参数资料
型号: IDT71V416L10BEG8
厂商: IDT, Integrated Device Technology Inc
文件页数: 1/9页
文件大小: 0K
描述: IC SRAM 4MBIT 10NS 48FBGA
标准包装: 2,000
格式 - 存储器: RAM
存储器类型: SRAM - 异步
存储容量: 4M (256K x 16)
速度: 10ns
接口: 并联
电源电压: 3 V ~ 3.6 V
工作温度: 0°C ~ 70°C
封装/外壳: 48-TFBGA
供应商设备封装: 48-CABGA(9x9)
包装: 带卷 (TR)
其它名称: 71V416L10BEG8
3.3V CMOS Static RAM
4 Meg (256K x 16-Bit)
IDT71V416S
IDT71V416L
256K x 16 advanced high-speed CMOS Static RAM
JEDEC Center Power / GND pinout for reduced noise.
Equal access and cycle times
One Chip Select plus one Output Enable pin
Bidirectional data inputs and outputs directly
Low power consumption via chip deselect
Upper and Lower Byte Enable Pins
Single 3.3V power supply
Available in 44-pin, 400 mil plastic SOJ package and a 44-
Features
– Commercial and Industrial: 10/12/15ns
LVTTL-compatible
pin, 400 mil TSOP Type II package and a 48 ball grid array,
9mm x 9mm package.
Functional Block Diagram
Description
The IDT71V416 is a 4,194,304-bit high-speed Static RAM organized
as 256K x 16. It is fabricated using high-perfomance, high-reliability CMOS
technology. This state-of-the-art technology, combined with innovative
circuit design techniques, provides a cost-effective solution for high-speed
memory needs.
The IDT71V416 has an output enable pin which operates as fast as
5ns, with address access times as fast as 10ns. All bidirectional inputs and
outputs of the IDT71V416 are LVTTL-compatible and operation is from a
single 3.3V supply. Fully static asynchronous circuitry is used, requiring
no clocks or refresh for operation.
The IDT71V416 is packaged in a 44-pin, 400 mil Plastic SOJ and a
44-pin, 400 mil TSOP Type II package and a 48 ball grid array, 9mm x
9mm package.
OE
Output
Enable
Buffer
A0 - A17
Address
Buffers
Row / Column
Decoders
CS
Chip
Select
8
High
Byte
Output
Buffer
8
I/O 15
WE
Buffer
Write
Enable
Buffer
4,194,304-bit
Memory
Array
16
Sense
Amps
and
Write
Drivers
8
8
High
Byte
Write
Buffer
Low
Byte
Output
Buffer
8
8
I/O 8
I/O 7
8
Low
Byte
Write
8
I/O 0
Buffer
BHE
Byte
Enable
Buffers
BLE
3624 drw 01
FEBRUARY 2013
1
?2013 Integrated Device Technology, Inc.
DSC-3624/10
相关PDF资料
PDF描述
AGM43DTAS-S189 CONN EDGECARD 86POS R/A .156 SLD
XC3090A-7PQ160C IC LOGIC CL ARRAY 9000GAT 160PQF
A1425A-1VQG100C IC FPGA 2500 GATES 100-VQFP
A1440A-1VQ100I IC FPGA 4K GATES 100-VQFP
IDT71V632S7PFGI8 IC SRAM 2MBIT 7NS 100TQFP
相关代理商/技术参数
参数描述
IDT71V416L10BEGI 功能描述:IC SRAM 4MBIT 10NS 48FBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:576 系列:- 格式 - 存储器:闪存 存储器类型:闪存 - NAND 存储容量:512M(64M x 8) 速度:- 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-TFSOP(0.724",18.40mm 宽) 供应商设备封装:48-TSOP 包装:托盘 其它名称:497-5040
IDT71V416L10BEGI8 功能描述:IC SRAM 4MBIT 10NS 48FBGA RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:576 系列:- 格式 - 存储器:闪存 存储器类型:闪存 - NAND 存储容量:512M(64M x 8) 速度:- 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-TFSOP(0.724",18.40mm 宽) 供应商设备封装:48-TSOP 包装:托盘 其它名称:497-5040
IDT71V416L10BEI 功能描述:IC SRAM 4MBIT 10NS 48FBGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:576 系列:- 格式 - 存储器:闪存 存储器类型:闪存 - NAND 存储容量:512M(64M x 8) 速度:- 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-TFSOP(0.724",18.40mm 宽) 供应商设备封装:48-TSOP 包装:托盘 其它名称:497-5040
IDT71V416L10BEI8 功能描述:IC SRAM 4MBIT 10NS 48FBGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:576 系列:- 格式 - 存储器:闪存 存储器类型:闪存 - NAND 存储容量:512M(64M x 8) 速度:- 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-TFSOP(0.724",18.40mm 宽) 供应商设备封装:48-TSOP 包装:托盘 其它名称:497-5040
IDT71V416L10PH 功能描述:IC SRAM 4MBIT 10NS 44TSOP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:576 系列:- 格式 - 存储器:闪存 存储器类型:闪存 - NAND 存储容量:512M(64M x 8) 速度:- 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-TFSOP(0.724",18.40mm 宽) 供应商设备封装:48-TSOP 包装:托盘 其它名称:497-5040