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参数资料
| 型号： | IL4208-X007 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 光电耦合器 |
| 英文描述： | IL420, IL4208 Optocoupler, Phototriac Output, High dV/dt, Low Input Current |
| 中文描述： | Triac & SCR Output Optocouplers Phototriac Output, Low Input Current |
| 文件页数： | 2/7页 |
| 文件大小： | 158K |
| 代理商： | IL4208-X007 |
IL420, IL4208
Vishay Semiconductors
www.vishay.com
Rev. 2.1, 11-Jun-13
2
Document Number: 83629
For technical questions, contact:
optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
Notes
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1)
Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering condditions for through
hole devices (DIP).
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
INPUT
Reverse voltage
Forward current
Surge current
Power dissipation
Derate from 25 °C
OUTPUT
PART
SYMBOL
VALUE
UNIT
V
R
I
F
I
FSM
P
diss
6
V
60
2.5
100
1.33
mA
A
mW
mW/°C
Peak off-state voltage
IL420
IL4208
V
DRM
V
DRM
I
TM
I
TSM
P
diss
600
800
300
3
500
6.6
V
V
RMS on-state current
Single cycle surge current
Power dissipation
Derate from 25 °C
COUPLER
Isolation test voltage
between emitter and detector
mA
A
mW
mW/°C
t = 1 s
V
ISO
5300
V
RMS
Isolation resistance
V
IO
= 500 V, T
amb
= 25 °C
V
IO
= 500 V, T
amb
= 100 °C
R
IO
R
IO
T
stg
T
amb
10
12
10
11
°C
°C
Storage temperature range
Ambient temperature range
- 55 to + 150
- 55 to + 100
Soldering temperature
(1)
max.
10 s dip soldering
0.5 mm from case bottom
T
sld
260
°C
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
INPUT
Forward voltage
Reverse current
Input capacitance
Thermal resistance, junction to ambient
OUTPUT
Off-state current
On-state voltage
Surge (non-repetitive), on-state current
Holding current
Latching current
LED trigger current
Trigger current temperature gradient
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
I
F
= 10 mA
V
R
= 6 V
V
F
= 0 V, f = 1 MHz
V
F
I
R
C
IN
R
thja
1.16
0.1
40
750
1.35
10
V
μA
pF
°C/W
V
D
= V
DRM
, T
amb
= 100 °C
I
T
= 300 mA
f = 50 Hz
I
DRM
V
TM
I
TSM
I
H
I
L
I
FT
I
FT
/
T
j
dV/dt
cr
dV/dt
cr
dV/dt
crq
dV/dt
crq
10
1.7
100
3
3
500
500
2
14
μA
V
A
μA
μA
mA
μA/°C
V/μs
V/μs
V/μs
V/μs
65
V
T
= 2.2 V
V
D
= 5 V
1
7
Critical rate of rise off-state voltage
V
D
= 0.67 V
DRM
, T
j
= 25 °C
V
D
= 0.67 V
DRM
, T
j
= 80 °C
V
D
= 230 V
RMS
, I
D
= 300 mA
RMS
, T
J
= 25 °C
V
D
= 230 V
RMS
, I
D
= 300 mA
RMS
, T
J
= 85 °C
10 000
5000
Critical rate of rise of voltage
at current commutation
8
7
Critical rate of rise of on-state current
commutation
Thermal resistance, junction to ambient
dI/dt
crq
12
A/ms
R
thja
150
°C/W
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