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参数资料
| 型号： | ILD74-X007 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 光电耦合器 |
| 英文描述： | 2 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER |
| 封装： | ROHS COMPLIANT, SMD, 8 PIN |
| 文件页数： | 2/9页 |
| 文件大小： | 168K |
| 代理商： | ILD74-X007 |
www.vishay.com
For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 83640
2
Rev. 1.6, 09-Jan-08
IL74/ILD74/ILQ74
Vishay Semiconductors
Optocoupler, Phototransistor Output
(Single, Dual, Quad Channel)
Note
Tamb = 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied
at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for
extended periods of the time can adversely affect reliability.
Note
Tamb = 25 °C, unless otherwise specified.
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
PART
SYMBOL
VALUE
UNIT
INPUT
Peak reverse voltage
VR
3.0
V
Forward continuous current
IF
60
mA
Power dissipation
Pdiss
100
mW
Derate linearly from 55 %
1.33
mW/°C
OUTPUT
Collector emitter breakdown voltage
BVCEO
20
V
Emitter collector breakdown voltage
BVECO
5.0
V
Collector base breakdown voltage
BVCBO
70
V
Power dissipation
Pdiss
150
mW
Derate linearly from 25 °C
2.0
mW/°C
COUPLER
Isolation test voltage
t = 1.0 s
VISO
5300
VRMS
Isolation resistance
VIO = 500 V, Tamb = 25 °C
RIO
≥ 1012
Ω
VIO = 500 V, Tamb = 100 °C
RIO
≥ 1011
Ω
Total package dissipation
IL74
Ptot
200
mW
ILD74
Ptot
400
mW
ILQ74
Ptot
500
mW
Derate linearly from 25 °C
IL74
2.7
mW/°C
ILD74
5.33
mW/°C
ILQ74
6.67
mW/°C
Creepage distance
≥ 7.0
mm
Clearance distance
≥ 7.0
mm
Storage temperature
Tstg
- 55 to + 150
°C
Operating temperature
Tamb
- 55 to + 100
°C
Lead soldering time at 260 °C
10
s
ELECTRICAL CHARACTERISTICS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage
IF = 20 mA
VF
1.3
1.5
V
Reverse current
VR = 3.0 V
IR
0.1
100
A
Capacitance
VR = 0 V
CO
25
pF
OUTPUT
Collector emitter breakdown voltage
IC = 1.0 mA
BVCEO
20
50
V
Collector emitter leakage current
VCE = 5.0 V, IF = 0 A
ICEO
5.0
500
nA
Capacitance collector emitter
VCE = 0 V, f = 1.0 Hz
CCE
10
pF
COUPLER
Saturation voltage, collector emitter
IC = 2.0 mA, IF = 16 mA
VCEsat
0.3
0.5
V
Resistance (input to output)
RIO
100
G
Ω
Capacitance (input to output)
CIO
0.5
pF
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| ILD74-X009 | 功能描述:晶体管输出光电耦合器 Phototransistor Out Dual CTR > 12.5% RoHS:否 制造商:Vishay Semiconductors 输入类型:DC 最大集电极/发射极电压:70 V 最大集电极/发射极饱和电压:0.4 V 绝缘电压:5300 Vrms 电流传递比:100 % to 200 % 最大正向二极管电压:1.65 V 最大输入二极管电流:60 mA 最大集电极电流:100 mA 最大功率耗散:100 mW 最大工作温度:+ 110 C 最小工作温度:- 55 C 封装 / 箱体:DIP-4 封装:Bulk |
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| ILD74-X016 | 功能描述:晶体管输出光电耦合器 Phototransistor Out Dual CTR > 12.5% RoHS:否 制造商:Vishay Semiconductors 输入类型:DC 最大集电极/发射极电压:70 V 最大集电极/发射极饱和电压:0.4 V 绝缘电压:5300 Vrms 电流传递比:100 % to 200 % 最大正向二极管电压:1.65 V 最大输入二极管电流:60 mA 最大集电极电流:100 mA 最大功率耗散:100 mW 最大工作温度:+ 110 C 最小工作温度:- 55 C 封装 / 箱体:DIP-4 封装:Bulk |
| ILD74-X017T | 功能描述:晶体管输出光电耦合器 Phototransistor Out Dual CTR > 12.5% RoHS:否 制造商:Vishay Semiconductors 输入类型:DC 最大集电极/发射极电压:70 V 最大集电极/发射极饱和电压:0.4 V 绝缘电压:5300 Vrms 电流传递比:100 % to 200 % 最大正向二极管电压:1.65 V 最大输入二极管电流:60 mA 最大集电极电流:100 mA 最大功率耗散:100 mW 最大工作温度:+ 110 C 最小工作温度:- 55 C 封装 / 箱体:DIP-4 封装:Bulk |
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