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参数资料
| 型号： | ILD5 |
| 厂商： | SIEMENS A G |
| 元件分类： | 光电耦合器 |
| 英文描述： | RES,FILM,1.40K,.125W |
| 中文描述： | 2 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER |
| 封装： | DIP-8 |
| 文件页数： | 2/4页 |
| 文件大小： | 67K |
| 代理商： | ILD5 |
5–2
ILD/Q1/2/5
Characteristics
Package Transfer Characteristics (Each Channel)
Symbol
Min.
Typ.
Max.
Unit
Condition
Emitter
Forward Voltage
V
F
1.25
1.65
V
I
F
=60 mA
Reverse Current
I
R
0.01
10
μ
A
V
R
=6 V
Capacitance
C
0
25
pF
V
R
=0 V, f=1 MHz
Thermal Resistance, J unction to Lead
R
THJ L
750
°
C/W
Detector
Capacitance
C
CE
6.8
pF
V
CE
=5 V, f=1 MHz
Leakage Current, Collector-Emitter
I
CEO
5
50
nA
V
CE
=10 V
Saturation Voltage, Collector-Emitter
V
CESAT
0.25
0.4
I
CE
=1 mA, I
B
=20
μ
A
DC Forward Current Gain
HFE
200
650
1800
V
CE
= 10 V, I
B
=20
μ
A
Saturated DC Forward Current Gain
HFE
SAT
120
400
600
V
CE
= 0.4 V, I
B
=20
μ
A
Thermal Resistance, J unction to Lead
R
THJ L
500
°
C/W
Symbol
Min.
Typ.
Max.
Unit
Condition
ILD/Q1
Saturated Current Transfer Ratio (Collector-Emitter)
CTR
CESAT
75
%
I
F
=10 mA, V
CE
=0.4 V
Current Transfer Ratio (Collector-Emitter)
CTR
CE
20
90
300
%
I
F
=10 mA, V
CE
=10 V
ILD/Q2
Saturated Current Transfer Ratio (Collector-Emitter)
CTR
CESAT
170
%
I
F
=10 mA, V
CE
=0.4 V
Current Transfer Ratio (Collector-Emitter)
CTR
CE
100
200
500
%
I
F
=10 mA, V
CE
=10 V
ILD/Q5
Saturated Current Transfer Ratio (Collector-Emitter)
CTR
CESAT
100
%
I
F
=10 mA, V
CE
=0.4 V
Current Transfer Ratio (Collector-Emitter)
CTR
CE
50
130
400
%
I
F
=10 mA, V
CE
=10 V
Isolation and Insulation
Common Mode Rejection, Output High
C
MH
5000
V/
μ
s
V
CM
=50 V
P-P
, R
L
=1 k
, I
F
=0 mA
Common Mode Rejection, Output Low
C
ML
5000
V/
μ
s
V
CM
=50 V
P-P
, R
L
=1 k
, I
F
=10 mA
Common Mode Coupling Capacitance
C
CM
0.01
pF
Package Capacitance
C
IO
0.8
pF
V
IO
=0 V, f=1 MHz
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