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参数资料
| 型号： | ILD5-X019 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 光电耦合器 |
| 英文描述： | 2 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER |
| 封装： | ROHS COMPLIANT, SMD, 8 PIN |
| 文件页数： | 3/10页 |
| 文件大小： | 156K |
| 代理商： | ILD5-X019 |
www.vishay.com
For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 83646
448
Rev. 1.6, 10-Dec-08
ILD1, ILD2, ILD5, ILQ1, ILQ2, ILQ5
Vishay Semiconductors
Optocoupler, Phototransistor
Output (Dual, Quad Channel)
Notes
(1) Tamb = 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
(2) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for throught
hole devices (DIP).
ABSOLUTE MAXIMUM RATINGS (1)
PARAMETER
TEST CONDITION
PART
SYMBOL
VALUE
UNIT
INPUT
Reverse voltage
VR
6V
Forward current
IF
60
mA
Surge current
IFSM
2.5
A
Power dissipation
Pdiss
100
mW
Derate linearly from 25 °C
1.3
mW/°C
OUTPUT
Collector emitter reverse voltage
ILD1
VCER
50
V
ILQ1
VCER
50
V
ILD2
VCER
70
V
ILQ2
VCER
70
V
ILD5
VCER
70
V
ILQ5
VCER
70
V
Collector current
IC
50
mA
t < 1.0 ms
IC
400
mA
Power dissipation
Pdiss
200
mW
Derate lineary from 25 °C
2.6
mW/°C
COUPLER
Isolation test voltage
between emitter and detector
VISO
5300
VRMS
Creepage distance
≥ 7mm
Clearance distance
≥ 7mm
Isolation resistance
VIO = 500 V, Tamb = 25 °C
RIO
1012
Ω
VIO = 500 V, Tamb = 100 °C
RIO
1011
Ω
Package power dissipation
Ptot
250
mW
Derate linearly from 25 °C
3.3
mW/°C
Storage temperature
Tstg
- 40 to + 150
°C
Operating temperature
Tamb
- 40 to + 100
°C
Junction temperature
Tj
100
°C
Soldering temperature (2)
2 mm from case bottom
Tsld
260
°C
ELECTRICAL CHARACTERISTICS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage
IF = 60 mA
VF
1.25
1.65
V
Reverse current
VR = 6 V
IR
0.01
10
A
Capacitance
VR = 0 V, f = 1 MHz
CO
25
pF
Thermal resistance, junction to lead
TthJL
750
K/W
OUTPUT
Collector emitter capacitance
VCE = 5.0 V, f = 1 MHz
CCE
6.8
pF
Collector emitter leakage current
VVCE = 10 V
ICEO
550
nA
Saturation voltage, collector emitter
IC = 1 mA, IB = 20 A
VCESAT
0.25
0.4
V
DC forward current gain
VCE = 10 V, IB = 20 A
hFE
200
650
1800
DC forward current gain saturated
VCE = 0.4 V, IB = 20 A
hFEsat
120
400
600
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