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参数资料
| 型号： | ILD213T-1 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 光电耦合器 |
| 英文描述： | 2 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER |
| 封装： | ROHS COMPLIANT, SOIC-8 |
| 文件页数： | 2/7页 |
| 文件大小： | 126K |
| 代理商： | ILD213T-1 |
www.vishay.com
For technical questions, contact: optocoupleranswers@vishay.com
Document Number: 83647
2
Rev. 1.8, 04-Mar-11
ILD205T, ILD206T, ILD207T, ILD211T, ILD213T, ILD217T
Vishay Semiconductors Optocoupler, Phototransistor Output,
Dual Channel, SOIC-8 Package
Notes
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1) Refer to reflow profile for soldering conditions for surface mounted devices.
Note
Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
OUTPUT
Collector emitter breakdown voltage
BVCEO
70
V
Emitter collector breakdown voltage
BVECO
7V
Power dissipation per channel
Pdiss
125
mW
COUPLER
Isolation test voltage
t = 1 s
VISO
4000
VRMS
Total package dissipation ambient
(2 LEDs and 2 detectors, 2 channels)
Ptot
350
mW
Storage temperature
Tstg
- 55 to + 150
°C
Operating temperature
Tamb
- 55 to + 100
°C
Soldering time from 260 °C (1)
Tsld
10
s
ELECTRICAL CHARACTERISTCS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage
IF = 10 mA
VF
1.2
1.55
V
Reverse current
VR = 6 V
IR
0.1
100
μA
Capacitance
VR = 0 V
CO
25
pF
OUTPUT
Collector emitter breakdown voltage
IC = 10 μA
BVCEO
70
V
Emitter collector breakdown voltage
IE = 10 μA
BVECO
7V
Collector emitter leakage current
VCE = 10 V, IF = 0 A
ICEO
550
nA
Collector emitter capacitance
VCE = 0 V
CCE
10
pF
COUPLER
Collector emitter saturation voltage
IF = 10 mA, IC = 2.5 mA
VCEsat
0.4
V
Capacitance (input to output)
CIO
0.5
pF
Resistance (input to output)
RIO
100
G
CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
DC current transfer ratio
VCE = 5 V, IF = 10 mA
ILD205T
CTRDC
40
80
%
ILD206T
CTRDC
63
125
%
ILD207T
CTRDC
100
200
%
ILD211T
CTRDC
20
%
ILD213T
CTRDC
100
%
VCE = 5 V, IF = 1 mA
ILD205T
CTRDC
13
30
%
ILD206T
CTRDC
22
45
%
ILD207T
CTRDC
34
70
%
ILD217T
CTRDC
100
120
%
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
相关PDF资料 |
PDF描述 |
|---|---|
| ILD213T | 2 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER |
| ILD207T-1 | 2 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER |
| ILD205T-1 | 2 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER |
| ILD206T-1 | 2 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER |
| ILD206T | 2 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ILD213T-2041 | 制造商:Vishay Intertechnologies 功能描述: |
| ILD217 | 制造商:Siemens 功能描述: |
| ILD217T | 功能描述:晶体管输出光电耦合器 Phototransistor Out Dual CTR >100% RoHS:否 制造商:Vishay Semiconductors 输入类型:DC 最大集电极/发射极电压:70 V 最大集电极/发射极饱和电压:0.4 V 绝缘电压:5300 Vrms 电流传递比:100 % to 200 % 最大正向二极管电压:1.65 V 最大输入二极管电流:60 mA 最大集电极电流:100 mA 最大功率耗散:100 mW 最大工作温度:+ 110 C 最小工作温度:- 55 C 封装 / 箱体:DIP-4 封装:Bulk |
| ILD217T | 制造商:Vishay Semiconductors 功能描述:Optocoupler |
| ILD223 | 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:DUAL PHOTODARLINGTON SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER |
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