参数资料
型号: ILQ2-X016
厂商: VISHAY SEMICONDUCTORS
元件分类: 光电耦合器
英文描述: 4 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER
封装: 0.400 INCH, ROHS COMPLIANT, DIP-16
文件页数: 12/20页
文件大小: 346K
代理商: ILQ2-X016
ILD1, ILD2, ILD5, ILQ1, ILQ2, ILQ5
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 28-Jun-11
2
Document Number: 83646
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
Additional options may be possible, please contact sales office.
(1) Also available in tubes; do not put T on end.
Notes
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for throught
hole devices (DIP).
VDE, UL, CSA, BSI, FIMKO
20 to 300
100 to 500
50 to 400
20 to 300
100 to 500
50 to 400
DIP-8
ILD1-X001
ILD2-X001
ILD5-X001
-
DIP-8, 400 mil, option 6
-
ILD2-X016
-
SMD-8, option 7
-
ILD2-X017
-
SMD-8, option 9
ILD1-X019T
-
DIP-16
-
ILQ2-X001
-
DIP-16, 400 mil, option 6
-
ILQ2-X016
-
SMD-16, option 7
-
ILQ2-X017T (1)
-
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
VALUE
UNIT
INPUT
Reverse voltage
VR
6V
Forward current
IF
60
mA
Surge current
IFSM
2.5
A
Power dissipation
Pdiss
100
mW
Derate linearly from 25 °C
1.3
mW/°C
OUTPUT
Collector emitter reverse voltage
ILD1
VCEO
50
V
ILQ1
VCEO
50
V
ILD2
VCEO
70
V
ILQ2
VCEO
70
V
ILD5
VCEO
70
V
ILQ5
VCEO
70
V
Collector current
IC
50
mA
t < 1 ms
IC
400
mA
Power dissipation
Pdiss
200
mW
Derate lineary from 25 °C
2.6
mW/°C
COUPLER
Isolation test voltage
between emitter and detector
VISO
5300
VRMS
Creepage distance
7mm
Clearance distance
7mm
Isolation resistance
VIO = 500 V, Tamb = 25 °C
RIO
1012
VIO = 500 V, Tamb = 100 °C
RIO
1011
Package power dissipation
Ptot
250
mW
Derate linearly from 25 °C
3.3
mW/°C
Storage temperature
Tstg
- 40 to + 150
°C
Operating temperature
Tamb
- 40 to + 100
°C
Junction temperature
Tj
100
°C
Soldering temperature (2)
2 mm from case bottom
Tsld
260
°C
AGENCY CERTIFIED/PACKAGE
DUAL CHANNEL
QUAD CHANNEL
CTR (%)
相关PDF资料
PDF描述
ILD2-X009T 2 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER
IMIC4814EYB PROC SPECIFIC CLOCK GENERATOR, PDSO48
IMIC9714CYB PROC SPECIFIC CLOCK GENERATOR, PDSO28
IMIC9714JY PROC SPECIFIC CLOCK GENERATOR, PDSO28
IMIC9716-ITB PROC SPECIFIC CLOCK GENERATOR, PDSO28
相关代理商/技术参数
参数描述
ILQ2-X017 功能描述:晶体管输出光电耦合器 Phototransistor Out Quad CTR > 100% RoHS:否 制造商:Vishay Semiconductors 输入类型:DC 最大集电极/发射极电压:70 V 最大集电极/发射极饱和电压:0.4 V 绝缘电压:5300 Vrms 电流传递比:100 % to 200 % 最大正向二极管电压:1.65 V 最大输入二极管电流:60 mA 最大集电极电流:100 mA 最大功率耗散:100 mW 最大工作温度:+ 110 C 最小工作温度:- 55 C 封装 / 箱体:DIP-4 封装:Bulk
ILQ2-X017T 功能描述:晶体管输出光电耦合器 Phototransistor Out Quad CTR > 100% RoHS:否 制造商:Vishay Semiconductors 输入类型:DC 最大集电极/发射极电压:70 V 最大集电极/发射极饱和电压:0.4 V 绝缘电压:5300 Vrms 电流传递比:100 % to 200 % 最大正向二极管电压:1.65 V 最大输入二极管电流:60 mA 最大集电极电流:100 mA 最大功率耗散:100 mW 最大工作温度:+ 110 C 最小工作温度:- 55 C 封装 / 箱体:DIP-4 封装:Bulk
ILQ3 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Optocoupler, Phototransistor Output (Dual, Quad Channel)
ILQ30 功能描述:晶体管输出光电耦合器 Photodarlington Out Quad CTR >100% RoHS:否 制造商:Vishay Semiconductors 输入类型:DC 最大集电极/发射极电压:70 V 最大集电极/发射极饱和电压:0.4 V 绝缘电压:5300 Vrms 电流传递比:100 % to 200 % 最大正向二极管电压:1.65 V 最大输入二极管电流:60 mA 最大集电极电流:100 mA 最大功率耗散:100 mW 最大工作温度:+ 110 C 最小工作温度:- 55 C 封装 / 箱体:DIP-4 封装:Bulk
ILQ30 制造商:Vishay Semiconductors 功能描述:OPTOCOUPLER