
ILD1, ILD2, ILD5, ILQ1, ILQ2, ILQ5
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 28-Jun-11
2
Document Number: 83646
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
Additional options may be possible, please contact sales office.
(1) Also available in tubes; do not put T on end.
Notes
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for throught
hole devices (DIP).
VDE, UL, CSA, BSI, FIMKO
20 to 300
100 to 500
50 to 400
20 to 300
100 to 500
50 to 400
DIP-8
ILD1-X001
ILD2-X001
ILD5-X001
-
DIP-8, 400 mil, option 6
-
ILD2-X016
-
SMD-8, option 7
-
ILD2-X017
-
SMD-8, option 9
ILD1-X019T
-
DIP-16
-
ILQ2-X001
-
DIP-16, 400 mil, option 6
-
ILQ2-X016
-
SMD-16, option 7
-
ILQ2-X017T (1)
-
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
VALUE
UNIT
INPUT
Reverse voltage
VR
6V
Forward current
IF
60
mA
Surge current
IFSM
2.5
A
Power dissipation
Pdiss
100
mW
Derate linearly from 25 °C
1.3
mW/°C
OUTPUT
Collector emitter reverse voltage
ILD1
VCEO
50
V
ILQ1
VCEO
50
V
ILD2
VCEO
70
V
ILQ2
VCEO
70
V
ILD5
VCEO
70
V
ILQ5
VCEO
70
V
Collector current
IC
50
mA
t < 1 ms
IC
400
mA
Power dissipation
Pdiss
200
mW
Derate lineary from 25 °C
2.6
mW/°C
COUPLER
Isolation test voltage
between emitter and detector
VISO
5300
VRMS
Creepage distance
7mm
Clearance distance
7mm
Isolation resistance
VIO = 500 V, Tamb = 25 °C
RIO
1012
VIO = 500 V, Tamb = 100 °C
RIO
1011
Package power dissipation
Ptot
250
mW
Derate linearly from 25 °C
3.3
mW/°C
Storage temperature
Tstg
- 40 to + 150
°C
Operating temperature
Tamb
- 40 to + 100
°C
Junction temperature
Tj
100
°C
Soldering temperature (2)
2 mm from case bottom
Tsld
260
°C
AGENCY CERTIFIED/PACKAGE
DUAL CHANNEL
QUAD CHANNEL
CTR (%)