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参数资料
型号： ILD3-2
厂商： SIEMENS A G
元件分类： 光电耦合器
英文描述： 2 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER
封装： DIP-8
文件页数： 1/2页
文件大小： 50K
代理商： ILD3-2
5–1
FEATURES
Very High Current Transfer Ratio, 500% Min.
Isolation Test Voltage, 5300 VACRMS
High Isolation Resistance, 1011
Typical
Low Coupling Capacitance
Standard Plastic DIP Package
Underwriters Lab File #E52744
VDE 0884 Available with Option 1
Maximum Ratings (Each Channel)
Emitter
Peak Reverse Voltage ........................................3 V
Continuous Forward Current .........................60 mA
Power Dissipation at 25
°C.........................100 mW
Derate Linearly from 25
°C....................1.33 mW/°C
Detector
Collector-Emitter Breakdown Voltage .............30 V
Collector (Load) Current..............................125 mA
Power Dissipation at 25
°C Ambient ...........150 mW
Derate Linearly from 25
°C......................2.0 mW/°C
Package
Isolation Test Voltage (between emitter
and detector refer to standard climate
23
°C/50%RH, DIN 50014)
t=1 sec........................................... 5300 VACRMS
Creepage ............................................... 7 mm min.
Clearance............................................... 7 mm min.
Comparative Tracking Index per
DIN IEC 112/VDE303, part 1 ........................
≥175
Isolation Resistance
VIO=500V, TA=25°C ......................... RIO=10
12
VIO=500V, TA=100°C ....................... RIO=10
11
Total Dissipation at 25
°C Ambient
ILD32 .....................................................400 mW
ILQ32 .....................................................500 mW
Derate Linearly from 25
°C
ILD32 ...............................................5.33 mW/
°C
ILQ32 ...............................................6.67 mW/
°C
Storage Temperature ...................–55
°C to +150°C
Operating Temperature ...............–55
°C to +100°C
Lead Soldering Time at 260
°C .................... 10 sec.
DESCRIPTION
The ILD32/ILQ32 are optically coupled isolators
with a Gallium Arsenide infrared LED and a silicon
photodarlington sensor. Switching can be achieved
while maintaining a high degree of isolation
between driving and load circuits. These optocou-
plers can be used to replace reed and mercury
relays with advantages of long life, high speed
switching and elimination of magnetic elds.
The ILD32 has two isolated channels in a DIP pack-
age, and the ILQ32 has four channels. These
devices can be used to replace 4N32s or 4N33s in
applications calling for several single channel opto-
couplers on a board.
V
DE
Electrical Characteristics (TA=25°C)
Symbol
Min.
Typ.
Max.
Unit
Condition
Emitter
Forward Voltage
VF
1.25
1.5
V
IF=10 mA
Reverse Current
IR
0.1
100
AV
R=3.0 V
Capacitance
CO
25
pF
VR=0 V
Detector
Breakdown Voltage
Collector-Emitter
BVCEO
30
V
IC=100 A,
IF=0
Breakdown Voltage
Emitter-Collector
BVECO
510
V
IE=100 A
Collector-Emitter
Leakage Current
ICEO
1.0
100
nA
VCE=10V,
IF=0
Package
Current Transfer Ratio
CTR
500
%
IF=10 mA
Collector Emitter
Saturation Voltage
VCEsat
1.0
V
IC=2 mA,
IF=8 mA
Isolation Capacitance
CISOL
0.5
pF
Turn-On Time
ton
15
sV
CC=10 V
Turn-Off Time
toff
30
sI
F=5 mA,
RL=100
Dimensions in inches (mm)
.268 (6.81)
.255 (6.48)
.790 (20.07)
.779 (19.77 )
.045 (1.14)
.030 (.76)
4
°
Typ.
.100 (2.54)
Typ.
10
°
Typ.
3
°–9°
.305 typ.
(7.75) typ.
.022 (.56)
.018 (.46)
.012 (.30)
.008 (.20)
.135 (3.43)
.115 (2.92)
Pin One I.D.
.150 (3.81)
.130 (3.30)
.040 (1.02)
.030 (.76 )
.268 (6.81)
.255 (6.48)
3
4
6
5
.390 (9.91)
.379 (9.63)
.045 (1.14)
.030 (.76)
4
°
Typ.
.100 (2.54)
Typ.
10
°
Typ.
3
°–9°
.305 typ.
(7.75) typ.
.022 (.56)
.018 (.46)
.012 (.30)
.008 (.20)
.135 (3.43)
.115 (2.92)
1
2
8
7
Pin One I.D.
.150 (3.81)
.130 (3.30)
.040 (1.02)
.030 (.76 )
Emitter
Collector
Emitter
Collector
Emitter
Anode
Cathode
Anode
Cathode
Anode
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
8
7
6
5
Emitter
Collector
Emitter
Anode
Cathode
Anode
1
2
3
4
Dual
Channel
Quad
Channel
DUAL CHANNEL
ILD32
QUAD CHANNEL
ILQ32
PHOTODARLINGTON OPTOCOUPLER
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