参数资料
型号: IDT7203L35J8
厂商: IDT, Integrated Device Technology Inc
文件页数: 7/14页
文件大小: 0K
描述: IC MEM FIFO 2048X9 35NS 32-PLCC
标准包装: 750
系列: 7200
功能: 异步
存储容量: 18.4K(2K x 9)
数据速率: 22.2MHz
访问时间: 35ns
电源电压: 4.5 V ~ 5.5 V
工作温度: 0°C ~ 70°C
安装类型: 表面贴装
封装/外壳: 32-LCC(J 形引线)
供应商设备封装: 32-PLCC(13.97x11.43)
包装: 带卷 (TR)
其它名称: 7203L35J8
2
COMMERCIAL,INDUSTRIALANDMILITARY
TEMPERATURERANGES
IDT7203/7204/7205/7206/7207/7208 CMOS ASYNCHRONOUS FIFO
2,048 x 9, 4,096 x 9, 8,192 x 9, 16,384 x 9, 32,768 x 9 and 65,536 x 9
PIN CONFIGURATIONS
Symbol
Rating
Com'l & Ind'l
Military
Unit
VTERM
Terminal
–0.5 to +7.0
V
Voltagewith
Respect to GND
TSTG
Storage
–55 to + 125
–65to+155
°C
Temperature
IOUT
DCOutput
–50to+50
mA
+Current
Reference
Order
Device
PackageType
Identifier
Code
Availability
PLASTIC DIP
P28-1
P
All devices
PLASTIC THIN DIP
P28-2
T P
AllexceptIDT7207/7208
CERDIP
D28-1
D
All except IDT7208
THIN CERDIP
D28-3
TD
OnlyforIDT7203/7204/7205
SOIC
SO28-3
SO
Only for IDT7204
Reference
Order
Device
PackageType
Identifier
Code
Availability
PLCC
J32-1
J
All devices
LCC(1)
L32-1
L
All except IDT7208
TOP VIEW
NOTE:
1. This package is only available in the military temperature range.
NOTES:
1. For RT/RS/XI input, VIH = 2.6V (commercial).
For RT/RS/XI input, VIH = 2.6V (military).
2. 1.5V undershoots are allowed for 10ns once per cycle.
5
6
7
8
9
10
11
12
13
FF
XI
GND
1
2
3
4
14
28
27
26
25
24
23
22
21
EF
XO/HF
Vcc
FL/RT
RS
20
19
18
17
16
15
W
D4
Q7
R
2661 drw02a
D5
D7
D6
Q6
Q5
Q4
Q8
Q3
Q2
Q1
Q0
D8
D3
D2
D1
D0
5
6
7
8
9
10
11
12
13
FF
XI
Q0
29
28
27
26
25
24
23
22
21
EF
XO/HF
D6
NC
FL/RT
RS
14
15
16
17
18
19
20
4
3
2
1
32
31
30
INDEX
NC
W NC Vcc
GND
NC
R
2661 drw02b
D7
D
4
D
5
D
8
D
3
D2
D1
D0
Q1
Q2
Q7
Q6
Q
4
Q
5
Q
8
Q
3
ABSOLUTE MAXIMUM RATINGS
NOTE:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
RECOMMENDED DC OPERATING
CONDITIONS
Symbol
Parameter
Min.
Typ.
Max. Unit
VCC
SupplyVoltage
4.5
5.0
5.5
V
Commercial/Industrial/Military
GND
SupplyVoltage
0
V
VIH(1)
InputHighVoltage
2.0
V
Commercial/Industrial
VIH(1)
Input High Voltage Military
2.2
V
VIL(2)
InputLowVoltage
0.8
V
Commercial/Industrial/Military
TA
OperatingTemperatureCommercial
0
70
°C
TA
OperatingTemperatureIndustrial
–40
85
°C
TA
OperatingTemperatureMilitary
–55
125
°C
相关PDF资料
PDF描述
IDT7200L20J8 IC MEM FIFO 256X9 20NS 32-PLCC
LT1791CS IC TXRX RS485/RS422 60V 14-SOIC
VE-243-IU-F1 CONVERTER MOD DC/DC 24V 200W
IDT7201LA50SO8 IC MEM FIFO 512X9 50NS 28-SOIC
LTC2804CDHC#TRPBF IC TXRX RS232 DUAL 16-DFN
相关代理商/技术参数
参数描述
IDT7203L35P 功能描述:IC MEM FIFO 2048X9 35NS 28-DIP RoHS:否 类别:集成电路 (IC) >> 逻辑 - FIFO 系列:7200 标准包装:80 系列:7200 功能:同步 存储容量:18.4K(1K x 18) 数据速率:- 访问时间:10ns 电源电压:4.5 V ~ 5.5 V 工作温度:0°C ~ 70°C 安装类型:表面贴装 封装/外壳:64-LQFP 供应商设备封装:64-TQFP(10x10) 包装:托盘 其它名称:72225LB10TF
IDT7203L35TP 功能描述:IC MEM FIFO 2048X9 35NS 28-DIP RoHS:否 类别:集成电路 (IC) >> 逻辑 - FIFO 系列:7200 标准包装:80 系列:7200 功能:同步 存储容量:18.4K(1K x 18) 数据速率:- 访问时间:10ns 电源电压:4.5 V ~ 5.5 V 工作温度:0°C ~ 70°C 安装类型:表面贴装 封装/外壳:64-LQFP 供应商设备封装:64-TQFP(10x10) 包装:托盘 其它名称:72225LB10TF
IDT7203L40DB 制造商:Integrated Device Technology Inc 功能描述:IC MEM FIFO 2048X9 20NS 28CDIP
IDT7203L40LB 制造商:Integrated Device Technology Inc 功能描述:IC MEM FIFO 2048X9 40NS 32LCC
IDT7203L40LB8 制造商:Integrated Device Technology Inc 功能描述:IC MEM FIFO 2048X9 40NS 32LCC