参数资料
型号: IL440-6-X006
厂商: VISHAY SEMICONDUCTORS
元件分类: 光电耦合器
英文描述: 1 CHANNEL TRIAC OUTPUT OPTOCOUPLER
封装: 0.400 INCH, ROHS COMPLIANT, PLASTIC, DIP-6
文件页数: 2/6页
文件大小: 83K
代理商: IL440-6-X006
www.vishay.com
For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 83631
408
Rev. 1.8, 10-Dec-08
IL440
Vishay Semiconductors
Optocoupler, Phototriac
Output, Low Input Current
Notes
(1) Tamb = 25 °C, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device.
Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this
document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability.
(2) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
Notes
(1) Tamb = 25 °C, unless otherwise specified. Minimum and maximum values are testing requirements. Typical values are characteristics of the
device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements.
(2) Off-state output terminal voltage (see table 1.)
ABSOLUTE MAXIMUM RATINGS (1)
PARAMETER
TEST CONDITION
PART
SYMBOL
VALUE
UNIT
INPUT
Reverse voltage
VR
5V
Forward current
IF
60
mA
Surge current
P.W. < 10 s
IFSM
3A
Power dissipation
Pdiss
100
mW
Junction temperature
Tj
100
°C
OUTPUT
Peak off-state voltage
IL440-4
VDRM
400
V
IL440-5
VDRM
400
V
IL440-6
VDRM
400
V
On-state RMS current
ID(RMS)
100
mA
Peak surge current
tp ≤ 10 ms
IFSM
1.2
A
Peak on-state current
tp/T = 0.01 ≤ 100 s
IDRM
2A
Power dissipation
Pdiss
300
mW
Junction temperature
Tj
125
°C
COUPLER
Isolation voltage
t = 1.0 s
VISO
5300
VRMS
Creepage distance
≥ 7mm
Clearance distance
≥ 7mm
Isolation resistance
VIO = 500 V, Tamb = 25 °C
RIO
≥ 1012
Ω
VIO = 500 V, Tamb = 100 °C
RIO
≥ 1011
Ω
Total power dissipation
Ptot
330
mW
Storage temperature range
Tstg
- 55 to + 125
°C
Ambient temperature
Tamb
- 40 to + 100
°C
Junction temperature
Tj
100
°C
Lead soldering temperature (2)
2 mm from case, t < 10 s
Tsld
260
°C
ELECTRICAL CHARACTERISTICS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage
IF = 50 mA
VF
1.25
V
Reverse voltage
IR = 10 μAVR
5V
Junction capacitance
VR = 0 V, f = 1 MHz
Cj
50
pF
OUTPUT (2)
Peak on-state voltage
ITM = 100 mA, IFT = 30 mA
VTM
1.5
3
V
Critical rate of rise of off-state voltage
IF = 0, VD = 0.67 VDRM
dV/dtcr
50
V/s
Critical rate of rise of on-state current
commutation
IF = 30 mA, VD = 60 VRMS
dV/dtcrq
0.13
0.25
V/s
COUPLER
Holding current
IF ≥ 10 mA, VS ≥ 3 V
IH
1mA
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