参数资料
型号: IL223A
厂商: VISHAY INTERTECHNOLOGY INC
元件分类: 光电耦合器
英文描述: 1 CHANNEL DARLINGTON OUTPUT OPTOCOUPLER
封装: SOIC-8
文件页数: 1/3页
文件大小: 53K
代理商: IL223A
5–1
FEATURES
High Current Transfer Ratio, IF=1 mA,
IL221A, 100% Minimum
IL222A, 200% Minimum
IL223A, 500% Minimum
Withstand Test Voltage, 2500 VACRMS
Electrical Specications Similar to
Standard 6 Pin Coupler
Industry Standard SOIC-8 Surface
Mountable Package
Standard Lead Spacing, .05"
Available in Tape and Reel Option
(Conforms to EIA Standard RS481A)
Compatible with Dual Wave, Vapor Phase
and IR Reow Soldering
Underwriters Lab File #E52744
(Code Letter P)
DESCRIPTION
The IL221A/IL222A/IL223A is a high current trans-
fer ratio (CTR) optocoupler with a Gallium Arsenide
infrared LED emitter and a silicon NPN photodar-
lington transistor detector.
This device has a CTR tested at an 1 mA LED cur-
rent. This low drive current permits easy interfacing
from CMOS to LSTTL or TTL.
This optocoupler is constructed in a standard
SOIC-8 foot print which makes it ideally suited for
high density applications. In addition to eliminating
through-holes requirements, this package con-
forms to standards for surface mounted devices.
Maximum Ratings
Emitter
Peak Reverse Voltage .....................................6.0 V
Continuous Forward Current .........................60 mA
Power Dissipation at 25
°C............................90 mW
Derate Linearly from 25
°C......................1.2 mW/°C
Detector
Collector-Emitter Breakdown Voltage...............30 V
Emitter-Collector Breakdown Voltage.................5 V
Collector-Base Breakdown Voltage..................70 V
Power Dissipation ......................................150 mW
Derate Linearly from 25
°C......................2.0 mW/°C
Package
Total Package Dissipation at 25
°C Ambient
(LED + Detector) ....................................240 mW
Derate Linearly from 25
°C......................3.3 mW/°C
Storage Temperature ...................–55
°C to +150°C
Operating Temperature ...............–55
°C to +100°C
Soldering Time at 260
°C ............................. 10 sec.
NE
W
Characteristics (TA=25°C)
Symbol
Min.
Typ.
Max.
Unit
Condition
Emitter
Forward Voltage
VF
1.0
1.5
V
IF=1 mA
Reverse Current
IR
0.1
100
AV
R=6.0 V
Capacitance
CO
25
pF
VR=0 V,
F=1 MHz
Detector
Breakdown Voltage
Collector-Emitter
Emitter-Collector
BVCEO
BVECO
30
5
V
IC=100 A
IE=100 A
Voltage,
Collector-Base
BVCBO
70
IC=10 A
Capacitance,
Collector-Emitter
CCE
3.4
pF
VCE=10 V
Package
DC Current Transfer
Ratio
IL221A
IL222A
IL223A
CTRDC
100
200
300
IF=1 mA,
VCE=5 V
Saturation Voltage,
Collector-Emitter
VCEsat
1V
ICE=0.5 mA,
IF=1 mA
Isolation Test
Voltage
VIO
2500
VACRMS t=1 sec.
Capacitance,
Input toOutput
CIO
0.5
pF
Resistance,
Input to Output
RIO
100
G
Dimensions in inches (mm)
1
2
3
4
Anode
Cathode
NC
8
7
6
5
NC
Base
Collector
Emitter
40
°
.240
(6.10)
.154
±.005
(3.91
±.13)
.050 (1.27)
typ.
.016 (.41)
.192
±.005
(4.88
±.13)
.004 (.10)
.008 (.20)
Lead
Coplanarity
±.0015 (.04)
max.
.015
±.002
(.38
±.05)
.008 (.20)
7
°
.058
±.005
(1.49
±.13)
.125
±.005
(3.18
±.13)
Pin One ID
.120
±.005
(3.05
±.13)
CL
.040 (1.02)
5
° max.
R.010
(.25) max.
.020
±.004
(.15
±.10)
2 plcs.
IL221A/IL222A/IL223A
PHOTODARLINGTON
SMALL OUTLINE
SURFACE MOUNT OPTOCOUPLER
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