- 您现在的位置：买卖IC网 > PDF目录61100 > ILD1-X019 (VISHAY SEMICONDUCTORS) 2 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER PDF资料下载
参数资料
| 型号： | ILD1-X019 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 光电耦合器 |
| 英文描述： | 2 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER |
| 封装： | ROHS COMPLIANT, SMD, 8 PIN |
| 文件页数： | 3/10页 |
| 文件大小： | 156K |
| 代理商： | ILD1-X019 |
www.vishay.com
For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 83646
448
Rev. 1.6, 10-Dec-08
ILD1, ILD2, ILD5, ILQ1, ILQ2, ILQ5
Vishay Semiconductors
Optocoupler, Phototransistor
Output (Dual, Quad Channel)
Notes
(1) Tamb = 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
(2) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for throught
hole devices (DIP).
ABSOLUTE MAXIMUM RATINGS (1)
PARAMETER
TEST CONDITION
PART
SYMBOL
VALUE
UNIT
INPUT
Reverse voltage
VR
6V
Forward current
IF
60
mA
Surge current
IFSM
2.5
A
Power dissipation
Pdiss
100
mW
Derate linearly from 25 °C
1.3
mW/°C
OUTPUT
Collector emitter reverse voltage
ILD1
VCER
50
V
ILQ1
VCER
50
V
ILD2
VCER
70
V
ILQ2
VCER
70
V
ILD5
VCER
70
V
ILQ5
VCER
70
V
Collector current
IC
50
mA
t < 1.0 ms
IC
400
mA
Power dissipation
Pdiss
200
mW
Derate lineary from 25 °C
2.6
mW/°C
COUPLER
Isolation test voltage
between emitter and detector
VISO
5300
VRMS
Creepage distance
≥ 7mm
Clearance distance
≥ 7mm
Isolation resistance
VIO = 500 V, Tamb = 25 °C
RIO
1012
Ω
VIO = 500 V, Tamb = 100 °C
RIO
1011
Ω
Package power dissipation
Ptot
250
mW
Derate linearly from 25 °C
3.3
mW/°C
Storage temperature
Tstg
- 40 to + 150
°C
Operating temperature
Tamb
- 40 to + 100
°C
Junction temperature
Tj
100
°C
Soldering temperature (2)
2 mm from case bottom
Tsld
260
°C
ELECTRICAL CHARACTERISTICS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage
IF = 60 mA
VF
1.25
1.65
V
Reverse current
VR = 6 V
IR
0.01
10
A
Capacitance
VR = 0 V, f = 1 MHz
CO
25
pF
Thermal resistance, junction to lead
TthJL
750
K/W
OUTPUT
Collector emitter capacitance
VCE = 5.0 V, f = 1 MHz
CCE
6.8
pF
Collector emitter leakage current
VVCE = 10 V
ICEO
550
nA
Saturation voltage, collector emitter
IC = 1 mA, IB = 20 A
VCESAT
0.25
0.4
V
DC forward current gain
VCE = 10 V, IB = 20 A
hFE
200
650
1800
DC forward current gain saturated
VCE = 0.4 V, IB = 20 A
hFEsat
120
400
600
相关PDF资料 |
PDF描述 |
|---|---|
| ILD5-X019 | 2 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER |
| ILQ2-X019 | 4 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER |
| ILD1207T-X001 | 2 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER |
| ILD1615-1-X001 | 2 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER |
| ILD1615-4 | 2 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ILD1-X019T | 功能描述:晶体管输出光电耦合器 Phototransistor Out Dual CTR > 20% RoHS:否 制造商:Vishay Semiconductors 输入类型:DC 最大集电极/发射极电压:70 V 最大集电极/发射极饱和电压:0.4 V 绝缘电压:5300 Vrms 电流传递比:100 % to 200 % 最大正向二极管电压:1.65 V 最大输入二极管电流:60 mA 最大集电极电流:100 mA 最大功率耗散:100 mW 最大工作温度:+ 110 C 最小工作温度:- 55 C 封装 / 箱体:DIP-4 封装:Bulk |
| ILD2 | 功能描述:晶体管输出光电耦合器 Phototransistor Out Dual CTR >100% RoHS:否 制造商:Vishay Semiconductors 输入类型:DC 最大集电极/发射极电压:70 V 最大集电极/发射极饱和电压:0.4 V 绝缘电压:5300 Vrms 电流传递比:100 % to 200 % 最大正向二极管电压:1.65 V 最大输入二极管电流:60 mA 最大集电极电流:100 mA 最大功率耗散:100 mW 最大工作温度:+ 110 C 最小工作温度:- 55 C 封装 / 箱体:DIP-4 封装:Bulk |
| ILD2 | 制造商:Vishay Semiconductors 功能描述:Optocoupler |
| ILD2/ROHS | 制造商:ISOCOM 功能描述: 制造商:Isocom Components 功能描述: |
| ILD2-004 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Optoelectronic |
发布紧急采购，3分钟左右您将得到回复。