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Document Number: 83614
314
Rev. 1.9, 08-May-08
IL205AT/206AT/207AT/208AT
Vishay Semiconductors
Optocoupler, Phototransistor Output,
with Base Connection in SOIC-8 Package
Note
Tamb = 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied
at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for
extended periods of the time can adversely affect reliability.
Note
Tamb = 25 °C, unless otherwise specified.
Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
INPUT
Peak reverse voltage
VR
6V
Forward continuous current
IF
60
mA
Power dissipation
Pdiss
90
mW
Derate linearly from 25 °C
1.2
mW/°C
OUTPUT
Collector emitter breakdown voltage
BVCEO
70
V
Emitter collector breakdown voltage
BVECO
7V
Collector-base breakdown voltage
BVCBO
70
V
ICMAX DC
50
mA
ICMAX
t < 1 ms
ICMAX
100
mA
Power dissipation
Pdiss
150
mW
Derate linearly from 25 °C
2mW/°C
COUPLER
Isolation test voltage
VISO
4000
VRMS
Total package dissipation (LED and detector)
Ptot
240
mW
Derate linearly from 25 °C
3.3
mW/°C
Operating temperature
Tamb
- 55 to + 100
°C
Storage temperature
Tstg
- 55 to + 150
°C
Soldering time
at 260 °C
10
s
ELECTRICAL CHARACTERISTCS
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage
IF = 10 mA
VF
1.3
1.5
V
Reverse current
VR = 6 V
IR
0.1
100
A
Capacitance
VR = 0 V
CO
13
pF
OUTPUT
Collector emitter breakdown voltage
IC = 100 A
BVCEO
70
V
Emitter collector breakdown voltage
IE = 100 A
BVECO
710
V
Collector emitter leakage current
VCE = 10 V
ICEO
550
nA
COUPLER
Saturation voltage, collector emitter
IC = 2 mA, IF = 10 mA
VCEsat
0.4
V
Capacitance, input to output
CIO
0.5
pF
Resistance, input to output
RIO
100
G
Ω