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参数资料
| 型号： | IGB50N60T |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | LOW LOSS IGBT IN TRENCH AND FIELDSTOP TECHNOLOGY |
| 中文描述： | 低损耗IGBT的在战壕和场终止技术 |
| 文件页数： | 2/13页 |
| 文件大小： | 402K |
| 代理商： | IGB50N60T |
Thermal Resistance
IGP50N60T, IGB50N60T
TrenchStop Series
IGW50N60T
Power Semiconductors
2
Rev. 2.2 Dec-04
Parameter
Symbol
Conditions
Max. Value
Unit
Characteristic
IGBT thermal resistance,
junction – case
Thermal resistance,
junction – ambient
R
thJC
0.45
R
thJA
TO-220-3-1
TO-247-3-1
TO-263-3-2 (6cm2 Cu)
62
40
40
K/W
Electrical Characteristic,
at
T
j
= 25
°
C, unless otherwise specified
Value
Typ.
Parameter
Symbol
Conditions
min.
max.
Unit
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
V
(BR)CES
V
CE(sat)
V
GE
=0V,
I
C
=0.2mA
V
GE
= 15V,
I
C
=50A
T
j
=25
°
C
T
j
=175
°
C
I
C
=0.8mA,
V
CE
=
V
GE
V
CE
=600V
,
V
GE
=0V
T
j
=25
°
C
T
j
=175
°
C
600
-
-
-
-
1.5
1.9
2.0
-
Gate-emitter threshold voltage
Zero gate voltage collector current
V
GE(th)
I
CES
4.1
-
-
-
-
4.9
-
-
-
31
-
5.7
40
1000
100
-
V
μA
Gate-emitter leakage current
Transconductance
Integrated gate resistor
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
I
GES
g
fs
R
Gint
V
CE
=0V,
V
GE
=20V
V
CE
=20V,
I
C
=50A
nA
S
C
iss
C
oss
C
rss
Q
Gate
-
-
-
-
3140
200
93
310
-
-
-
-
V
CE
=25V,
V
GE
=0V,
f
=1MHz
pF
V
CC
=480V,
I
C
=50A
V
GE
=15V
TO-247-3-1
nC
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current
1)
L
E
-
7
-
nH
I
C(SC)
V
GE
=15V,
t
SC
≤
5
μ
s
V
CC
= 400V,
T
j
≤
150
°
C
-
458.3
-
A
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
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