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参数资料
| 型号： | IL352 |
| 厂商： | VISHAY INTERTECHNOLOGY INC |
| 元件分类： | 光电耦合器 |
| 英文描述： | 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER |
| 文件页数： | 1/3页 |
| 文件大小： | 390K |
| 代理商： | IL352 |
Document Number: 83624
www.vishay.com
Revision 17-August-01
2–136
Characteristics TA=25°C
Emitter
Sym.
Min.
Typ.
Max.
Units
Condition
Forward Voltage
VF
—
1.3
1.5
V
IF=10 mA
Reverse Current
IR
—
0.1
10
A
VR=6.0 V
Capacitance
CO
—25
—
pF
VR=0
f=1.0 MHz
Detector
Breakdown Voltage
Collector-Emitter
Emitter-Collector
BVCEO
BVECO
30
7.0
——
V
IC=1.0 mA
IE=100 A
Collector-Emitter
Leakage
ICEO
—
5.0
50
nA
VCE=10 V
IF=0
TA=25°C
—
500
A
VCE=30 V
IF=0
TA=85°C
Collector to Base
BVCBO 70
—
V
IC=100 A
Capacitance
Collector-Emitter
CCE
—
6.0
—
pF
VCE=0
.346 (8.79)
.326 (8.3)
.224 (5.7)
.216 (5.5)
.230 (5.84)
.224 (5.69)
.091 (2.3)
.083 (2.1)
.016
(.41)
Typ.
.050
(1.27)
Typ.
.040 (1.02)
.036 (.91)
40
°
3
°–7°
.047 (1.19)
.037 (.94)
.017 (.43)
.013 (.33)
10
°
Typ.
All 8 sides
.006
(.15)
1
2
3
4
5
6
7
8
N.C
A
K
N.C
C
B
E
Pins
6 & 7
.301 (7.65)
.281 (7.14)
Dimensions in Inches (mm)
FEATURES
Good CTR Linearity Depending on Forward
Current
Isolation Test Voltage, 3000 VRMS
High Collector-Emitter Voltage, VCEO=30 V
Low Saturation Voltage
Fast Switching Times
Field-Effect Stable by TRIOS*
DESCRIPTION
The IL352 is an optically coupled isolator that
features a high current transfer ratio, low coupling
capacitance and high isolation voltage. It has a
GaAs infrared emitting diode emitter, which is
optically coupled to a silicon planar phototransis-
tor detector. The component is housed in a thin
line package.
The coupling device is designed for signal trans-
mission between two electrically separated cir-
cuits. The potential difference between the
circuits to be coupled must not exceed the maxi-
mum permissible reference voltages.
Maximum Ratings
Emitter
Reverse Voltage ...........................................6.0 V
DC Forward Current ..................................60 mA
Total Power Dissipation ............................50 mW
Derate Linearly from 25
°C.................0.66 mW/°C
Detector
Collector-Emitter Voltage ..............................70 V
Emitter-Base Voltage ...................................7.0 V
Collector Current .......................................50 mA
Collector Current (t
≤1.0 ms)....................100 mA
Total Power Dissipation ...........................150 mW
Derate Linearly from 25
°C...................2.5 mW/°C
Package
Isolation Test Voltage (between emitter
and detector referred to climate
DIN 40046, part 2, Nov. 74)
t=1.0 sec......................................... 3000 VRMS
Isolation Resistance
VIO=500 V, TA=25°C ............................ ≥10
12
VIO=500 V, TA=100°C .......................... ≥10
11
Storage Temperature Range .....–40
°C to +150°C
Ambient Temperature Range ......–40
°C to +85°C
Junction Temperature................................. 100
°C
Soldering Temperature
(max 10 s, Dip Soldering Distance
to Seating Plane
≥1.5 mm) .....................260°C
*TRansparent IOn Shield
IL352
Phototransistor Optocoupler
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