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参数资料
| 型号： | ILD213T-X001 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 光电耦合器 |
| 英文描述： | 2 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER |
| 封装： | ROHS COMPLIANT, SOIC-8 |
| 文件页数： | 2/8页 |
| 文件大小： | 123K |
| 代理商： | ILD213T-X001 |
www.vishay.com
For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 83647
2
Rev. 1.7, 19-Nov-07
ILD205T/206T/207T/211T/213T/217T
Vishay Semiconductors
Optocoupler, Phototransistor Output,
Dual Channel, SOIC-8 package
Notes
(1) Tamb = 25 °C, unless otherwise specified.
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum
Rating for extended periods of the time can adversely affect reliability.
(2) Refer to reflow profile for soldering conditions for surface mounted devices.
Note
Tamb = 25 °C, unless otherwise specified.
Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
ABSOLUTE MAXIMUM RATINGS (1)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
INPUT
Peak reverse voltage
VR
6V
Peak pulsed voltage
1 s, 300 pps
1
A
Continuous forward current per channel
30
mA
Power dissipation
Pdiss
50
mW
Derate linearly from 25 °C
0.66
mW/°C
OUTPUT
Collector emitter breakdown voltage
BVCEO
70
V
Emitter collector breakdown voltage
BVECO
7V
Power dissipation per channel
Pdiss
125
mW
Derate linearly from 25 °C
1.67
mW/°C
COUPLER
Isolation test voltage
t = 1 s
VISO
4000
VRMS
Total package dissipation ambient
(2 LEDs and 2 detectors, 2 channels)
Ptot
300
mW
Derate linearly from 25 °C
4mW/°C
Storage temperature
Tstg
- 55 to + 150
°C
Operating temperature
Tamb
- 55 to + 100
°C
Soldering time from 260 °C (2)
Tsld
10
s
ELECTRICAL CHARACTERISTCS
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage
IF = 10 mA
VF
1.2
1.55
V
Reverse current
VR = 6 V
IR
0.1
100
A
Capacitance
VR = 0 V
CO
25
pF
OUTPUT
Collector emitter breakdown voltage
IC = 10 A
BVCEO
70
V
Emitter collector breakdown voltage
IE = 10 A
BVECO
7V
Collector emitter leakage current
VCE = 10 V, IF = 0 A
ICEO
550
nA
Collector emitter capacitance
VCE = 0 V
CCE
10
pF
COUPLER
Collector emitter saturation voltage
IF = 10 mA, IC = 2.5 mA
VCEsat
0.4
V
Capacitance (input to output)
CIO
0.5
pF
Resistance (input to output)
RIO
100
G
Ω
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