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参数资料
| 型号： | IDT71V416S10PHGI |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 6/9页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 4MBIT 10NS 44TSOP |
| 标准包装： | 26 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM - 异步 |
| 存储容量： | 4M (256K x 16) |
| 速度： | 10ns |
| 接口： | 并联 |
| 电源电压： | 3 V ~ 3.6 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 44-TSOP（0.400"，10.16mm 宽） |
| 供应商设备封装： | 44-TSOP II |
| 包装： | 管件 |
| 其它名称： | 71V416S10PHGI IDT71V416S10PHGI-ND |
IDT71V416S, IDT71V416L, 3.3V CMOS Static RAM
4 Meg (256K x 16-Bit)
Timing Waveform of Read Cycle No. 2
t RC
ADDRESS
t AA
OE
t OE
(1)
Commercial and Industrial Temperature Ranges
t OH
t OHZ (3)
CS
t OLZ
(3)
t CLZ
(3)
t ACS (2)
t CHZ (3)
BHE , BLE
DATA OUT
t BE
(3)
t BLZ
(2)
t BHZ (3)
DATA OUT VALID
3624 drw 07
NOTES:
1. WE is HIGH for Read Cycle.
2. Address must be valid prior to or coincident with the later of CS , BHE , or BLE transition LOW; otherwise t AA is the limiting parameter.
3. Transition is measured ±200mV from steady state.
Timing Waveform of Write Cycle No. 1 ( WE Controlled Timing) (1,2,4)
t WC
ADDRESS
t AW
CS
t CW
(2)
t CHZ
(5)
t BW
BHE , BLE
WE
t WP
t WR
t BHZ
(5)
DATA OUT
t AS
PREVIOUS DATA VALID
(3)
t WHZ
(5)
t OW
(5)
DATA VALID
t DW
t DH
DATA IN
DATA IN VALID
3624 drw 08
NOTES:
1. A write occurs during the overlap of a LOW CS , LOW BHE or BLE , and a LOW WE .
2. OE is continuously HIGH. If during a WE controlled write cycle OE is LOW, t WP must be greater than or equal to t WHZ + t DW to allow the I/O drivers to turn off and data
to be placed on the bus for the required t DW . If OE is HIGH during a WE controlled write cycle, this requirement does not apply and the minimum write pulse is as
short as the specified t WP .
3. During this period, I/O pins are in the output state, and input signals must not be applied.
4. If the CS LOW or BHE and BLE LOW transition occurs simultaneously with or after the WE LOW transition, the outputs remain in a high-impedance state.
5. Transition is measured ±200mV from steady state.
6.42
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IDT71V416S10PHGI8 | 功能描述:IC SRAM 4MBIT 10NS 44TSOP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:72 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 存储容量:4.5M（256K x 18） 速度:133MHz 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:0°C ~ 70°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP（14x20） 包装:托盘 |
| IDT71V416S10PHI | 功能描述:IC SRAM 4MBIT 10NS 44TSOP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:576 系列:- 格式 - 存储器:闪存 存储器类型:闪存 - NAND 存储容量:512M（64M x 8） 速度:- 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-TFSOP（0.724"，18.40mm 宽） 供应商设备封装:48-TSOP 包装:托盘 其它名称:497-5040 |
| IDT71V416S10PHI8 | 功能描述:IC SRAM 4MBIT 10NS 44TSOP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:576 系列:- 格式 - 存储器:闪存 存储器类型:闪存 - NAND 存储容量:512M（64M x 8） 速度:- 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-TFSOP（0.724"，18.40mm 宽） 供应商设备封装:48-TSOP 包装:托盘 其它名称:497-5040 |
| IDT71V416S10Y | 功能描述:IC SRAM 4MBIT 10NS 44SOJ RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:576 系列:- 格式 - 存储器:闪存 存储器类型:闪存 - NAND 存储容量:512M（64M x 8） 速度:- 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-TFSOP（0.724"，18.40mm 宽） 供应商设备封装:48-TSOP 包装:托盘 其它名称:497-5040 |
| IDT71V416S10Y8 | 功能描述:IC SRAM 4MBIT 10NS 44SOJ RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:576 系列:- 格式 - 存储器:闪存 存储器类型:闪存 - NAND 存储容量:512M（64M x 8） 速度:- 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-TFSOP（0.724"，18.40mm 宽） 供应商设备封装:48-TSOP 包装:托盘 其它名称:497-5040 |
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