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参数资料
| 型号： | IL1 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 光电耦合器 |
| 英文描述： | 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER |
| 封装： | ROHS COMPLIANT, DIP-6 |
| 文件页数： | 2/9页 |
| 文件大小： | 125K |
| 代理商： | IL1 |
Document Number: 83612
For technical questions, contact: optocoupler.answers@vishay.com
www.vishay.com
Rev. 1.6, 10-Dec-08
295
IL1, IL2, IL5
Optocoupler, Phototransistor
Output, with Base Connection
Vishay Semiconductors
Notes
(1) Tamb = 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
(2) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
Note
Tamb = 25 °C, unless otherwise specified.
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
COUPLER
Package power dissipation
Ptot
250
mW
Derate linearly from 25 °C
3.3
mW/°C
Isolation test voltage
between emitter and detector
VISO
5300
VRMS
Creepage distance
≥ 7mm
Clearance distance
≥ 7mm
Comparative tracking index per
DIN IEC 112/VDE 0303, part 1
CTI
175
Isolation resistance
VIO = 500 V, Tamb = 25 °C
RIO
≥ 1012
Ω
VIO = 500 V, Tamb = 100 °C
RIO
≥ 1011
Ω
Storage temperature
Tstg
- 40 to + 150
°C
Operating temperature
Tamb
- 40 to + 100
°C
Junction temperature
Tj
100
°C
Soldering temperature (2)
2.0 mm from case bottom
Tsld
260
°C
ABSOLUTE MAXIMUM RATINGS (1)
PARAMETER
TEST CONDITION
PART
SYMBOL
VALUE
UNIT
ELECTRICAL CHARACTERISTICS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage
IF = 60 mA
VF
1.25
1.65
V
Breakdown voltage
IR = 10 A
VBR
630
V
Reverse current
VR = 6.0 V
IR
0.01
10
A
Capacitance
VR = 0 V, f = 1.0 MHz
CO
40
pF
Thermal resistance junction to lead
Rthjl
750
K/W
OUTPUT
Collector emitter capacitance
VCE = 5.0 V, f = 1.0 MHz
CCE
6.8
pF
Collector base capacitance
VCB = 5.0 V, f = 1.0 MHz
CCB
8.5
pF
Emitter base capacitance
VEB = 5.0 V, f = 1.0 MHz
CEB
11
pF
Collector emitter leakage voltage
VCE = 10 V
ICEO
550
nA
Collector emitter saturation voltage
ICE = 1.0 mA, IB = 20 A
VCEsat
0.25
V
Base emitter voltage
VCE = 10 V, IB = 20 A
VBE
0.65
V
DC forward current gain
VCE = 10 V, IB = 20 A
hFE
200
650
1800
DC forward current gain saturated
VCE = 0.4 V, IB = 20 A
hFEsat
120
400
600
Thermal resistance junction to lead
Rthjl
500
K/W
COUPLER
Capacitance (input to output)
VI-O = 0 V, f = 1.0 MHz
CIO
0.6
pF
Insulation resistance
VI-O = 500 V
RS
1014
Ω
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