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参数资料
| 型号： | ILD610-2 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 光电耦合器 |
| 英文描述： | 2 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER |
| 封装： | ROHS COMPLIANT, DIP-8 |
| 文件页数： | 2/8页 |
| 文件大小： | 102K |
| 代理商： | ILD610-2 |
www.vishay.com
For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 83651
2
Rev. 1.8, 09-Jan-08
ILD610
Vishay Semiconductors
Optocoupler, Phototransistor
Output, Dual Channel
Note
Tamb = 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied
at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for
extended periods of the time can adversely affect reliability.
Note
Tamb = 25 °C, unless otherwise specified.
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Note
(1) CTR will match within a ratio of 1.7:1
COUPLER
Isolation test voltage
t = 1.0 s
VISO
5300
VRMS
Isolation resistance
VIO = 500 V, Tamb = 25 °C
RIO
≥ 1012
Ω
VIO = 500 V, Tamb = 100 °C
RIO
≥ 1011
Ω
Storage temperature
Tstg
- 55 to + 150
°C
Operating temperature
Tamb
- 55 to + 100
°C
Junction temperature
Tj
100
°C
Lead soldering time at 260 °C
10
s
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
ELECTRICAL CHARACTERISTICS
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage
IF = 60 mA
VF
1.25
1.65
V
Reverse current
VR = 6.0 V
IR
0.01
10
A
Capacitance
VR = 0 V, f = 1.0 MHz
CO
25
pF
OUTPUT
Collector emitter breakdown
voltage
IC = 10 mA, IE = 10 A
BVCEO
70
90
V
BVCEO
6.0
7.0
V
Collector emitter dark current
VCE = 10 V
ICEO
2.0
50
nA
Collector emitter capacitance
VCE = 5.0 V, f = 1.0 MHz
CCE
7.0
pF
Collector emitter leakage current
VCE = 10 V
ILD610-1
ICEO
2.0
50
nA
ILD610-2
ICEO
2.0
50
nA
ILD610-3
ICEO
5.0
100
nA
ILD610-4
ICEO
5.0
100
nA
COUPLER
Collector emitter saturation
voltage
IF = 10 mA, IC = 2.5 mA
VCEsat
0.25
0.40
V
Coupling capacitance
CC
0.35
pF
CURRENT TRANSFER RATIO
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
CTR (1)
IF = 10 mA, VCE = 5.0 V
ILD610-1
CTR
40
80
%
ILD610-2
CTR
63
125
%
ILD610-3
CTR
100
200
%
ILD610-4
CTR
160
320
%
IF = 1.0 mA, VCE = 5.0 V
ILD610-1
CTR
13
%
ILD610-2
CTR
22
%
ILD610-3
CTR
34
%
ILD610-4
CTR
56
%
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ILD610-2-004 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Optoelectronic |
| ILD610-2-009 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Optoelectronic |
| ILD610-2X007 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Optocoupler, Phototransistor Output, Dual Channel |
| ILD610-2X007T | 功能描述:晶体管输出光电耦合器 Phototransistor Out Dual CTR > 63-125% RoHS:否 制造商:Vishay Semiconductors 输入类型:DC 最大集电极/发射极电压:70 V 最大集电极/发射极饱和电压:0.4 V 绝缘电压:5300 Vrms 电流传递比:100 % to 200 % 最大正向二极管电压:1.65 V 最大输入二极管电流:60 mA 最大集电极电流:100 mA 最大功率耗散:100 mW 最大工作温度:+ 110 C 最小工作温度:- 55 C 封装 / 箱体:DIP-4 封装:Bulk |
| ILD610-3 | 功能描述:晶体管输出光电耦合器 DIP-8 CPL DUAL 100-200% CTR - RoHS:否 制造商:Vishay Semiconductors 输入类型:DC 最大集电极/发射极电压:70 V 最大集电极/发射极饱和电压:0.4 V 绝缘电压:5300 Vrms 电流传递比:100 % to 200 % 最大正向二极管电压:1.65 V 最大输入二极管电流:60 mA 最大集电极电流:100 mA 最大功率耗散:100 mW 最大工作温度:+ 110 C 最小工作温度:- 55 C 封装 / 箱体:DIP-4 封装:Bulk |
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