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参数资料
| 型号： | IL66B |
| 厂商： | SIEMENS A G |
| 元件分类： | 光电耦合器 |
| 英文描述： | PHOTODARLINGTON OPTOCOUPLER |
| 中文描述： | 1 CHANNEL DARLINGTON OUTPUT OPTOCOUPLER |
| 封装： | PLASTIC, DIP-6 |
| 文件页数： | 1/2页 |
| 文件大小： | 37K |
| 代理商： | IL66B |
5–1
FEATURES
Internal RBE for High Stability
High Current Transfer Ratio
at
I
F
=2 mA, V
CE
IL66B-1, 200% min.
IL66B-2, 750% min.
Withstand Test Voltage, 5300 VAC
RMS
No Base Connection
High Isolation Resistance
Standard Plastic DIP Package
Underwriters Lab Approval #E52744
VDE 0884 Available with Option 1
DESCRIPTION
=5 V
The IL66B is an optically coupled isolator employ-
ing a Gallium Arsenide infrared emitter and a silicon
photodarlington detector. Switching can be accom-
plished while maintaining a high degree of isolation
between driving and load circuits. They can be
used to replace reed and mercury relays with
advantages of long life, high speed switching and
elimination of magnetic fields.
Maximum Ratings
(at 25
°
Emitter
Peak Reverse Voltage ........................................6 V
Continuous Forward Current.........................60 mA
Power Dissipation at 25
°
C..........................100 mW
Derate Linearly from 55
°
C ....................1.33 mW/
Detector
Collector-Emitter Breakdown Voltage.............. 60 V
Emitter-Collector Breakdown Voltage................ 5 V
Power Dissipation at 25
°
C Ambient...........200 mW
Derate Linearly from 25
°
C ......................2.6 mW/
Package
Isolation Test Voltage (t=1 sec.)........5300 VAC
RMS
Isolation Resistance
V
IO
=500 V, T
A
=25
°
C ...............................
V
IO
=500 V, T
A
=100
°
C .............................
Total Dissipation at 25
°
C ............................250 mW
Derate Linearly from 25
°
C ......................3.3 mW/
Creepage Path........................................7 min mm
Clearance Path........................................7 min mm
Storage Temperature....................–55
Operating Temperature................–55
Lead Soldering Time at 260
C)
°
C
°
C
≥
10
12
≥
10
11
°
C
°
C to +150
°
C to +100
°
C
°
C
°
C ....................10 sec.
V
D E
Electrical Characteristics
(T
A
=25
°
C)
Symbol
Min.
Typ.
Max.
Unit
Condition
Emitter
Forward Voltage
V
F
1.25
1.5
V
I
F
=10 mA
Reverse Current
I
R
0.01
100
μ
A
V
R
=3.0 V
Capacitance
C
O
25
pF
V
R
=0 V
Detector
Breakdown Voltage
Collector-Emitter
BV
CEO
60
V
I
C
=100
I
F
=0
μ
A,
Leakage Current
Collector-Emitter
I
CEO
1.0
100
nA
V
CE
=50 V,
I
F
Package
Current Transfer Ratio
IL66B-1
IL66B-2
CTR
200
750
1000
%
%
I
F
=2 mA,
V
C
E=5 V
Saturation Voltage
Collector-Emitter
V
CEsat
1.0
V
I
C
=10 mA,
I
F
=10 mA
Turn-On,Turn-Off
Time
t
on
,t
off
200
μ
s
V
CC
=10 V
I
F
R
L
=100
Dimensions in inches (mm)
.010 (.25) typ.
.114 (2.90)
.130 (3.30)
.130 (3.30)
.138 (3.50)
.031 (0.80)
min.
.300 (7.62)
typ.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
.039
(1.00)
min.
.018 (0.45)
.022 (0.55)
.248 (6.30)
.256 (6.50)
.335 (8.50)
.343 (8.70)
pin one
ID.
6
5
4
1
2
3
18
°
typ.
.300 (7.62)
.347 (8.82)
4
°
typ.
1
2
3
6
5
4
Anode
Cathode
NC
NC
Collector
Emitter
IL66B
PHOTODARLINGTON
OPTOCOUPLER
This document was created with FrameMaker 4.0.4
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IL66B_05 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Optocoupler, Photodarlington Output, with Internal RBE |
| IL66B-1 | 功能描述:晶体管输出光电耦合器 Photodarlington Out Single CTR > 200% RoHS:否 制造商:Vishay Semiconductors 输入类型:DC 最大集电极/发射极电压:70 V 最大集电极/发射极饱和电压:0.4 V 绝缘电压:5300 Vrms 电流传递比:100 % to 200 % 最大正向二极管电压:1.65 V 最大输入二极管电流:60 mA 最大集电极电流:100 mA 最大功率耗散:100 mW 最大工作温度:+ 110 C 最小工作温度:- 55 C 封装 / 箱体:DIP-4 封装:Bulk |
| IL66B-1X006 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Optocoupler, Photodarlington Output, With Internal RBE |
| IL66B-1X016 | 功能描述:晶体管输出光电耦合器 Photodarlington Out Single CTR > 200% RoHS:否 制造商:Vishay Semiconductors 输入类型:DC 最大集电极/发射极电压:70 V 最大集电极/发射极饱和电压:0.4 V 绝缘电压:5300 Vrms 电流传递比:100 % to 200 % 最大正向二极管电压:1.65 V 最大输入二极管电流:60 mA 最大集电极电流:100 mA 最大功率耗散:100 mW 最大工作温度:+ 110 C 最小工作温度:- 55 C 封装 / 箱体:DIP-4 封装:Bulk |
| IL66B-2 | 功能描述:晶体管输出光电耦合器 Photodarlington Out Single CTR > 750% RoHS:否 制造商:Vishay Semiconductors 输入类型:DC 最大集电极/发射极电压:70 V 最大集电极/发射极饱和电压:0.4 V 绝缘电压:5300 Vrms 电流传递比:100 % to 200 % 最大正向二极管电压:1.65 V 最大输入二极管电流:60 mA 最大集电极电流:100 mA 最大功率耗散:100 mW 最大工作温度:+ 110 C 最小工作温度:- 55 C 封装 / 箱体:DIP-4 封装:Bulk |
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