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参数资料
| 型号： | ILD620GB-X009 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 光电耦合器 |
| 英文描述： | 2 CHANNEL AC INPUT-TRANSISTOR OUTPUT OPTOCOUPLER |
| 封装： | ROHS COMPLIANT, SMD, 8 PIN |
| 文件页数： | 11/18页 |
| 文件大小： | 330K |
| 代理商： | ILD620GB-X009 |
ILD620, ILD620GB, ILQ620, ILQ620GB
www.vishay.com
Vishay Semiconductors
Rev. 1.7, 09-Jun-11
2
Document Number: 83653
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
VALUE
UNIT
INPUT
Forward current
IF
± 60
mA
Surge current
IFSM
± 1.5
A
Power dissipation
Pdiss
100
mW
Derate linearly from 25 °C
1.3
mW/°C
OUTPUT
Collector emitter breakdown voltage
BVCEO
70
V
Collector current
IC
50
mA
t < 1 s
IC
100
mA
Power dissipation
Pdiss
150
mW
Derate from 25 °C
2mW/°C
COUPLER
Isolation test voltage
t = 1 s
VISO
5300
VRMS
Isolation voltage
VIORM
890
VP
Total power dissipation
Ptot
250
mW
Package dissipation
ILD620
400
mW
ILD620GB
400
mW
Derate from 25 °C
5.33
mW/°C
Package dissipation
ILQ620
500
mW
ILQ620GB
500
mW
Derate from 25 °C
6.67
mW/°C
Creepage distance
7mm
Clearance distance
7mm
Isolation resistance
VIO = 500 V, Tamb = 25 °C
RIO
1012
VIO = 500 V, Tamb = 100 °C
RIO
1011
Storage temperature
Tstg
- 55 to + 150
°C
Operating temperature
Tamb
- 55 to + 100
°C
Junction temperature
Tj
100
°C
Soldering temperature (1)
2 mm from case bottom
Tsld
260
°C
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage
IF = ± 10 mA
VF
1
1.15
1.3
V
Forward current
VR = ± 0.7 V
IF
2.5
20
μA
Capacitance
VF = 0 V, f = 1 MHz
CO
25
pF
Thermal resistance, junction to lead
RthJL
750
K/W
OUTPUT
Collector emitter capacitance
VCE = 5 V, f = 1 MHz
CCE
6.8
pF
Collector emitter leakage current
VCE = 24 V
ICEO
10
100
nA
TA = 85 °C, VCE = 24 V
ICEO
250
μA
Thermal resistance, junction to lead
RthJL
500
K/W
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ILD620GB-X009T | 功能描述:晶体管输出光电耦合器 Phototransistor Out Dual CTR > 100% RoHS:否 制造商:Vishay Semiconductors 输入类型:DC 最大集电极/发射极电压:70 V 最大集电极/发射极饱和电压:0.4 V 绝缘电压:5300 Vrms 电流传递比:100 % to 200 % 最大正向二极管电压:1.65 V 最大输入二极管电流:60 mA 最大集电极电流:100 mA 最大功率耗散:100 mW 最大工作温度:+ 110 C 最小工作温度:- 55 C 封装 / 箱体:DIP-4 封装:Bulk |
| ILD620-X007 | 功能描述:晶体管输出光电耦合器 Phototransistor Out Dual CTR > 50% RoHS:否 制造商:Vishay Semiconductors 输入类型:DC 最大集电极/发射极电压:70 V 最大集电极/发射极饱和电压:0.4 V 绝缘电压:5300 Vrms 电流传递比:100 % to 200 % 最大正向二极管电压:1.65 V 最大输入二极管电流:60 mA 最大集电极电流:100 mA 最大功率耗散:100 mW 最大工作温度:+ 110 C 最小工作温度:- 55 C 封装 / 箱体:DIP-4 封装:Bulk |
| ILD620-X007T | 功能描述:晶体管输出光电耦合器 Phototransistor Out Dual CTR > 50% RoHS:否 制造商:Vishay Semiconductors 输入类型:DC 最大集电极/发射极电压:70 V 最大集电极/发射极饱和电压:0.4 V 绝缘电压:5300 Vrms 电流传递比:100 % to 200 % 最大正向二极管电压:1.65 V 最大输入二极管电流:60 mA 最大集电极电流:100 mA 最大功率耗散:100 mW 最大工作温度:+ 110 C 最小工作温度:- 55 C 封装 / 箱体:DIP-4 封装:Bulk |
| ILD620-X009 | 功能描述:晶体管输出光电耦合器 Phototransistor Out Dual CTR > 50% RoHS:否 制造商:Vishay Semiconductors 输入类型:DC 最大集电极/发射极电压:70 V 最大集电极/发射极饱和电压:0.4 V 绝缘电压:5300 Vrms 电流传递比:100 % to 200 % 最大正向二极管电压:1.65 V 最大输入二极管电流:60 mA 最大集电极电流:100 mA 最大功率耗散:100 mW 最大工作温度:+ 110 C 最小工作温度:- 55 C 封装 / 箱体:DIP-4 封装:Bulk |
| ILD620-X009T | 功能描述:晶体管输出光电耦合器 Phototransistor Out Dual CTR > 50% RoHS:否 制造商:Vishay Semiconductors 输入类型:DC 最大集电极/发射极电压:70 V 最大集电极/发射极饱和电压:0.4 V 绝缘电压:5300 Vrms 电流传递比:100 % to 200 % 最大正向二极管电压:1.65 V 最大输入二极管电流:60 mA 最大集电极电流:100 mA 最大功率耗散:100 mW 最大工作温度:+ 110 C 最小工作温度:- 55 C 封装 / 箱体:DIP-4 封装:Bulk |
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