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参数资料
| 型号： | ILD1 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 光电耦合器 |
| 英文描述： | 2 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER |
| 封装： | ROHS COMPLIANT, DIP-8 |
| 文件页数： | 14/20页 |
| 文件大小： | 346K |
| 代理商： | ILD1 |
ILD1, ILD2, ILD5, ILQ1, ILQ2, ILQ5
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 28-Jun-11
3
Document Number: 83646
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage
IF = 60 mA
VF
1.25
1.65
V
Reverse current
VR = 6 V
IR
0.01
10
μA
Capacitance
VR = 0 V, f = 1 MHz
CO
25
pF
Thermal resistance, junction to lead
TthJL
750
K/W
OUTPUT
Collector emitter capacitance
VCE = 5 V, f = 1 MHz
CCE
6.8
pF
Collector emitter leakage current
VVCE = 10 V
ICEO
550
nA
Saturation voltage, collector emitter
IC = 1 mA, IB = 20 μA
VCESAT
0.25
0.4
V
DC forward current gain
VCE = 10 V, IB = 20 μA
hFE
200
650
1800
DC forward current gain saturated
VCE = 0.4 V, IB = 20 μA
hFEsat
120
400
600
Thermal resistance, junction to lead
Rthjl
500
K/W
COUPLER
Capacitance (input to output)
VIO = 0 V, f = 1 MHz
CIO
0.8
pF
CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
IC/IF
(collector emitter
saturated)
IF =10 mA, VCE = 0.4 V
ILD1
CTRCEsat
75
%
ILQ1
CTRCEsat
75
%
ILD2
CTRCEsat
170
%
ILQ2
CTRCEsat
170
%
ILD5
CTRCEsat
100
%
ILQ5
CTRCEsat
100
%
IF =10 mA, VCE = 10 V
ILD1
CTRCE
20
80
300
%
ILQ1
CTRCE
20
80
300
%
ILD2
CTRCE
100
200
500
%
ILQ2
CTRCE
100
200
500
%
ILD5
CTRCE
50
130
400
%
ILQ5
CTRCE
50
130
400
%
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