参数资料
型号: IDT71V424S12PHGI
厂商: IDT, Integrated Device Technology Inc
文件页数: 9/9页
文件大小: 0K
描述: IC SRAM 4MBIT 12NS 44TSOP
标准包装: 26
格式 - 存储器: RAM
存储器类型: SRAM - 异步
存储容量: 4M (512K x 8)
速度: 12ns
接口: 并联
电源电压: 3 V ~ 3.6 V
工作温度: -40°C ~ 85°C
封装/外壳: 44-TSOP(0.400",10.16mm 宽)
供应商设备封装: 44-TSOP II
包装: 管件
其它名称: 71V424S12PHGI
800-2463-5
IDT71V424S12PHGI-ND
IDT71V424S, IDT71V424L, 3.3V CMOS Static RAM
4 Meg (512K x 8-bit)
Datasheet Document History
Commercial and Industrial Temperature Ranges
8/13/99
Pg. 2
Pg. 7
Pg. 9
Updated to new format
Removed SO44-1 from TSOP pinout
Revised footnotes on Write Cycle No. 1 diagram
Removed footnote for t WR on Write Cycle No. 2 diagram
Added Datasheet Document History
8/31/99
11/22/02
07/31/03
07/28/04
09/20/08
05/12/09
06/11/09
09/26/13:
Pg. 1–9
Pg. 8
Pg. 8
Pg. 3
Pg. 8
Pg. 1, 8
Pg. 3,5,8
Pg.1,8
Pg.1-9
Pg.1
Pg.8
Added Industrial temperature range offerings
Added die revision option to ordering information
Updated note, L10 speed grade commercial temperature only and updated die stepping from YF to Y.
Increased ISB for all "L" and S15 speeds by 10mA and increased for S12 speed by 5mA (refer to
PCN# SR-0402-02).
Added "Restricted hazardous substance device" to the ordering information.
Added Y and V step part numbers to front page and ordering information. Updated the ordering
information by removing the “IDT” notation.
Add Industrial grade for 10ns Low Power.
Removed VS, VL from datasheet and ordering information.
Removed the /YS & /YL from the device name for the entire datasheet.
Removed IDT's reference to fabrication.
Updated ordering information by adding T&R, updated Restricted Hazardous Substance Device
wording to Green and removed the Die Stepping Revision, the”Y” designator.
CORPORATE HEADQUARTERS
6024 Silver Creek Valley Road
San Jose, CA 95138
for SALES:
800-345-7015 or
408-284-8200
for Tech Support:
ipchelp@idt.com
800-345-7015
fax: 408-284-2775
www.idt.com
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
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IDT71V424S12PHGI8 功能描述:IC SRAM 4MBIT 12NS 44TSOP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:72 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 存储容量:4.5M(256K x 18) 速度:133MHz 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:0°C ~ 70°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP(14x20) 包装:托盘
IDT71V424S12PHI 功能描述:IC SRAM 4MBIT 12NS 44TSOP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:576 系列:- 格式 - 存储器:闪存 存储器类型:闪存 - NAND 存储容量:512M(64M x 8) 速度:- 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-TFSOP(0.724",18.40mm 宽) 供应商设备封装:48-TSOP 包装:托盘 其它名称:497-5040
IDT71V424S12PHI8 功能描述:IC SRAM 4MBIT 12NS 44TSOP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:576 系列:- 格式 - 存储器:闪存 存储器类型:闪存 - NAND 存储容量:512M(64M x 8) 速度:- 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-TFSOP(0.724",18.40mm 宽) 供应商设备封装:48-TSOP 包装:托盘 其它名称:497-5040
IDT71V424S12Y 功能描述:IC SRAM 4MBIT 12NS 36SOJ RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:576 系列:- 格式 - 存储器:闪存 存储器类型:闪存 - NAND 存储容量:512M(64M x 8) 速度:- 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-TFSOP(0.724",18.40mm 宽) 供应商设备封装:48-TSOP 包装:托盘 其它名称:497-5040
IDT71V424S12Y8 功能描述:IC SRAM 4MBIT 12NS 36SOJ RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:576 系列:- 格式 - 存储器:闪存 存储器类型:闪存 - NAND 存储容量:512M(64M x 8) 速度:- 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-TFSOP(0.724",18.40mm 宽) 供应商设备封装:48-TSOP 包装:托盘 其它名称:497-5040