参数资料
型号: ILD2
厂商: VISHAY INTERTECHNOLOGY INC
元件分类: 光电耦合器
英文描述: 2 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER
封装: DIP-8
文件页数: 1/4页
文件大小: 400K
代理商: ILD2
Document Number: 83646
www.vishay.com
Revision 17-August-01
2–173
Dual Channel
ILD1/2/5
Quad Channel
ILQ1/2/5
Phototransistor
Optocoupler
FEATURES
Current Transfer Ratio at IF=10 mA
ILD/Q1, 20% Min.
ILD/Q2, 100% Min.
ILD/Q5, 50% Min.
High Collector-Emitter Voltage
ILD/Q1: BVCEO=50 V
ILD/Q2, ILD/Q5: BVCEO=70 V
Field-Effect Stable by TRansparent IOn Shield
(TRIOS) Isolation Test Voltage, 5300 VRMS
Underwriters Lab File #E52744
VDE 0884 Available with Option 1
Maximum Ratings (Each Channel)
Emitter
Reverse Voltage .............................................. 6.0 V
Forward Current ............................................60 mA
Surge Current .................................................. 2.5 A
Power Dissipation........................................ 100 mW
Derate Linearly from 25
°C...................... 1.3 mW/°C
Detector
Collector-Emitter Reverse Voltage
ILD/Q1 ............................................................ 50 V
ILD/Q2, ILD/Q5................................................ 70 V
Collector Current ............................................50 mA
Collector Current (t<1.0 ms).........................400 mA
Power Dissipation........................................ 200 mW
Derate Linearly from 25
°C.......................2.6 mW/°C
Package
Isolation Test Voltage (between
emitter and detector referred to
standard climate 23
°C/50%RH,
DIN 50014)........................................... 5300 VRMS
Creepage ..................................................
≥7.0 mm
Clearance ..................................................
≥7.0 mm
Isolation Resistance
VIO=500 V, TA=25°C........................... RIO=10
12
VIO=500 V, TA=100°C......................... RIO=10
11
Package Power Dissipation......................... 250 mW
Derate Linearly from 25
°C...................... 3.3 mW/°C
Storage Temperature.................... –40
°C to +150°C
Operating Temperature ................. –40
°C to +100°C
Junction Temperature..................................... 100
°C
Soldering Temperature
(2.0 mm from case bottom) ........................ 260
°C
V
DE
DESCRIPTION
The ILD/Q1/2/5 are optically coupled isolated pairs employing GaAs infra-
red LEDs and silicon NPN phototransistor. Signal information, including a
DC level, can be transmitted by the drive while maintaining a high degree
of electrical isolation between input and output. The ILD/Q1/2/5 are espe-
cially designed for driving medium-speed logic and can be used to elimi-
nate troublesome ground loop and noise problems. Also these couplers
can be used to replace relays and transformers in many digital interface
applications such as CRT modulation. The ILD1/2/5 has two isolated chan-
nels in a single DIP package and the ILQ1/2/5 has four isolated channels
per package.
See Appnote 45, “How to Use Optocoupler Normalized Curves”.
pin one ID
.255 (6.48)
.268 (6.81)
.379 (9.63)
.390 (9.91)
.030 (0.76)
.045 (1.14)
4
° typ.
.100 (2.54) typ.
10
°
3
°–9°
.300 (7.62)
typ.
.018 (.46)
.022 (.56)
.008 (.20)
.012 (.30)
.110 (2.79)
.130 (3.30)
.150 (3.81)
.020 (.51 )
.035 (.89 )
.230(5.84)
.250(6.35)
4
3
2
1
.031 (0.79)
.050 (1.27)
5
6
78
.255 (6.48)
.265 (6.81)
.779 (19.77 )
.790 (20.07)
.030 (.76)
.045 (1.14)
4
°
.100 (2.54)typ.
10
°
typ.
3
°–9°
.018 (.46)
.022 (.56)
.008 (.20)
.012 (.30)
.110 (2.79)
.130 (3.30)
pin one ID
.130 (3.30)
.150 (3.81)
.020(.51)
.035 (.89)
8
7
6
5
4
3
2
1
9
10
11 12
13
14
15
16
.031(.79)
.300 (7.62)
typ.
.230 (5.84)
.250 (6.35)
.050 (1.27)
1
2
3
4
8
7
6
5
Emitter
Collector
Emitter
Anode
Cathode
Anode
16
15
14
13
12
11
10
9
1
2
3
4
5
6
7
8
Emitter
Collector
Emitter
Collector
Emitter
Anode
Cathode
Anode
Cathode
Anode
Dimensions in inches (mm)
Quad Channel
Dual Channel
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