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参数资料
| 型号： | IDT7201LA50TP |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 2/14页 |
| 文件大小： | 0K |
| 描述： | IC MEM FIFO 512X9 50NS 28-PDIP |
| 标准包装： | 14 |
| 系列： | 7200 |
| 功能： | 异步 |
| 存储容量： | 4.6K（512 x 9） |
| 数据速率： | 15MHz |
| 访问时间： | 50ns |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | 0°C ~ 70°C |
| 安装类型： | 通孔 |
| 封装/外壳： | 28-DIP（0.300"，7.62mm） |
| 供应商设备封装： | 28-PDIP |
| 包装： | 管件 |
| 其它名称： | 7201LA50TP |
10
COMMERCIAL,INDUSTRIALANDMILITARY
TEMPERATURERANGES
IDT7201L/7201LA/7202LA CMOS ASYNCHRONOUS FIFO
256 x 9, 512 x 9 and 1,024 x 9
USAGE MODES:
WIDTH EXPANSION
Word width may be increased simply by connecting the corresponding
inputcontrolsignalsofmultipledevices. Statusflags(EF,FFandHF)canbe
detectedfromanyonedevice. Figure13demonstratesan18-bitwordwidth
by using two IDT7200/7201A/7202As. Any word width can be attained by
adding additional IDT7200/7201A/7202As (Figure 13).
BIDIRECTIONAL OPERATION
Applications which require data buffering between two systems (each
system capable of Read and Write operations) can be achieved by pairing
IDT7200/7201A/7202As as shown in Figure 16. Both Depth Expansion and
Width Expansion may be used in this mode.
DATA FLOW-THROUGH
Two types of flow-through modes are permitted, a read flow-through
and write flow-through mode. For the read flow-through mode (Figure 17),
theFIFOpermitsareadingofasinglewordafterwritingonewordofdatainto
anemptyFIFO. Thedataisenabledonthebusin(tWEF+tA)nsaftertherising
edgeofW,calledthefirstwriteedge,anditremainsonthebusuntiltheRline
is raised from LOW-to-HIGH, after which the bus would go into a three-state
mode after tRHZ ns. The EF line would have a pulse showing temporary
deassertion and then would be asserted.
In the write flow-through mode (Figure 18), the FIFO permits the writing
of a single word of data immediately after reading one word of data from a
fullFIFO. TheRlinecausestheFFtobedeassertedbuttheWlinebeingLOW
causesittobeassertedagaininanticipationofanewdataword. Ontherising
edge of W, the new word is loaded in the FIFO. The W line must be toggled
whenFFisnotassertedtowritenewdataintheFIFOandtoincrementthewrite
pointer.
COMPOUND EXPANSION
The two expansion techniques described above can be applied together
in a straightforward manner to achieve large FIFO arrays (see Figure 15).
Figure 13. Block Diagram of 256 x 18, 512 x 18, 1,024 x 18 FIFO Memory Used in Width Expansion Mode
Figure 12. Block Diagram of Single 256 x 9, 512 x 9, 1,024 x 9 FIFO
WRITE (
W)
DATA IN (D)
FULL FLAG (
FF)
RESET (
RS)
9
READ (
R)
9
DATA OUT (Q)
EMPTY FLAG (
EF)
RETRANSMIT (
RT)
EXPANSION IN (
XI)
(
HF)
IDT
7200/
7201A/
7202A
(HALF-FULL FLAG)
2679 drw 14
IDT
7200/
7201A/
7202A
XI
99
18
9
18
HF
9
DATA
WRITE (
W)
FULL FLAG (
FF)
RESET (
RS)
(D)
IN
READ (
R)
EMPTY FLAG (
EF)
RETRANSMIT (
RT)
DATA OUT (Q)
IDT
7200/
7201A/
7202A
2679 drw 15
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IDT7201LA80DB | 制造商:Integrated Device Technology Inc 功能描述:IC MEM FIFO 512X9 ASYNC 28CDIP 制造商:Integrated Device Technology Inc 功能描述:FIFO, 512 x 9, Asynchronous, 28 Pin, Ceramic, DIP |
| IDT7201LA80J | 制造商:Integrated Device Technology Inc 功能描述:FIFO, 512 x 9, Asynchronous, 32 Pin, Plastic, PLCC |
| IDT7201LA80TDB | 制造商:Integrated Device Technology Inc 功能描述: 制造商:Integrated Device Technology Inc 功能描述:IC MEM FIFO 512X9 ASYNC 28CDIP 制造商:Integrated Device Technology Inc 功能描述:FIFO, 512 x 9, Asynchronous, 28 Pin, Ceramic, DIP |
| IDT7201S120CB | 制造商:Integrated Device Technology Inc 功能描述:FIFO, 512 x 9, Asynchronous, 28 Pin, Ceramic, DIP |
| IDT7201S120D | 制造商:Integrated Device Technology Inc 功能描述:FIFO, 512 x 9, Asynchronous, 28 Pin, Ceramic, DIP |
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