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参数资料
| 型号： | ILD621-X001 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 光电耦合器 |
| 英文描述： | 2 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER |
| 封装： | LEAD FREE, PLASTIC, DIP-8 |
| 文件页数： | 3/10页 |
| 文件大小： | 171K |
| 代理商： | ILD621-X001 |
www.vishay.com
For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 83654
2
Rev. 1.5, 20-Dec-07
ILD621/ILD621GB/ILQ621/ILQ621GB
Vishay Semiconductors
Optocoupler, Phototransistor Output
(Dual, Quad Channel)
Note
For additional information on the available options refer to option information.
Notes
(1) Tamb = 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
(2) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
ILD621-X007
CTR
> 50 %, dual, SMD-8 (option 7)
ILD621-X009
CTR
> 50 %, dual, SMD-8 (option 9)
ILD621GB-X007
CTR
> 100 %, dual, SMD-8 (option 7)
ILQ621-X006
CTR
> 50 %, quad, DIP-16 400 mil
ILQ621-X007
CTR
> 50 %, quad, SMD-16 (option 7)
ILQ621-X009
CTR
> 50 %, quad, SMD-16 (option 9)
ILQ621GB-X006
CTR
> 100 %, quad, DIP-16 400 mil
ILQ621GB-X007
CTR
> 100 %, quad, SMD-16 (option 7)
ILQ621GB-X009
CTR
> 100 %, quad, SMD-16 (option 9)
ORDER INFORMATION
PART
REMARKS
ABSOLUTE MAXIMUM RATINGS (1)
PARAMETER
TEST CONDITION
PART
SYMBOL
VALUE
UNIT
INPUT
Reverse voltage
VR
6.0
V
Forward current
IF
60
mA
Surge current
IFSM
1.5
A
Power dissipation
Pdiss
100
mW
Derate from 25 °C
1.33
mW/°C
OUTPUT
Collector emitter reverse voltage
VECO
70
V
Collector current
IC
50
mA
t < 1.0 ms
IC
100
mA
Power dissipation
Pdiss
150
mW
Derate from 25 °C
- 2.0
mW/°C
COUPLER
Isolation test voltage
t = 1.0 s
VISO
5300
VRMS
Package dissipation
ILD621
400
mW
ILD621GB
400
mW
Derate from 25 °C
5.33
mW/°C
Package dissipation
ILQ621
500
mW
ILQ621GB
500
mW
Derate from 25 °C
6.67
mW/°C
Creepage distance
≥ 7.0
mm
Clearance distance
≥ 7.0
mm
Isolation resistance
VIO = 500 V, Tamb = 25 °C
RIO
≥ 1012
Ω
VIO = 500 V, Tamb = 100 °C
RIO
≥ 1011
Ω
Storage temperature
Tstg
- 55 to + 150
°C
Operating temperature
Tamb
- 55 to + 100
°C
Junction temperature
Tj
100
°C
Soldering temperature (2)
2.0 mm from case bottom
Tsld
260
°C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ILD621-X006 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Optocoupler, Phototransistor Output (Dual, Quad Channel) |
| ILD621-X007 | 功能描述:晶体管输出光电耦合器 Phototransistor Out Dual CTR > 50% RoHS:否 制造商:Vishay Semiconductors 输入类型:DC 最大集电极/发射极电压:70 V 最大集电极/发射极饱和电压:0.4 V 绝缘电压:5300 Vrms 电流传递比:100 % to 200 % 最大正向二极管电压:1.65 V 最大输入二极管电流:60 mA 最大集电极电流:100 mA 最大功率耗散:100 mW 最大工作温度:+ 110 C 最小工作温度:- 55 C 封装 / 箱体:DIP-4 封装:Bulk |
| ILD621-X007T | 功能描述:晶体管输出光电耦合器 Phototransistor Out Dual CTR > 50% RoHS:否 制造商:Vishay Semiconductors 输入类型:DC 最大集电极/发射极电压:70 V 最大集电极/发射极饱和电压:0.4 V 绝缘电压:5300 Vrms 电流传递比:100 % to 200 % 最大正向二极管电压:1.65 V 最大输入二极管电流:60 mA 最大集电极电流:100 mA 最大功率耗散:100 mW 最大工作温度:+ 110 C 最小工作温度:- 55 C 封装 / 箱体:DIP-4 封装:Bulk |
| ILD621-X009 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Optocoupler, Phototransistor Output |
| ILD621-X009T | 功能描述:晶体管输出光电耦合器 Phototransistor Out Dual CTR > 50% RoHS:否 制造商:Vishay Semiconductors 输入类型:DC 最大集电极/发射极电压:70 V 最大集电极/发射极饱和电压:0.4 V 绝缘电压:5300 Vrms 电流传递比:100 % to 200 % 最大正向二极管电压:1.65 V 最大输入二极管电流:60 mA 最大集电极电流:100 mA 最大功率耗散:100 mW 最大工作温度:+ 110 C 最小工作温度:- 55 C 封装 / 箱体:DIP-4 封装:Bulk |
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