参数资料
型号: IDT71V3578S133PFGI
厂商: IDT, Integrated Device Technology Inc
文件页数: 9/18页
文件大小: 0K
描述: IC SRAM 4MBIT 133MHZ 100TQFP
标准包装: 72
格式 - 存储器: RAM
存储器类型: SRAM - 同步
存储容量: 4.5M(256K x 18)
速度: 133MHz
接口: 并联
电源电压: 3.135 V ~ 3.465 V
工作温度: -40°C ~ 85°C
封装/外壳: 100-LQFP
供应商设备封装: 100-TQFP(14x14)
包装: 托盘
其它名称: 71V3578S133PFGI
IDT71V3576, IDT71V3578, 128K x 36, 256K x 18, 3.3V Synchronous SRAMs with
3.3V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect Commercial and Industrial Temperature Ranges
Synchronous Write Function Truth Table (1, 2)
Write Byte 1
Write Byte 2
Write Byte 3
Write Byte 4
Operation
Read
Read
Write all Bytes
Write all Bytes
(3)
(3)
(3)
(3)
GW
H
H
L
H
H
H
H
H
BWE
H
L
X
L
L
L
L
L
BW 1
X
H
X
L
L
H
H
H
BW 2
X
H
X
L
H
L
H
H
BW 3
X
H
X
L
H
H
L
H
BW 4
X
H
X
L
H
H
H
L
NOTES:
1. L = V IL , H = V IH , X = Don’t Care.
2. BW 3 and BW 4 are not applicable for the IDT71V3578.
3. Multiple bytes may be selected during the same cycle.
Asynchronous Truth Table (1)
5279 tbl 12
Operation (2)
Read
Read
Write
Deselected
Sleep Mode
OE
L
H
X
X
X
ZZ
L
L
L
L
H
I/O Status
Data Out
High-Z
High-Z – Data In
High-Z
High-Z
Power
Active
Active
Active
Standby
Sleep
NOTES:
1. L = V IL , H = V IH , X = Don’t Care.
2. Synchronous function pins must be biased appropriately to satisfy operation requirements.
Interleaved Burst Sequence Table ( LBO =V DD )
5279 tbl 13
Sequence 1
Sequence 2
Sequence 3
Sequence 4
A1
A0
A1
A0
A1
A0
A1
A0
First Address
Second Address
Third Address
0
0
1
0
1
0
0
0
1
1
0
1
1
1
0
0
1
0
1
1
0
1
0
1
Fourth Address
(1)
1
1
1
0
0
1
0
0
NOTE:
1. Upon completion of the Burst sequence the counter wraps around to its initial state.
Linear Burst Sequence Table ( LBO =V SS )
5279 tbl 14
Sequence 1
Sequence 2
Sequence 3
Sequence 4
A1
A0
A1
A0
A1
A0
A1
A0
First Address
Second Address
Third Address
Fourth Address (1)
0
0
1
1
0
1
0
1
0
1
1
0
1
0
1
0
1
1
0
0
0
1
0
1
1
0
0
1
1
0
1
0
NOTE:
1. Upon completion of the Burst sequence the counter wraps around to its initial state.
9
6.42
5279 tbl 15
相关PDF资料
PDF描述
EMC25DTES CONN EDGECARD 50POS .100 EYELET
ABB75DHBN CONN EDGECARD 150PS R/A .050 SLD
ABB75DHBD CONN EDGECARD 150PS R/A .050 SLD
AMC12DTEF CONN EDGECARD 24POS .100 EYELET
ACB75DHBN CONN EDGECARD 150PS R/A .050 DIP
相关代理商/技术参数
参数描述
IDT71V3578S133PFGI8 功能描述:IC SRAM 4MBIT 133MHZ 100TQFP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:2,000 系列:MoBL® 格式 - 存储器:RAM 存储器类型:SRAM - 异步 存储容量:16M(2M x 8,1M x 16) 速度:45ns 接口:并联 电源电压:2.2 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-VFBGA 供应商设备封装:48-VFBGA(6x8) 包装:带卷 (TR)
IDT71V3578S133PFI 功能描述:IC SRAM 4MBIT 133MHZ 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:576 系列:- 格式 - 存储器:闪存 存储器类型:闪存 - NAND 存储容量:512M(64M x 8) 速度:- 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-TFSOP(0.724",18.40mm 宽) 供应商设备封装:48-TSOP 包装:托盘 其它名称:497-5040
IDT71V3578S133PFI8 功能描述:IC SRAM 4MBIT 133MHZ 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:576 系列:- 格式 - 存储器:闪存 存储器类型:闪存 - NAND 存储容量:512M(64M x 8) 速度:- 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-TFSOP(0.724",18.40mm 宽) 供应商设备封装:48-TSOP 包装:托盘 其它名称:497-5040
IDT71V3578S150PF 功能描述:IC SRAM 4MBIT 150MHZ 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:576 系列:- 格式 - 存储器:闪存 存储器类型:闪存 - NAND 存储容量:512M(64M x 8) 速度:- 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-TFSOP(0.724",18.40mm 宽) 供应商设备封装:48-TSOP 包装:托盘 其它名称:497-5040
IDT71V3578S150PF8 功能描述:IC SRAM 4MBIT 150MHZ 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:576 系列:- 格式 - 存储器:闪存 存储器类型:闪存 - NAND 存储容量:512M(64M x 8) 速度:- 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-TFSOP(0.724",18.40mm 宽) 供应商设备封装:48-TSOP 包装:托盘 其它名称:497-5040