PLCC(19x19)
包装: 管件
其它名称: 71V321L35J
IDT71V321/71V421S/L
High Speed 3.3V 2K x 8 Dual-Port Static RAM with Interrupts
Industrial and Commercial Temperature Ranges
Absolute Maximum Ratings (1)
Symbol Rating Commercial
Unit
Recommended Operating
Temperature and Supply Voltage (1,2)
& Industrial
Grade
Ambient
GND
Vcc
V TERM (2)
Terminal Voltage
-0.5 to +4.6
V
Temperature
with Respect
to GND
Commercial
0 O C to +70 O C
0V
3.3V + 0.3V
T A
Operating
Temperature
0 to +70
°C
Industrial
NOTES:
-40 O C to +85 O C
0V
3.3V + 0.3V
3026 tbl 02
T BIAS
Temperature
-55 to +125
o
C
1. This is the parameter T A . This is the "instant on" case temperature.
Under Bias
2. Industrial temperature: for specific speeds, packages and powers contact your
T STG
Storage
-65 to +150
o
C
sales office.
Temperature
I OUT
DC Output
Current
50
mA
3026 tbl 01
Recommended DC Operating
Conditions
V CC +0.3
-0.3
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS
may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions
above those indicated in the operational sections of the specification is not
implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
2. V TERM must not exceed V CC + 10% for more than 25% of the cycle time or 10ns
maximum, and is limited to < 20mA for the period of V TERM > V CC + 10%.
Symbol
V CC
GND
V IH
V IL
Parameter
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Min.
3.0
0
2.0
(1)
Typ.
3.3
0
____
____
Max.
3.6
0
0.8
(2)
Unit
V
V
V
V
3026 tbl 03
NOTES:
1. V IL (min.) = -1.5V for pulse width less than 20ns.
Capacitance (1)
(TA = +25°C, f = 1.0MHz) TQFP Only
2. V TERM must not exceed Vcc + 0.3V.
Symbol
C IN
C OUT
Parameter
Input Capacitance
Output Capacitance
Conditions (2)
V IN = 3dV
V OUT = 3dV
Max.
9
10
Unit
pF
pF
NOTES:
3026 tbl 04
1. This parameter is determined by device characterization but is not production
tested.
2. 3dv references the interpolated capacitance when the input and output signals
switch from 0V to 3V or from 3V to 0V.
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range (V CC = 3.3V ± 0.3V)
71V321S
71V421S
71V321L
71V421L
Input Leakage Current
Symbol
|I LI |
Parameter
(1)
V CC = 3.6V,
Test Conditions
Min.
___
Max.
10
Min.
___
Max.
5
Unit
μA
V IN = 0V to V CC
|I LO |
Output Leakage Current
CE = V IH , V OUT = 0V to V CC
___
10
___
5
μA
V CC = 3.6V
V OL
V OH
Output Low Voltage
Output High Voltage
I OL = 4mA
I OH = -4mA
___
2.4
0.4
___
___
2.4
0.4
___
V
V
NOTE:
1. At V CC < 2.0V input leakages are undefined.
3
6.42
3026 tbl 05
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