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参数资料
| 型号： | IDW100E60 |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Fast Switching EmCon Diode |
| 中文描述： | 快速开关快恢复二极管 |
| 文件页数： | 2/6页 |
| 文件大小： | 168K |
| 代理商： | IDW100E60 |
IDW100E60
Power Semiconductors
2
Rev. 1.1 Mar 06
Thermal Resistance
Parameter
Symbol
Conditions
Max. Value
Unit
Characteristic
Thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Electrical Characteristic,
at
T
j
= 25
°
C, unless otherwise specified
R
thJC
0.40
R
thJA
40
K/W
Value
typ.
Parameter
Symbol
Conditions
min.
max.
Unit
Static Characteristic
Collector-emitter breakdown voltage
Diode forward voltage
V
RRM
V
F
I
R
=0.25mA
600
-
-
-
-
I
F
=100A
T
j
=25
°
C
T
j
=175
°
C
V
R
=600V
T
j
=25
°
C
T
j
=175
°
C
1.65
1.65
2.0
-
V
Reverse leakage current
I
R
-
-
-
-
40
1000
μ
A
Dynamic Electrical Characteristics
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during
t
b
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during
t
b
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during
t
b
t
rr
Q
rr
I
rr
dI
rr
/dt
-
-
-
-
120
3.6
49.5
750
-
-
-
-
ns
μC
A
A/μs
T
j
=25
°
C
V
R
=400V,
I
F
=100A,
dI
F
/dt
=1200A/μs
t
rr
Q
rrm
I
rr
dI
rr
/dt
-
-
-
-
168
5.8
61.6
705
-
-
-
-
ns
μC
A
A/μs
T
j
=125
°
C
V
R
=400V,
I
F
=100A,
dI
F
/dt
=1200A/μs
t
rr
Q
rrm
I
rr
dI
rr
/dt
-
-
-
-
200
7.8
67.0
650
-
-
-
-
ns
μC
A
A/μs
T
j
=175
°
C
V
R
=400V,
I
F
=100A,
dI
F
/dt
=1200A/μs
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IDW100E60_09 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:Fast Switching EmCon Diode |
| IDW100E60FKSA1 | 制造商:Infineon Technologies AG 功能描述:Diode Switching 600V 150A 3-Pin(3+Tab) TO-247 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:DIODE SWITCH 600V 150A TO247-3 |
| IDW10G65C5 | 制造商:Infineon Technologies AG 功能描述:DIODE SCHOTTKY 650V 10A TO247-3 |
| IDW10G65C5_12 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:ThinQ!a?￠ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. |
| IDW10G65C5FKSA1 | 功能描述:肖特基二极管与整流器 SIC DIODES RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
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