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参数资料
| 型号： | IDT7200L25SOI8 |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 2/14页 |
| 文件大小： | 0K |
| 描述： | IC MEM FIFO 256X9 25NS 28-SOIC |
| 标准包装： | 1,000 |
| 系列： | 7200 |
| 功能： | 异步 |
| 存储容量： | 2.3K（256 x 9） |
| 数据速率： | 28.5MHz |
| 访问时间： | 25ns |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 28-SOIC（0.345"，8.77mm 宽） |
| 供应商设备封装： | 28-SOIC |
| 包装： | 带卷 (TR) |
| 其它名称： | 7200L25SOI8 |
10
COMMERCIAL,INDUSTRIALANDMILITARY
TEMPERATURERANGES
IDT7201L/7201LA/7202LA CMOS ASYNCHRONOUS FIFO
256 x 9, 512 x 9 and 1,024 x 9
USAGE MODES:
WIDTH EXPANSION
Word width may be increased simply by connecting the corresponding
inputcontrolsignalsofmultipledevices. Statusflags(EF,FFandHF)canbe
detectedfromanyonedevice. Figure13demonstratesan18-bitwordwidth
by using two IDT7200/7201A/7202As. Any word width can be attained by
adding additional IDT7200/7201A/7202As (Figure 13).
BIDIRECTIONAL OPERATION
Applications which require data buffering between two systems (each
system capable of Read and Write operations) can be achieved by pairing
IDT7200/7201A/7202As as shown in Figure 16. Both Depth Expansion and
Width Expansion may be used in this mode.
DATA FLOW-THROUGH
Two types of flow-through modes are permitted, a read flow-through
and write flow-through mode. For the read flow-through mode (Figure 17),
theFIFOpermitsareadingofasinglewordafterwritingonewordofdatainto
anemptyFIFO. Thedataisenabledonthebusin(tWEF+tA)nsaftertherising
edgeofW,calledthefirstwriteedge,anditremainsonthebusuntiltheRline
is raised from LOW-to-HIGH, after which the bus would go into a three-state
mode after tRHZ ns. The EF line would have a pulse showing temporary
deassertion and then would be asserted.
In the write flow-through mode (Figure 18), the FIFO permits the writing
of a single word of data immediately after reading one word of data from a
fullFIFO. TheRlinecausestheFFtobedeassertedbuttheWlinebeingLOW
causesittobeassertedagaininanticipationofanewdataword. Ontherising
edge of W, the new word is loaded in the FIFO. The W line must be toggled
whenFFisnotassertedtowritenewdataintheFIFOandtoincrementthewrite
pointer.
COMPOUND EXPANSION
The two expansion techniques described above can be applied together
in a straightforward manner to achieve large FIFO arrays (see Figure 15).
Figure 13. Block Diagram of 256 x 18, 512 x 18, 1,024 x 18 FIFO Memory Used in Width Expansion Mode
Figure 12. Block Diagram of Single 256 x 9, 512 x 9, 1,024 x 9 FIFO
WRITE (
W)
DATA IN (D)
FULL FLAG (
FF)
RESET (
RS)
9
READ (
R)
9
DATA OUT (Q)
EMPTY FLAG (
EF)
RETRANSMIT (
RT)
EXPANSION IN (
XI)
(
HF)
IDT
7200/
7201A/
7202A
(HALF-FULL FLAG)
2679 drw 14
IDT
7200/
7201A/
7202A
XI
99
18
9
18
HF
9
DATA
WRITE (
W)
FULL FLAG (
FF)
RESET (
RS)
(D)
IN
READ (
R)
EMPTY FLAG (
EF)
RETRANSMIT (
RT)
DATA OUT (Q)
IDT
7200/
7201A/
7202A
2679 drw 15
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| IDT7200L25TP | 功能描述:IC MEM FIFO 256X9 25NS 28-PDIP RoHS:否 类别:集成电路 (IC) >> 逻辑 - FIFO 系列:7200 标准包装:80 系列:7200 功能:同步 存储容量:18.4K（1K x 18） 数据速率:- 访问时间:10ns 电源电压:4.5 V ~ 5.5 V 工作温度:0°C ~ 70°C 安装类型:表面贴装 封装/外壳:64-LQFP 供应商设备封装:64-TQFP（10x10） 包装:托盘 其它名称:72225LB10TF |
| IDT7200L25TPI | 功能描述:IC MEM FIFO 256X9 25NS 28-PDIP RoHS:否 类别:集成电路 (IC) >> 逻辑 - FIFO 系列:7200 标准包装:80 系列:7200 功能:同步 存储容量:18.4K（1K x 18） 数据速率:- 访问时间:10ns 电源电压:4.5 V ~ 5.5 V 工作温度:0°C ~ 70°C 安装类型:表面贴装 封装/外壳:64-LQFP 供应商设备封装:64-TQFP（10x10） 包装:托盘 其它名称:72225LB10TF |
| IDT7200L30TDB | 制造商:Integrated Device Technology Inc 功能描述:IC MEM FIFO 256X9 ASYNC 28CDIP |
| IDT7200L35J | 功能描述:IC MEM FIFO 256X9 35NS 32-PLCC RoHS:否 类别:集成电路 (IC) >> 逻辑 - FIFO 系列:7200 标准包装:80 系列:7200 功能:同步 存储容量:18.4K（1K x 18） 数据速率:- 访问时间:10ns 电源电压:4.5 V ~ 5.5 V 工作温度:0°C ~ 70°C 安装类型:表面贴装 封装/外壳:64-LQFP 供应商设备封装:64-TQFP（10x10） 包装:托盘 其它名称:72225LB10TF |
| IDT7200L35J8 | 功能描述:IC MEM FIFO 256X9 35NS 32-PLCC RoHS:否 类别:集成电路 (IC) >> 逻辑 - FIFO 系列:7200 标准包装:80 系列:7200 功能:同步 存储容量:18.4K（1K x 18） 数据速率:- 访问时间:10ns 电源电压:4.5 V ~ 5.5 V 工作温度:0°C ~ 70°C 安装类型:表面贴装 封装/外壳:64-LQFP 供应商设备封装:64-TQFP（10x10） 包装:托盘 其它名称:72225LB10TF |
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