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参数资料
| 型号： | IDTTSE2002B3CNRG |
| 厂商： | IDT, Integrated Device Technology Inc |
| 文件页数： | 17/30页 |
| 文件大小： | 423K |
| 描述： | IC TEMP SENS EEPROM DFN-8 |
| 标准包装： | 120 |
| 功能： | 温度监控系统（传感器） |
| 传感器类型： | 内部 |
| 感应温度： | -20°C ~ 125°C |
| 精确度： | ±1°C（最小值） |
| 拓扑： | ADC（三角积分型），控制逻辑，寄存器库 |
| 输出类型： | 2 线串行，I²C?/SMBUS? |
| 输出警报： | 无 |
| 输出风扇： | 无 |
| 电源电压： | 3 V ~ 3.6 V |
| 工作温度： | -20°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-VFDFN 裸露焊盘 |
| 供应商设备封装： | 8-VFQFPN（2x3） |
| 包装： | 管件 |
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May 12, 2010
IDT Confidential
Write Mode Sequences in a Non-Write Protected Area
Byte Write
After the Device Select Code and the address byte, the bus master sends one data byte. If the addressed location is write-protected, the device
replies to the data byte with NoAck, and the location is not modified. If, instead, the addressed location is not Write-protected, the device replies with
Ack. The bus master terminates the transfer by generating a Stop condition, as shown in the Write Mode Sequence in a Non-Write Protected Area
figure above.
Page Write
The Page Write mode allows up to 16 bytes to be written in a single Write cycle, provided that they are all located in the same page in the memory:
that is, the most significant memory address bits are the same. If more bytes are sent than will fit up to the end of the page, a condition known as
roll-over occurs. This should be avoided, as data starts to be over-written in an implementation dependent fashion.
The bus master sends from 1 to 16 bytes of data, each of which is acknowledged by the device. If the addressed location is write-protected, the
device replies to the data byte with NoAck, and the locations are not modified. After each byte is transferred, the internal byte address counter is incre-
mented. The transfer is terminated by the bus master generating a Stop condition.
Write Cycle Polling Using ACK
During the internal Write cycle, the device disconnects itself from the bus, and writes a copy of the data from its internal latches to the memory
cells. The maximum Write time (t
W)
is shown in the AC Characteristic for TSE2002B3C table, but the typical time is shorter. To make use of this, a
polling sequence can be used by the bus master.
The polling sequence is shown in the following figure:
" Initial condition: a Write cycle is in progress.
" Step 1: the bus master issues a Start condition followed by a Device Select Code (the first byte of the new instruction).
" Step 2: if the device is busy with the internal Write cycle, no Ack will be returned and the bus master goes back to Step 1. If the device has
terminated the internal Write cycle, it responds with an Ack, indicating that the device is ready to receive the second part of the instruction (the
first byte of this instruction having been sent during Step 1).
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| IR2171STR | IC CURRENT SENSE 8SOIC |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IDTTSE2002B3CNRG8 | 功能描述:IC TEMP SENS EEPROM DFN-8 RoHS:是 类别:集成电路 (IC) >> PMIC - 热管理 系列:- 标准包装:3,000 系列:- 功能:温度开关 传感器类型:内部 感应温度:85°C 分界点 精确度:±6°C（最小值） 拓扑:ADC（三角积分型），比较器，寄存器库 输出类型:开路漏极 输出警报:是 输出风扇:是 电源电压:2.7 V ~ 5.5 V 工作温度:-55°C ~ 125°C 安装类型:表面贴装 封装/外壳:SC-74A，SOT-753 供应商设备封装:SOT-23-5 包装:带卷 (TR) 其它名称:ADT6501SRJZP085RL7-ND |
| IDTTSE2002GB2A1NCG | 制造商:Integrated Device Technology Inc 功能描述:IC TEMP SENS EEPROM DFN-8 |
| IDTTSE2002GB2A1NCG8 | 制造商:Integrated Device Technology Inc 功能描述:IC TEMP SENS EEPROM DFN-8 |
| IDTTSE2002GB2A1NRG | 制造商:Integrated Device Technology Inc 功能描述:IC TEMP SENS EEPROM DFN-8 |
| IDTTSE2002GB2A1NRG8 | 制造商:Integrated Device Technology Inc 功能描述:IC TEMP SENS EEPROM DFN-8 |
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