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参数资料
| 型号： | IDT71V3576S150PF |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 8/18页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 4MBIT 150MHZ 100TQFP |
| 标准包装： | 72 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM - 同步 |
| 存储容量： | 4.5M（128K x 36） |
| 速度： | 150MHz |
| 接口： | 并联 |
| 电源电压： | 3.135 V ~ 3.465 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 100-LQFP |
| 供应商设备封装： | 100-TQFP（14x14） |
| 包装： | 托盘 |
| 其它名称： | 71V3576S150PF |
IDT71V3576, IDT71V3578, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
3.3V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect Commercial and Industrial Temperature Ranges
Synchronous Truth Table (1,3)
Operation
Deselected Cycle, Power Down
Deselected Cycle, Power Down
Deselected Cycle, Power Down
Deselected Cycle, Power Down
Deselected Cycle, Power Down
Read Cycle, Begin Burst
Read Cycle, Begin Burst
Read Cycle, Begin Burst
Read Cycle, Begin Burst
Read Cycle, Begin Burst
Write Cycle, Begin Burst
Write Cycle, Begin Burst
Read Cycle, Continue Burst
Read Cycle, Continue Burst
Read Cycle, Continue Burst
Read Cycle, Continue Burst
Read Cycle, Continue Burst
Read Cycle, Continue Burst
Read Cycle, Continue Burst
Read Cycle, Continue Burst
Write Cycle, Continue Burst
Write Cycle, Continue Burst
Write Cycle, Continue Burst
Write Cycle, Continue Burst
Read Cycle, Suspend Burst
Read Cycle, Suspend Burst
Read Cycle, Suspend Burst
Read Cycle, Suspend Burst
Read Cycle, Suspend Burst
Read Cycle, Suspend Burst
Read Cycle, Suspend Burst
Read Cycle, Suspend Burst
Write Cycle, Suspend Burst
Write Cycle, Suspend Burst
Write Cycle, Suspend Burst
Write Cycle, Suspend Burst
Address
Used
None
None
None
None
None
External
External
External
External
External
External
External
Next
Next
Next
Next
Next
Next
Next
Next
Next
Next
Next
Next
Current
Current
Current
Current
Current
Current
Current
Current
Current
Current
Current
Current
CE
H
L
L
L
L
L
L
L
L
L
L
L
X
X
X
X
H
H
H
H
X
X
H
H
X
X
X
X
H
H
H
H
X
X
H
H
CS 0
X
X
L
X
L
H
H
H
H
H
H
H
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
CS 1
X
H
X
H
X
L
L
L
L
L
L
L
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
ADSP
X
L
L
X
X
L
L
H
H
H
H
H
H
H
H
H
X
X
X
X
H
H
X
X
H
H
H
H
X
X
X
X
H
H
X
X
ADSC
L
X
X
L
L
X
X
L
L
L
L
L
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
H
ADV
X
X
X
X
X
X
X
X
X
X
X
X
L
L
L
L
L
L
L
L
L
L
L
L
H
H
H
H
H
H
H
H
H
H
H
H
GW
X
X
X
X
X
X
X
H
H
H
H
L
H
H
H
H
H
H
H
H
H
L
H
L
H
H
H
H
H
H
H
H
H
L
H
L
BWE
X
X
X
X
X
X
X
H
L
L
L
X
H
H
X
X
H
H
X
X
L
X
L
X
H
H
X
X
H
H
X
X
L
X
L
X
BW x
X
X
X
X
X
X
X
X
H
H
L
X
X
X
H
H
X
X
H
H
L
X
L
X
X
X
H
H
X
X
H
H
L
X
L
X
OE
(2)
X
X
X
X
X
L
H
L
L
H
X
X
L
H
L
H
L
H
L
H
X
X
X
X
L
H
L
H
L
H
L
H
X
X
X
X
CLK
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
I/O
HI-Z
HI-Z
HI-Z
HI-Z
HI-Z
D OUT
HI-Z
D OUT
D OUT
HI-Z
D IN
D IN
D OUT
HI-Z
D OUT
HI-Z
D OUT
HI-Z
D OUT
HI-Z
D IN
D IN
D IN
D IN
D OUT
HI-Z
D OUT
HI-Z
D OUT
HI-Z
D OUT
HI-Z
D IN
D IN
D IN
D IN
NOTES:
1. L = V IL , H = V IH , X = Don’t Care.
2. OE is an asynchronous input.
3. ZZ = low for this table.
8
6.42
5279 tbl 11
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IDT71V3576S150PF8 | 功能描述:IC SRAM 4MBIT 150MHZ 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:576 系列:- 格式 - 存储器:闪存 存储器类型:闪存 - NAND 存储容量:512M（64M x 8） 速度:- 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-TFSOP（0.724"，18.40mm 宽） 供应商设备封装:48-TSOP 包装:托盘 其它名称:497-5040 |
| IDT71V3576S150PFG | 功能描述:IC SRAM 4MBIT 150MHZ 100TQFP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:72 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 存储容量:4.5M（256K x 18） 速度:133MHz 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:0°C ~ 70°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP（14x20） 包装:托盘 |
| IDT71V3576S150PFG8 | 功能描述:IC SRAM 4MBIT 150MHZ 100TQFP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:72 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 存储容量:4.5M（256K x 18） 速度:133MHz 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:0°C ~ 70°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP（14x20） 包装:托盘 |
| IDT71V3576S150PFGI | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 4.5MBIT 150MHZ 100TQFP |
| IDT71V3576S150PFGI8 | 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 4.5MBIT 150MHZ 100TQFP |
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