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参数资料
| 型号： | IL1205AT |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 光电耦合器 |
| 英文描述： | 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER |
| 封装： | ROHS COMPLIANT, SOIC-8 |
| 文件页数： | 2/9页 |
| 文件大小： | 141K |
| 代理商： | IL1205AT |
www.vishay.com
For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 83549
302
Rev. 1.7, 08-May-08
IL1205AT/1206AT/1207AT/1208AT
Vishay Semiconductors Optocoupler, Phototransistor Output,
with Base Connection in SOIC-8
Package, 110 °C Rated
Notes
(1) Tamb = 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
(2) Refer to reflow profile for soldering conditions for surface mounted devices (SOP/SOIC).
Fig. 1 - Input Power Dissipation (LED) vs. Ambient Temperature
Fig. 2 - Output Power Dissipation vs. Ambient Temperature
Note
Tamb = 25 °C, unless otherwise specified.
Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
COUPLER
Isolation test voltage
VISO
4000
VRMS
Operating temperature
Tamb
- 55 to + 110
°C
Total package dissipation (LED and detector)
Ptot
240
mW
Storage temperature
Tstg
- 55 to + 150
°C
Soldering temperature (2)
max. 10 s, dip soldering distance
to seating plane
≥ 1.5 mm
Tsld
260
°C
Derate linearly from 25 °C
2.4
mW/°C
ABSOLUTE MAXIMUM RATINGS (1)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
010 20 30 4050 60 70 80 90 100 110 120
0
10
20
30
40
50
60
70
80
90
100
Tamb (°C)
LED
P
o
w
er
P
diss
(m
W
)
0 10 20 30 40 50 60 70 80 90 100110 120
0
10
20
30
40
50
60
70
80
90
100
Tamb (°C)
O
u
tp
u
tP
o
w
er
P
diss
(m
W
)
110
120
130
140
150
160
ELECTRICAL CHARACTERISTCS
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage
IF = 10 mA
VF
1.3
1.5
V
Reverse current
VR = 6 V
IR
0.1
100
A
Capacitance
VR = 0 V
CI
13
pF
OUTPUT
Collector emitter leakage current
VCE = 10 V
ICEO
5.0
50
nA
Collector emitter breakdown voltage
IC = 100 A
BVCEO
70
V
Emitter collector breakdown voltage
IE = 100 A
BVECO
7.0
10
V
Collector base breakdown current
BVCBO
70
V
Saturation voltage, collector emitter
IC = 2 mA, IF = 10 mA
VCEsat
0.4
V
COUPLER
DC current transfer ratio
IF = 10 mA, VCE = 5.0 V
IL1205AT
CTR
40
80
%
IL1206AT
CTR
63
125
%
IL1207AT
CTR
100
200
%
IL1208AT
CTR
100
320
%
IF = 1.0 mA, VCE = 5.0 V
IL1205AT
CTR
13
25
%
IL1206AT
CTR
22
40
%
IL1207AT
CTR
34
60
%
IL1208AT
CTR
56
95
%
Capacitance (input to output)
CIO
0.5
pF
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| IL1207AT | 功能描述:晶体管输出光电耦合器 Phototransistor Out CTR 100-200% RoHS:否 制造商:Vishay Semiconductors 输入类型:DC 最大集电极/发射极电压:70 V 最大集电极/发射极饱和电压:0.4 V 绝缘电压:5300 Vrms 电流传递比:100 % to 200 % 最大正向二极管电压:1.65 V 最大输入二极管电流:60 mA 最大集电极电流:100 mA 最大功率耗散:100 mW 最大工作温度:+ 110 C 最小工作温度:- 55 C 封装 / 箱体:DIP-4 封装:Bulk |
| IL1208AT | 功能描述:晶体管输出光电耦合器 Phototransistor Out CTR 160-320% RoHS:否 制造商:Vishay Semiconductors 输入类型:DC 最大集电极/发射极电压:70 V 最大集电极/发射极饱和电压:0.4 V 绝缘电压:5300 Vrms 电流传递比:100 % to 200 % 最大正向二极管电压:1.65 V 最大输入二极管电流:60 mA 最大集电极电流:100 mA 最大功率耗散:100 mW 最大工作温度:+ 110 C 最小工作温度:- 55 C 封装 / 箱体:DIP-4 封装:Bulk |
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