参数资料
型号: IDT71V424L10YG
厂商: IDT, Integrated Device Technology Inc
文件页数: 1/9页
文件大小: 0K
描述: IC SRAM 4MBIT 10NS 36SOJ
标准包装: 20
格式 - 存储器: RAM
存储器类型: SRAM - 异步
存储容量: 4M (512K x 8)
速度: 10ns
接口: 并联
电源电压: 3 V ~ 3.6 V
工作温度: 0°C ~ 70°C
封装/外壳: 36-BSOJ
供应商设备封装: 36-SOJ
包装: 管件
其它名称: 71V424L10YG
3.3V CMOS Static RAM
4 Meg (512K x 8-Bit)
IDT71V424S
IDT71V424L
512K x 8 advanced high-speed CMOS Static RAM
JEDEC Center Power / GND pinout for reduced noise
Equal access and cycle times
Single 3.3V power supply
One Chip Select plus one Output Enable pin
Bidirectional data inputs and outputs directly
Low power consumption via chip deselect
Available in 36-pin, 400 mil plastic SOJ package and
Features
— Commercial and Industrial: 10/12/15ns
TTL-compatible
44-pin, 400 mil TSOP.
Description
The IDT71V424 is a 4,194,304-bit high-speed Static RAM organized
as 512K x 8. It is fabricated using high-perfomance, high-reliability CMOS
technology. This state-of-the-art technology, combined with innovative
circuit design techniques, provides a cost-effective solution for high-speed
memory needs.
The IDT71V424 has an output enable pin which operates as fast as
5ns, with address access times as fast as 10ns. All bidirectional inputs and
outputs of the IDT71V424 are TTL-compatible and operation is from a
single 3.3V supply. Fully static asynchronous circuitry is used, requiring
no clocks or refresh for operation.
The IDT71V424 is packaged in a 36-pin, 400 mil Plastic SOJ and 44-
pin, 400 mil TSOP.
Functional Block Diagram
A 0
?
?
?
ADDRESS
DECODER
?
?
?
4,194,304-BIT
MEMORY ARRAY
A 18
I/O 0 - I/O 7
8
I/O CONTROL
8
8
? 2013 Integrated Device Technology, Inc.
WE
OE
CS
CONTROL
LOGIC
1
3622 drw 01
SEPTEMBER 2013
DSC-3622/10
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IDT71V424L10YG8 功能描述:IC SRAM 4MBIT 10NS 36SOJ RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:72 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 存储容量:4.5M(256K x 18) 速度:133MHz 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:0°C ~ 70°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP(14x20) 包装:托盘
IDT71V424L10YGI 功能描述:IC SRAM 4MBIT 10NS 36SOJ RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:2,000 系列:MoBL® 格式 - 存储器:RAM 存储器类型:SRAM - 异步 存储容量:16M(2M x 8,1M x 16) 速度:45ns 接口:并联 电源电压:2.2 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-VFBGA 供应商设备封装:48-VFBGA(6x8) 包装:带卷 (TR)
IDT71V424L10YGI8 功能描述:IC SRAM 4MBIT 10NS 36SOJ RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:2,000 系列:MoBL® 格式 - 存储器:RAM 存储器类型:SRAM - 异步 存储容量:16M(2M x 8,1M x 16) 速度:45ns 接口:并联 电源电压:2.2 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-VFBGA 供应商设备封装:48-VFBGA(6x8) 包装:带卷 (TR)
IDT71V424L10YI 功能描述:IC SRAM 4MBIT 10NS 36SOJ RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:576 系列:- 格式 - 存储器:闪存 存储器类型:闪存 - NAND 存储容量:512M(64M x 8) 速度:- 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-TFSOP(0.724",18.40mm 宽) 供应商设备封装:48-TSOP 包装:托盘 其它名称:497-5040
IDT71V424L10YI8 功能描述:IC SRAM 4MBIT 10NS 36SOJ RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:576 系列:- 格式 - 存储器:闪存 存储器类型:闪存 - NAND 存储容量:512M(64M x 8) 速度:- 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-TFSOP(0.724",18.40mm 宽) 供应商设备封装:48-TSOP 包装:托盘 其它名称:497-5040