Document Number: 83647
www.vishay.com
Revision 17-August-01
2–181
FEATURES
Two Channel Coupler
SOIC-8A Surface Mountable Package
Standard Lead Spacing of .05"
Available only on Tape and Reel Option
(Conforms to EIA Standard 481-2)
Isolation Test Voltage, 3000 VRMS
High Current Transfer Ratios
ILD205T, 40 – 80%
ILD206T, 63 –125%
ILD207T, 100 – 200%
ILD211T, 20% Minimum
ILD213T, 100% Minimum
ILD217T, 100% Minimum at 1.0 mA
High BVCEO, 70 V
Compatible with Dual Wave, Vapor Phase and
IR Reow Soldering
Underwriters Laboratory File #E52744
(Code Letter Y)
DESCRIPTION
The ILD205T/206T/207T/211T/213T/217T are opti-
cally coupled pairs with a Gallium Arsenide infrared
LED and a silicon NPN phototransistor. Signal infor-
mation, including a DC level, can be transmitted by
the device while maintaining a high degree of elec-
trical isolation between input and output. The
ILD205T/6T/7T/11T/13T/17T come in a standard
SOIC-8A small outline package for surface mount-
ing which makes it ideally suited for high density
applications with limited space. In addition to elimi-
nating through-holes requirements, this package
conforms to standards for surface mounted devices.
A specied minimum and maximum CTR allows a nar-
row tolerance in the electrical design of the adjacent cir-
cuits. The high BVCEO of 70 volts gives a higher safety
margin compared to the industry standard of 30 volts.
Maximum Ratings (Each Channel)
Emitter
Peak Reverse Voltage ..................................... 6.0 V
Peak Pulsed Current (1.0
s, 300 pps) ...........1.0 A
Continuous Forward Current per Channel ....30 mA
Power Dissipation at 25
°C............................50 mW
Derate Linearly from 25
°C....................0.66 mW/°C
Detector
Collector-Emitter Breakdown Voltage............... 70 V
Emitter-Collector Breakdown Voltage.............. 7.0 V
Power Dissipation per Channel .................. 125 mW
Derate Linearly from 25
°C....................1.67 mW/°C
Package
Total Package Dissipation at 25
°C Ambient
(2 LEDs + 2 Detectors, 2 Channels)....... 300 mW
Derate Linearly from 25
°C......................4.0 mW/°C
Storage Temperature ...................–55
°C to +150°C
Operating Temperature ...............–55
°C to +100°C
Soldering Time at 260
°C ............................. 10 sec.
ILD205T/206T/207T/211T/213T/217T
Dual Phototransistor
Small Outline Surface Mount Optocoupler
Table 1. Characteristics TA=25°C
Parameter
Min.
Typ.
Max.
Unit
Condition
Emitter
Forward Voltage
—
1.2
1.55
V
IF=10 mA
Reverse Current
—
0.1
100
A
VR=6.0 V
Capacitance
—
25
—
pF
VR=0
Detector
Breakdown Voltage
BVCEO
70
—
V
IC=10 A
BVECO
7.0
—
V
IE=10 A
ICEO
—
5.0
50
nA
VCE=10 V
IF=0
Collector-Emitter
Capacitance
—10
—
pF
VCE=0
Package
DC Current Transfer,
VCE=5.0 V
ILD205
40
—
80
%
IF=10 mA
ILD206
63
—
125
ILD207
100
—
200
ILD211
20
—
ILD213
100
—
ILD205
13
30
—
IF=1.0 mA
ILD206
22
45
—
ILD207
34
70
—
ILD217
100
120
—
Collector-Emitter Saturation
Voltage VCE(sat)
—
0.4
V
IF=10 mA
IC=2.5 mA
Capacitance, Input to Output
—
0.5
—
pF
—
Isolation Test Voltage
3000
—
VRMS
t=1.0 sec.
Resistance, Input to Output
—
100
—
G
—
Turn-on Time
—
5.0
—
s
IC=2.0 mA
RL= 100
VCC=5.0 V
Turn-off Time
—
4.0
—
s
Lead
Coplanarity
±.001 (.04)
max.
C
L
.016 (.41)
.004 (.10)
.008 (.20)
.050 (1.27) typ.
.040 (1.02)
.008 (.20)
R.010
(.25) max.
.020
±.004
(.5
±.10)
2 plcs.
.230
±.002
(5.84
±.05)
.058
(1.49)
7
°
40
°
.015
±.002
(.38
±.05)
Pin 1
.154
±.002
(3.91
±.05)
.240
(6.10)
.120
±.002
(3.05
±.05)
Anode 1
Cathode 2
Anode 3
Cathode 4
8 Collector
7 Emitter
6 Collector
5 Emitter
5
° max.
.125 (3.18)
Dimensions in inches (mm)