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参数资料
| 型号： | ILH200 |
| 厂商： | SIEMENS A G |
| 元件分类： | 光电耦合器 |
| 英文描述： | HERMETIC PHOTOTRANSISTOR DUAL CHANNEL OPTOCOUPLER |
| 中文描述： | 2 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER |
| 封装： | HERMETIC SEALED, DIP-8 |
| 文件页数： | 1/4页 |
| 文件大小： | 76K |
| 代理商： | ILH200 |
5–1
FEATURES
Operating Temperature Range, –55
Current Transfer Ratio Guaranteed from
–55
°
C to +100
°
C Ambient Temperature Range
High Current Transfer Ratio at Low Input Current
Isolation Test Voltage, 3000 VDC
Two Isolated Channels per Package
Standard 8 Pin DIP Package
DESCRIPTION
°
C to +125
°
C
The ILH200 is designed especially for hi-rel applica-
tions requiring optical isolation with high current trans-
fer ratio and low saturation V
optocoupler consists of a light emitting diode and a
NPN silicon phototransistor mounted and coupled in
an 8 pin hermetically sealed DIP package. The low
input current makes the ILH200 well suited for direct
CMOS to LSTTL/TTL interfaces.
CE
. Each channel of the
Maximum Ratings
Emitter (per channel)
Reverse Voltage ................................................................................6.0 V
Forward Current..............................................................................60 mA
Peak Forward Current
......................................................................1 A
Power Dissipation...........................................................................75 mW
Derate Linearly from 25
°
C ......................................................0.75 mW/
Detector (per channel)
Collector-Emitter Voltage ...................................................................70 V
Emitter-Collector Voltage .....................................................................7 V
Continuous Collector Current..........................................................50 mA
Power Dissipation.........................................................................100 mW
Derate Linearly from 25
°
C ........................................................1.0 mW/
Package
Input to Output Isolation Test Voltage
Storage Temperature Range..........................................–65
Operating Temperature Range.......................................–55
J unction Temperature......................................................................150
Soldering Time at 240
°
C, 1.6 mm from case ................................10 sec.
Power Dissipation.........................................................................350 mW
Derate Linearly from 25
°
C ........................................................3.5 mW/
(1)
°
C
°
C
(2 )
...................................3000 VDC
°
°
C to +150
C to +125
°
°
°
C
C
C
°
C
Notes:
1. Values applies for P
2. Measured between pins 1,2,3 and 4 shorted together and pins 5,6,7 and 8
shorted together. T
A
=25
°
C and duration=1 second, RH=45%.
W
≤
1 ms, PRR
≤
300 pps.
Dimensions in inches (mm)
.390
±
.005
(9.91
±
.13)
1 2 3 4
8 7 6 5
Siemens
XXX XXXX
XXYY
.320
(8.13)
max.
.125
(3.18)
min.
.018
±
.002
(.46
±
.05)
.100
±
.010
(2.54
±
.25)
.020
(.51)
min.
.150
(3.81)
max.
.010
±
.002
(.25
±
.05)
.300
(7.62)
typ.
Anode
Cathode
Emitter
Collector
8
7
4
3
Cathode
Anode
2
1
Collector
Emitter
6
5
ILH200
HERMETIC PHOTOTRANSISTOR
DUAL CHANNEL OPTOCOUPLER
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