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参数资料
| 型号： | IHW30N100T |
| 厂商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with anti-parallel diode |
| 中文描述： | 低损耗DuoPack：IGBT的在TrenchStop和场终止技术与反并联二极管 |
| 文件页数： | 1/12页 |
| 文件大小： | 360K |
| 代理商： | IHW30N100T |
Soft Switching Series
IHW30N100T
q
Power Semiconductors
1
Rev. 2.4 May 06
Low Loss DuoPack : IGBT in TrenchStop and Fieldstop
technology
with anti-parallel diode
Features:
1.1V Forward voltage of antiparallel rectifier diode
Specified for
T
Jmax
= 175°C
TrenchStop and Fieldstop technology for 1000 V applications
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- easy parallel switching capability due to positive
temperature coefficient in
V
CE(sat)
Low EMI
Qualified according to JEDEC
1
for target applications
Application specific optimisation of inverse diode
Pb-free lead plating; RoHS compliant
Applications:
Microwave Oven
Soft Switching Applications
Type
V
CE
I
C
V
CE(sat
),Tj=25°C
T
j,max
Marking
Package
IHW30N100T
1000V
30A
1.55V
175
°
C
H30T100
PG-TO-247-3-21
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
DC collector current
T
C
= 25
°
C
T
C
= 100
°
C
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area
V
CE
≤
1200V,
T
j
≤
150
°
C
Diode forward current
T
C
= 25
°
C
T
C
= 100
°
C
Diode pulsed current,
t
p
limited by
T
jmax
Gate-emitter voltage
Transient Gate-emitter voltage (
t
p
< 5 ms)
V
CE
I
C
1000
60
30
V
A
I
Cpuls
-
90
90
I
F
22
12
I
Fpuls
V
GE
36
±
20
±
25
412
V
Power dissipation,
T
C
= 25
°
C
Operating junction temperature
P
tot
T
j
T
stg
-
W
-40...+175
°
C
°
C
Storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
-55...+175
260
1
J-STD-020 and JESD-022
G
C
E
PG-TO-247-3-21
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IHW30N100T_08 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:Soft Switching Series |
| IHW30N100TFKSA1 | 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 1KV 60A 3-Pin(3+Tab) TO-247 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 1000V 60A 412W TO247-3 |
| IHW30N110R3 | 功能描述:IGBT 晶体管 IGBT PRODUCTS RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| IHW30N110R3FKSA1 | 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 1.1KV 60A 3-Pin(3+Tab) TO-247 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT 1100V 30A 330W TO247-3 |
| IHW30N120R | 功能描述:IGBT 晶体管 REVERSE CONDUCT IGBT 1200V 30A RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
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