参数资料
型号: IDT71V67903S75BQG
厂商: IDT, Integrated Device Technology Inc
文件页数: 23/23页
文件大小: 0K
描述: IC SRAM 9MBIT 75NS 165FBGA
标准包装: 1
格式 - 存储器: RAM
存储器类型: SRAM - 同步
存储容量: 9M(512K x 18)
速度: 75ns
接口: 并联
电源电压: 3.135 V ~ 3.465 V
工作温度: 0°C ~ 70°C
封装/外壳: 165-TBGA
供应商设备封装: 165-CABGA(13x15)
包装: 托盘
IDT71V67703, IDT71V67903, 256K x 36, 512K x 18, 3.3V Synchronous SRAMS with
3.3V I/O, Flow-Through Outputs, Single Cycle Deselect Commercial and Industrial Temperature Ranges
Datasheet Document History
12/31/99
Created Datasheet from 71V677 and 71V679 Datasheets
For 2.5V I/O offering, see 71V67702 AND 71V67902 Datasheets.
04/26/00
05/24/00
07/12/00
12/18/00
10/29/01
10/22/02
04/15/03
12/20/03
02/20/09
Pg. 4
Pg. 7
Pg. 18
Pg. 1,4,8,21
22
Pg. 5,6,7,8
Pg. 20
Pg. 5,6,8
Pg. 7
Pg. 20
Pg. 9
Pg. 1,2
Pg. 7
Pg. 8
Pg. 9
Pg. 1-23
Pg. 4,9,12,
22
Pg. 4
Pg. 7
Pg. 22
Add capacitance for BGA package; Insert clarification note to Absolute Max Ratings and Recommended
Operating Temperature tables.
Replace Pin U6 with TRST pin in BGA pin configuration; Add pin description note in pinout
Inserted 100 pin TQFP Package Diagram Outline
Add new package offering, 13 x 15 fBGA
Correct note 2 on BGA and TQFP pin configuration
Correction in the 119 BGA Package Diagram Outline
Remove note from TQFP and BQ165 pinouts
Add/Remove note from BG119 pinout
Update BG 119 pinout
Updated ISB2 levels for 7.5-8.5ns.
Remove JTAG pins
Changed U2-U6 pins to DNU.
Changed P5,P7,R5 & R7 to DNU pins.
Raised specs by 10mA on 7.5ns, 8ns and 8.5ns.
Changed datasheet from Advanced to Final Release.
Added I temp to datasheet.
Updated 165 fBGA table from TBD to 7.
Updated 119BGS pin configurations- reordered I/O signals on P6, P7 (128K x 36) and P7, N6, L6, K7,
H6, G7, F6, E7, D6 (256K x 18).
Removed "IDT" from orderable part number.
CORPORATE HEADQUARTERS
2975 Stender Way
Santa Clara, CA 95054
for SALES:
800-345-7015 or 408-727-6116
fax: 408-492-8674
for Tech Support:
sramhelp@idt.com
800-544-7726
www.idt.com
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
23
6.42
相关PDF资料
PDF描述
IDT71V67903S85BQ IC SRAM 9MBIT 85NS 165FBGA
IDT71V67903S80BQ IC SRAM 9MBIT 80NS 165FBGA
IDT71V67903S75BQ IC SRAM 9MBIT 75NS 165FBGA
IDT71V67803S150BQ IC SRAM 9MBIT 150MHZ 165FBGA
IDT71V67803S133BQ IC SRAM 9MBIT 133MHZ 165FBGA
相关代理商/技术参数
参数描述
IDT71V67903S75BQGI 制造商:Integrated Device Technology Inc 功能描述:IC SRAM 9MBIT 7.5NS 165CABGA
IDT71V67903S75BQI 功能描述:IC SRAM 9MBIT 75NS 165FBGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:72 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 存储容量:9M(256K x 36) 速度:75ns 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:-40°C ~ 85°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP(14x14) 包装:托盘 其它名称:71V67703S75PFGI
IDT71V67903S75BQI8 功能描述:IC SRAM 9MBIT 75NS 165FBGA RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:72 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 同步 存储容量:9M(256K x 36) 速度:75ns 接口:并联 电源电压:3.135 V ~ 3.465 V 工作温度:-40°C ~ 85°C 封装/外壳:100-LQFP 供应商设备封装:100-TQFP(14x14) 包装:托盘 其它名称:71V67703S75PFGI
IDT71V67903S75PF 功能描述:IC SRAM 9MBIT 75NS 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:576 系列:- 格式 - 存储器:闪存 存储器类型:闪存 - NAND 存储容量:512M(64M x 8) 速度:- 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-TFSOP(0.724",18.40mm 宽) 供应商设备封装:48-TSOP 包装:托盘 其它名称:497-5040
IDT71V67903S75PF8 功能描述:IC SRAM 9MBIT 75NS 100TQFP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:576 系列:- 格式 - 存储器:闪存 存储器类型:闪存 - NAND 存储容量:512M(64M x 8) 速度:- 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-TFSOP(0.724",18.40mm 宽) 供应商设备封装:48-TSOP 包装:托盘 其它名称:497-5040